Inventor · disambiguated record
Liang-Yin Chen
Also filed as: CHEN LIANG · CHEN LIANG-YIN
114 granted patents·63 pending applications·431 citations·filing 2014–2025
99Inventor score
Top patents by PatentIndex Score
177 records- 0199US9564489B2Multiple gate field-effect transistors having oxygen-scavenged gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·297 cites·20 claims
- 0297US11978677B2Wafer positioning method and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·3 cites·20 claims
- 0397US11848361B2Sacrificial layer for semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
- 0497US11594618B2FinFET devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·3 cites·20 claims
- 0597US11508831B2Gate spacer structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·4 cites·20 claims
- 0697US11456383B2Semiconductor device having a contact plug with an air gap spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·7 cites·20 claims
- 0797US11289417B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·14 claims
- 0897US10347762B1Field effect transistor contact with reduced contact resistance using implantation processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 9, 2019·20 cites·20 claims
- 0997US9824937B1Flowable CVD quality control in STI loopTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·15 cites·20 claims
- 1096US11257952B2Source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
- 1196US10658510B2Source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 1295US11257911B2Sacrificial layer for semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
- 1394US10868142B2Gate spacer structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·7 cites·20 claims
- 1494US10717182B2Angle grinderNANJING CHERVON IND CO LTD·Filed 2017·Granted Jul 21, 2020·6 cites·13 claims
- 1593US10763168B2Semiconductor structure with doped via plug and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·10 cites·20 claims
- 1691US11901455B2Method of manufacturing a FinFET by implanting a dielectric with a dopantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
- 1791US10522656B2Forming epitaxial structures in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·6 cites·20 claims
- 1890US11855146B2Melt anneal source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1990US11145751B2Semiconductor structure with doped contact plug and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 12, 2021·6 cites·20 claims
- 2089US11776810B2Method of forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·1 cites·20 claims
- 2188US11488857B2Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 2287US12293924B2Ion exposure method and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 6, 2025·0 cites·20 claims
- 2387US2025344425A1Source/Drain Structure of Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2486US10643892B2Metal loss prevention using implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 5, 2020·3 cites·20 claims
- 2585US12368098B2Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 2685US12205994B2Sacrificial layer for semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 2785US12015055B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 18, 2024·0 cites·20 claims
- 2885US11646377B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·1 cites·20 claims
- 2985US11211289B2Metal loss prevention using implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·2 cites·20 claims
- 3085US10727226B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 28, 2020·3 cites·20 claims
- 3185US2025309103A1Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3284US11955553B2Source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 3384US11257906B2High surface dopant concentration formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·1 cites·20 claims
- 3484US11227918B2Melt anneal source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·2 cites·21 claims
- 3583US12315753B2Wafer positioning method and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 3683US12068195B2Metal loss prevention using implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 3783US12062709B2Gate spacer structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 3883US2025299953A1Method of forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3983US2025232985A1Ion exposure method and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4083US2025324653A1METHOD OF MANUFACTURING A FinFET BY IMPLANTING A DIELECTRIC WITH A DOPANTTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4183US2024371688A1Semiconductor device with doped region dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4282US12432963B2Device having an air gap adjacent to a contact plug and covered by a doped dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 4382US11515206B2Semiconductor structure with doped via plugTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·1 cites·20 claims
- 4482US2025336719A1Semiconductor device with doped region dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4582US2025366111A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4681US12347681B2Method of forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 4781US12224327B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 4881US11742386B2Doping for semiconductor device with conductive featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·0 cites·20 claims
- 4981US9837504B2Method of modifying capping layer in semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 5, 2017·3 cites·20 claims
- 5081US2025287636A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 177 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →