Inventor · disambiguated record
Lia Krusin-Elbaum
Also filed as: KRUSIN-ELBAUM LIA
37 granted patents·3 pending applications·795 citations·filing 1992–2012
98Inventor score
Top patents by PatentIndex Score
40 records- 0197US7411818B1Programmable fuse/non-volatile memory structures using externally heated phase change materialIBM·Filed 2007·Granted Aug 12, 2008·50 cites·5 claims
- 0297US7394089B2Heat-shielded low power PCM-based reprogrammable EFUSE deviceIBM·Filed 2006·Granted Jul 1, 2008·76 cites·3 claims
- 0396US8405279B2Coupling piezoelectric material generated stresses to devices formed in integrated circuitsELMEGREEN BRUCE G·Filed 2012·Granted Mar 26, 2013·23 cites·27 claims
- 0496US7692959B2Multilayer storage class memory using externally heated phase change materialIBM·Filed 2008·Granted Apr 6, 2010·48 cites·20 claims
- 0595US7772582B2Four-terminal reconfigurable devicesIBM·Filed 2007·Granted Aug 10, 2010·28 cites·4 claims
- 0695US7221579B2Method and structure for high performance phase change memoryIBM·Filed 2005·Granted May 22, 2007·67 cites·20 claims
- 0793US8159854B2Piezo-effect transistor device and applicationsELMEGREEN BRUCE G·Filed 2009·Granted Apr 17, 2012·27 cites·32 claims
- 0893US5396455AMagnetic non-volatile random access memoryIBM·Filed 1993·Granted Mar 7, 1995·107 cites·11 claims
- 0992US7633079B2Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change materialIBM·Filed 2007·Granted Dec 15, 2009·26 cites·20 claims
- 1091US8247947B2Coupling piezoelectric material generated stresses to devices formed in integrated circuitsELMEGREEN BRUCE G·Filed 2009·Granted Aug 21, 2012·18 cites·22 claims
- 1191US7848135B2Piezo-driven non-volatile memory cell with hysteretic resistanceIBM·Filed 2008·Granted Dec 7, 2010·30 cites·24 claims
- 1289US7969770B2Programmable via devices in back end of line levelIBM·Filed 2007·Granted Jun 28, 2011·13 cites·19 claims
- 1389US7652279B2Three-terminal cascade switch for controlling static power consumption in integrated circuitsIBM·Filed 2008·Granted Jan 26, 2010·12 cites·7 claims
- 1487US7659534B2Programmable via devices with air gap isolationIBM·Filed 2007·Granted Feb 9, 2010·12 cites·21 claims
- 1587US6774463B1Superconductor gate semiconductor channel field effect transistorIBM·Filed 1992·Granted Aug 10, 2004·70 cites·1 claims
- 1687US5801444AMultilevel electronic structures containing copper layer and copper-semiconductor layersIBM·Filed 1996·Granted Sep 1, 1998·74 cites·14 claims
- 1786US7750335B2Phase change material structure and related methodIBM·Filed 2007·Granted Jul 6, 2010·16 cites·11 claims
- 1876US7545667B2Programmable via structure for three dimensional integration technologyIBM·Filed 2006·Granted Jun 9, 2009·6 cites·3 claims
- 1974US8053752B2Four-terminal reconfigurable devicesIBM·Filed 2011·Granted Nov 8, 2011·2 cites·7 claims
- 2073US7880157B2Four-terminal reconfigurable devicesIBM·Filed 2009·Granted Feb 1, 2011·4 cites·17 claims
- 2171US7732798B2Programmable via structure for three dimensional integration technologyIBM·Filed 2008·Granted Jun 8, 2010·4 cites·9 claims
- 2271US7491965B2Heat-shielded low power PCM-based reprogrammable eFUSE deviceIBM·Filed 2008·Granted Feb 17, 2009·6 cites·17 claims
- 2371US6579635B2Smoothing and stabilization of domain walls in perpendicularly polarized magnetic filmsIBM·Filed 2001·Granted Jun 17, 2003·12 cites·20 claims
- 2470US5543988AHall sensor with high spatial resolution in two directions concurrentlyIBM·Filed 1995·Granted Aug 6, 1996·37 cites·22 claims
- 2568US8466444B2Three-terminal cascade switch for controlling static power consumption in integrated circuitsKRUSIN-ELBAUM LIA·Filed 2012·Granted Jun 18, 2013·1 cites·6 claims
- 2668US7652278B2Programmable via structure and method of fabricating sameIBM·Filed 2006·Granted Jan 26, 2010·3 cites·20 claims
- 2763US8243507B2Programmable via devices in back end of line levelCHEN KUAN-NENG·Filed 2011·Granted Aug 14, 2012·1 cites·12 claims
- 2863US7646006B2Three-terminal cascade switch for controlling static power consumption in integrated circuitsIBM·Filed 2006·Granted Jan 12, 2010·1 cites·2 claims
- 2957US7888164B2Programmable via structure and method of fabricating sameIBM·Filed 2009·Granted Feb 15, 2011·0 cites·17 claims
- 3056US8586957B2Three-terminal cascade switch for controlling static power consumption in integrated circuitsKRUSIN-ELBAUM LIA·Filed 2009·Granted Nov 19, 2013·0 cites·2 claims
- 3156US8143609B2Three-terminal cascade switch for controlling static power consumption in integrated circuitsKRUSIN-ELBAUM LIA·Filed 2009·Granted Mar 27, 2012·0 cites·6 claims
- 3254US8213224B2High density low power nanowire phase change material memory deviceELMEGREEN BRUCE G·Filed 2009·Granted Jul 3, 2012·0 cites·20 claims
- 3353US2008285335A1Programmable fuse/non-volatile memory structures using externally heated phase change materialIBM·Filed 2008·Application pending·0 cites
- 3452US7977203B2Programmable via devices with air gap isolationIBM·Filed 2009·Granted Jul 12, 2011·0 cites·4 claims
- 3548US8987084B2High density low power nanowire phase change material memory deviceELMEGREEN BRUCE G·Filed 2012·Granted Mar 24, 2015·0 cites·11 claims
- 3646US5288456ACompound with room temperature electrical resistivity comparable to that of elemental copperIBM·Filed 1993·Granted Feb 22, 1994·12 cites·6 claims
- 3743US2006249724A1Method and structure for Peltier-controlled phase change memoryIBM·Filed 2005·Application pending·0 cites
- 3837US2009039331A1Phase change material structuresIBM·Filed 2007·Application pending·0 cites
- 3936US5912210AEnhancement of persistent currents in high TC superconductorsIBM·Filed 1997·Granted Jun 15, 1999·7 cites·22 claims
- 4030US5330592AProcess of deposition and solid state reaction for making alloyed highly conductive copper germanideIBM·Filed 1993·Granted Jul 19, 1994·2 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →