Inventor · disambiguated record
Li-Shyue Lai
Also filed as: LAI LI-SHYUE
27 granted patents·7 pending applications·540 citations·filing 2003–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG15TAIWAN SEMICONDUCTOR MFG CO LTD9LAI LI-SHYUE5IND TECH RES INST1LIN WEN C1
Top patents by PatentIndex Score
34 records- 0198US7229883B2Phase change memory device and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 12, 2007·88 cites·24 claims
- 0297US8264021B2Finfets and methods for forming the sameLAI LI-SHYUE·Filed 2010·Granted Sep 11, 2012·79 cites·15 claims
- 0395US7170775B2MRAM cell with reduced write currentTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 30, 2007·41 cites·14 claims
- 0495US7154798B2MRAM arrays and methods for writing and reading magnetic memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 26, 2006·38 cites·20 claims
- 0594US8058692B2Multiple-gate transistors with reverse T-shaped finsLAI LI-SHYUE·Filed 2008·Granted Nov 15, 2011·32 cites·19 claims
- 0693US12176286B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·2 cites·20 claims
- 0793US7436698B2MRAM arrays and methods for writing and reading magnetic memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 14, 2008·41 cites·25 claims
- 0892US7203129B2Segmented MRAM memory arrayTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 10, 2007·113 cites·12 claims
- 0986US8022382B2Phase change memory devices with reduced programming currentTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 20, 2011·19 cites·19 claims
- 1083US2025329583A1Cavity in metal interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1180US10283623B2Integrated circuits with gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·2 cites·20 claims
- 1280US2025359066A1Vertical field effect transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1378US7265373B2Phase change memory device and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 4, 2007·9 cites·25 claims
- 1477US8921218B2Metal gate finFET device and method of fabricating thereofYANG YU-LIN·Filed 2012·Granted Dec 30, 2014·4 cites·18 claims
- 1577US8466505B2Multi-level flash memory cell capable of fast programmingLAI LI-SHYUE·Filed 2005·Granted Jun 18, 2013·7 cites·12 claims
- 1675US7050290B2Integrated capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 23, 2006·21 cites·21 claims
- 1775US2025070025A1Method of forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1874US8455321B2Multiple-gate transistors with reverse T-shaped finsLAI LI-SHYUE·Filed 2011·Granted Jun 4, 2013·3 cites·16 claims
- 1973US2023369107A1Cavity in metal interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2070US11984351B2Cavity in metal interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 2163US7035083B2Interdigitated capacitor and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 25, 2006·10 cites·16 claims
- 2262US6873535B1Multiple width and/or thickness write line in MRAMTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 29, 2005·8 cites·39 claims
- 2361US7099176B2Non-orthogonal write line structure in MRAMTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Aug 29, 2006·11 cites·20 claims
- 2461US7071478B2System and method for passing particles on selected areas on a waferTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 4, 2006·4 cites·29 claims
- 2559US10861958B2Integrated circuits with gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 2656US7105879B2Write line design in MRAMTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 12, 2006·7 cites·17 claims
- 2754US9461041B2Metal gate finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 4, 2016·0 cites·20 claims
- 2853US8153471B2Method for forming a reduced active area in a phase change memory structureLAI LI-SHYUE·Filed 2010·Granted Apr 10, 2012·0 cites·20 claims
- 2950US7151271B2System and method for passing high energy particles through a maskTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 19, 2006·1 cites·32 claims
- 3047US7858980B2Reduced active area in a phase change memory structureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 28, 2010·0 cites·7 claims
- 3146US8263959B2Phase change memory device and method of manufacture thereofWANG CHAO-HSIUNG·Filed 2007·Granted Sep 11, 2012·0 cites·22 claims
- 3242US2005184282A1Phase change memory cell and method of its manufactureFiled 2004·Application pending·0 cites
- 3339US2006278908A1Write line design in MRAMLIN WEN C·Filed 2006·Application pending·0 cites
- 3432US2004087097A1Method of ultra thin base fabrication for Si/SiGe hetro bipolar transisterIND TECH RES INST·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →