Inventor · disambiguated record
Liqiao Qin
Also filed as: QIN LIQIAO
4 granted patents·22 pending applications·2 citations·filing 2015–2024
57Inventor score
Top patents by PatentIndex Score
26 records- 0180US11158635B2Low leakage gate stack for a transistor device and methods of making an IC product that includes such a transistor deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 26, 2021·2 cites·20 claims
- 0260US2025379146A1Fork sheet transistors with backside dielectric pillarIBM·Filed 2024·Application pending·0 cites
- 0359US2025301726A1Deep backside power rail cutIBM·Filed 2024·Application pending·0 cites
- 0459US2025063710A1Nanosheet field-effect transistors with different drive strengthsIBM·Filed 2023·Application pending·0 cites
- 0558US12451431B2Stacked semiconductor devices with topside and backside interconnect wiringIBM·Filed 2022·Granted Oct 21, 2025·0 cites·15 claims
- 0658US2025194154A1Wrap-around dielectric liner to prevent backside contact to gate shortIBM·Filed 2023·Application pending·0 cites
- 0758US2025194198A1Semiconductor device with an etch stop layer at the middle of lineIBM·Filed 2023·Application pending·0 cites
- 0858US2025220987A1Channel depopulation using placeholder dielectiricIBM·Filed 2023·Application pending·0 cites
- 0958US2025194149A1Contact extension for additional wiring pathsIBM·Filed 2023·Application pending·0 cites
- 1058US2025185337A1Semiconductor structure with two air gaps on two sides of a top source-drain middle-of-line contact viaIBM·Filed 2023·Application pending·0 cites
- 1157US2025169160A1Dual liners for aggressive nanosheet spacing with backside contactsIBM·Filed 2023·Application pending·0 cites
- 1256US12490480B2Stacked FETS with contact placeholder structuresIBM·Filed 2022·Granted Dec 2, 2025·0 cites·19 claims
- 1354US2024395814A1Stacked hybrid tfet and mosfetIBM·Filed 2023·Application pending·0 cites
- 1454US2025006820A1Tunnel nanosheet fet formation with increased currentIBM·Filed 2023·Application pending·0 cites
- 1553US2024170538A1Semiconductor structure with strained nanosheet channelIBM·Filed 2022·Application pending·0 cites
- 1653US2024071925A1Fet substrate trimming with improved via placementIBM·Filed 2022·Application pending·0 cites
- 1753US2024128346A1Gate-all-around transistors with dual pfet and nfet channelsIBM·Filed 2022·Application pending·0 cites
- 1853US2024112984A1Method and structure of forming backside gate tie-downIBM·Filed 2022·Application pending·0 cites
- 1952US11789064B1Decoupling BTI and HCI mechanism in ring oscillatorIBM·Filed 2022·Granted Oct 17, 2023·0 cites·18 claims
- 2051US2024105554A1Transistors with via-to-backside power rail spacersIBM·Filed 2022·Application pending·0 cites
- 2151US2024079276A1Non-shared metal gate integration for scaled gate all around (gaa) transistorsIBM·Filed 2022·Application pending·0 cites
- 2251US2024096752A1Via resistance to backside power railIBM·Filed 2022·Application pending·0 cites
- 2351US2024072146A1Stacked device via to power element structureIBM·Filed 2022·Application pending·0 cites
- 2451US2024088252A1Gate all around transistors with heterogeneous channelsIBM·Filed 2022·Application pending·0 cites
- 2550US2023369218A1Interlevel via for stacked field-effect transistor deviceIBM·Filed 2022·Application pending·0 cites
- 2631US2017053794A1Automatic control of spray bar and units for chemical mechanical polishing in-situ brush cleaningGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →