Inventor · disambiguated record
Ling-Sung Wang
Also filed as: WANG LING · WANG LING-SUNG
103 granted patents·30 pending applications·800 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD69TAIWAN SEMICONDUCTOR MFG27LIN MEI-HSUAN7HUANG JIUN-JIE6WORLDWIDE SEMICONDUCTOR MFG6
Top patents by PatentIndex Score
133 records- 0198US6500728B1Shallow trench isolation (STI) module to improve contact etch process windowTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 31, 2002·257 cites·52 claims
- 0296US12021130B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0392US9246002B2Structure and method for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 26, 2016·13 cites·20 claims
- 0492US9142642B2Methods and apparatus for doped SiGe source/drain stressor depositionCHEN CHAO-HSUING·Filed 2012·Granted Sep 22, 2015·17 cites·18 claims
- 0590US11588038B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·2 cites·20 claims
- 0688US10090392B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 2, 2018·9 cites·19 claims
- 0788US2025322135A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0887US9324836B2Methods and apparatus for doped SiGe source/drain stressor depositionTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Apr 26, 2016·4 cites·20 claims
- 0987US2025359276A1Circuit Structure with Gate ConfigurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1086US6448167B1Process flow to reduce spacer undercut phenomenaTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 10, 2002·41 cites·26 claims
- 1186US6091101AMulti-level flash memory using triple wellWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1998·Granted Jul 18, 2000·57 cites·10 claims
- 1285US8533639B2Optical proximity correction for active region design layoutLIN MEI-HSUAN·Filed 2011·Granted Sep 10, 2013·7 cites·20 claims
- 1384US12423498B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 1483US12464801B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1583US12289877B2Semiconductor device including unilaterally extending gates and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 1683US10417369B2Semiconductor device, corresponding mask and method for generating layout of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·2 cites·20 claims
- 1783US10008501B2Sandwich EPI channel for device enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 26, 2018·3 cites·20 claims
- 1883US9466670B2Sandwich epi channel for device enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 11, 2016·5 cites·20 claims
- 1982US9385215B2V-shaped SiGe recess volume trim for improved device performance and layout dependenceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 5, 2016·4 cites·20 claims
- 2081US11502185B2Methods of manufacturing a gate electrode having metal layers with different average grain sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·1 cites·20 claims
- 2181US2025359130A1Semiconductor Device and Method of Manufacturing the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2280US11844205B2Semiconductor device including trimmed-gates and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 12, 2023·0 cites·20 claims
- 2380US11763061B2Method of making semiconductor device and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 2480US9735252B2V-shaped SiGe recess volume trim for improved device performance and layout dependenceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·2 cites·20 claims
- 2580US8586486B2Method for forming semiconductor deviceCHEN JEN-YI·Filed 2011·Granted Nov 19, 2013·6 cites·12 claims
- 2679US9722082B2Methods and apparatus for doped SiGe source/drain stressor depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·2 cites·20 claims
- 2779US8766256B2SiGe SRAM butted contact resistance improvementCHEN CHAO-HSUING·Filed 2012·Granted Jul 1, 2014·5 cites·12 claims
- 2878US9543399B2Device having sloped gate profile and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·3 cites·21 claims
- 2978US8940594B2Semiconductor device having v-shaped regionTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 27, 2015·4 cites·20 claims
- 3078US6143606AMethod for manufacturing split-gate flash memory cellWORLDWIDE SEMICONDUCTOR MFG·Filed 1998·Granted Nov 7, 2000·37 cites·19 claims
- 3178US2024363734A1P-Type FiNFET as a Radio-Frequency Device and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3277US12342553B2Semiconductor devices and methods for increased capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 3377US8659089B2Nitrogen passivation of source and drain recessesKO JIA-YANG·Filed 2011·Granted Feb 25, 2014·8 cites·20 claims
- 3477US8558350B2Metal-oxide-metal capacitor structureHUANG JIUN-JIE·Filed 2011·Granted Oct 15, 2013·5 cites·20 claims
- 3577US2025287617A1Semiconductor devices and methods for increased capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3676US9209304B2N/P MOS FinFET performance enhancement by specific orientation surfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 8, 2015·4 cites·18 claims
- 3775US12113120B2Gate electrode having a work-function layer including materials with different average grain sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 3875US7473986B2Positive-intrinsic-negative (PIN) diode semiconductor devices and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 6, 2009·7 cites·30 claims
- 3975US6610571B1Approach to prevent spacer undercut by low temperature nitridationTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 26, 2003·18 cites·11 claims
- 4074US6207507B1Multi-level flash memory using triple well process and method of makingTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Mar 27, 2001·31 cites·4 claims
- 4174US2025294790A1Semiconductor structure and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4273US11587937B2Method of forming semiconductor device including trimmed-gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·0 cites·20 claims
- 4373US9634122B2Device boost by quasi-FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·3 cites·20 claims
- 4473US9064841B2Metal-oxide-metal capacitor apparatus with a via-hole regionHUANG JIUN-JIE·Filed 2011·Granted Jun 23, 2015·4 cites·22 claims
- 4573US2024371919A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4673US2025349626A1Manufacturing method of semiconductor structure and semiconductor structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4772US2025081508A1Semiconductor Device and Method of Manufacturing the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4871US12504391B2System for monitoring wafer carrier and method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 4971US12336199B2Semiconductor devices and methods for increased capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 5071US2025285916A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 133 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →