Inventor · disambiguated record
Liang Yi
Also filed as: YI LIANG
27 granted patents·7 pending applications·137 citations·filing 2012–2025
95Inventor score
Files withUNITED MICROELECTRONICS CORP28GLOBALFOUNDRIES SG PTE LTD2HSIEH KUAN-HONG2HUAWEI TECH CO LTD1VERMA PURAKH RAJ1
Top patents by PatentIndex Score
34 records- 0196US10090465B2Semiconductor device having memory cell structure and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 2, 2018·23 cites·24 claims
- 0295US12040369B2Semiconductor memory device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jul 16, 2024·3 cites·12 claims
- 0395US9806255B1Resistive random access memory and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 31, 2017·19 cites·20 claims
- 0495US9799705B1Semiconductor device and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 24, 2017·30 cites·18 claims
- 0593US11056495B2Structure of memory device having floating gate with protruding structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jul 6, 2021·8 cites·19 claims
- 0693US9859335B1Semiconductor device having memory cell structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 2, 2018·11 cites·19 claims
- 0792US10332884B2FinFET semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 25, 2019·13 cites·5 claims
- 0888US10192874B2Nonvolatile memory cell and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 29, 2019·6 cites·15 claims
- 0988US9379128B1Split gate non-volatile memory device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 28, 2016·7 cites·19 claims
- 1086US10868197B1Structure of memory device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Dec 15, 2020·4 cites·20 claims
- 1186US2025380410A1Memory deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1284US11765893B2Structure of memory device having floating gate with protruding structureUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
- 1381US9570545B2High voltage trench transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Feb 14, 2017·4 cites·20 claims
- 1479US12185532B2Structure of memory device having floating gate with protruding structureUNITED MICROELECTRONICS CORP·Filed 2023·Granted Dec 31, 2024·0 cites·4 claims
- 1574US12414294B2Memory deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 1673US12057481B2Method for forming semiconductor memory device having a t-shaped erase gateUNITED MICROELECTRONICS CORP·Filed 2023·Granted Aug 6, 2024·0 cites·10 claims
- 1773US8999769B2Integration of high voltage trench transistor with low voltage CMOS transistorVERMA PURAKH RAJ·Filed 2012·Granted Apr 7, 2015·4 cites·20 claims
- 1872US9852912B1Method of manufacturing semiconductor device for reducing grain size of polysiliconUNITED MICROELECTRONICS CORP·Filed 2016·Granted Dec 26, 2017·2 cites·17 claims
- 1969US11856771B2Method of forming silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FinFETUNITED MICROELECTRONICS CORP·Filed 2022·Granted Dec 26, 2023·0 cites·12 claims
- 2068US11699730B2Semiconductor memory device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jul 11, 2023·0 cites·11 claims
- 2167US8801223B2LED lampHSIEH KUAN-HONG·Filed 2012·Granted Aug 12, 2014·2 cites·7 claims
- 2263US11882699B2Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FINFET and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 23, 2024·0 cites·8 claims
- 2362US2025194092A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2454US11100995B2Structure of a nonvolatile memory device with a low-voltage transistor fabricated on a substrateUNITED MICROELECTRONICS CORP·Filed 2020·Granted Aug 24, 2021·0 cites·7 claims
- 2553US2023370024A1Multiband power amplifier circuit and radio frequency transceiverHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
- 2650US11943920B2Split gate memory with control gate having nonplanar top surfaceUNITED MICROELECTRONICS CORP·Filed 2021·Granted Mar 26, 2024·0 cites·18 claims
- 2747US2013170182A1Led lampHSIEH KUAN-HONG·Filed 2012·Application pending·0 cites
- 2846US9054133B2High voltage trench transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Jun 9, 2015·0 cites·20 claims
- 2944US10825522B2Method for fabricating low and high/medium voltage transistors on substrateUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 3, 2020·0 cites·7 claims
- 3044US10153359B2Semiconductor structure and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Dec 11, 2018·0 cites·6 claims
- 3138US9966383B2Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 8, 2018·0 cites·7 claims
- 3238US2018205013A1Resistive random access memory (rram) and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 3337US2018033961A1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Application pending·0 cites
- 3435US2017221911A1Flash memory and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →