Inventor · disambiguated record
Li Juin Yip
Also filed as: YIP LI JUIN
30 granted patents·4 pending applications·32 citations·filing 2012–2023
94Inventor score
Top patents by PatentIndex Score
34 records- 0195US9680004B2Power MOSFET with seperate gate and field plate trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jun 13, 2017·12 cites·15 claims
- 0288US11462620B2Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Oct 4, 2022·1 cites·20 claims
- 0386US10510846B2Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Dec 17, 2019·3 cites·26 claims
- 0485US9443973B2Semiconductor device with charge compensation region underneath gate trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Sep 13, 2016·6 cites·9 claims
- 0579US10872957B2Semiconductor device with needle-shaped field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 22, 2020·1 cites·20 claims
- 0679US9105713B2Semiconductor device with metal-filled groove in polysilicon gate electrodeINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Aug 11, 2015·3 cites·16 claims
- 0778US2022376062A1Semiconductor device having needle-shaped first field plate structures and needle-shaped second field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 0874US10629595B2Power semiconductor device having different gate crossings, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Apr 21, 2020·2 cites·14 claims
- 0972US12166080B2Semiconductor transistor device having a titled body contact area and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1072US10727331B2Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jul 28, 2020·1 cites·12 claims
- 1169US11699725B2Semiconductor device having an alignment layer with mask pitsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jul 11, 2023·0 cites·20 claims
- 1269US10050113B2Semiconductor device with needle-shaped field plates and a gate structure with edge and node portionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Aug 14, 2018·1 cites·21 claims
- 1368US9755066B2Reduced gate charge field-effect transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Sep 5, 2017·1 cites·14 claims
- 1465US11670684B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jun 6, 2023·0 cites·19 claims
- 1560US10453931B2Semiconductor device having termination trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Oct 22, 2019·0 cites·20 claims
- 1660US9190480B2Method and contact structure for coupling a doped body region to a trench electrode of a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Nov 17, 2015·1 cites·20 claims
- 1759US10868173B2Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Dec 15, 2020·0 cites·25 claims
- 1858US10177250B2Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jan 8, 2019·0 cites·19 claims
- 1957US10164025B2Semiconductor device having termination trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Dec 25, 2018·0 cites·15 claims
- 2055US10205015B2Reduced gate charge field-effect transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 12, 2019·0 cites·19 claims
- 2154US9768290B2Semiconductor device with metal-filled groove in polysilicon gate electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Sep 19, 2017·0 cites·21 claims
- 2253US11764272B2Semiconductor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Sep 19, 2023·0 cites·14 claims
- 2353US10903321B2Semiconductor device and method of manufacturing a semiconductor device using an alignment layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 26, 2021·0 cites·14 claims
- 2453US10453929B2Methods of manufacturing a power MOSFETINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 22, 2019·0 cites·16 claims
- 2553US9899488B2Semiconductor device having a trench with different electrode materialsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 20, 2018·0 cites·6 claims
- 2650US11296218B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 2750US9590062B2Insulating block in a semiconductor trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Mar 7, 2017·0 cites·10 claims
- 2849US10199456B2Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Feb 5, 2019·0 cites·12 claims
- 2949US2016064477A1Semiconductor Device and a Method for Manufacturing a Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Application pending·0 cites
- 3046US10276670B2Semiconductor devices and methods for forming semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 30, 2019·0 cites·18 claims
- 3144US10573731B2Semiconductor transistor and method for forming the semiconductor transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 25, 2020·0 cites·15 claims
- 3242US9799738B2Semiconductor device with field electrode and contact structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Oct 24, 2017·0 cites·16 claims
- 3341US2023055891A1Transistor Device and Method of Fabricating a Transistor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Application pending·0 cites
- 3435US2017077227A1Needle Field Plate MOSFET with Mesa Contacts and Conductive PostsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →