Inventor · disambiguated record
Lingguo Zhang
Also filed as: ZHANG LINGGUO
9 granted patents·0 citations·filing 2020–2021
72Inventor score
Files withCHANGXIN MEMORY TECH INC9
Top patents by PatentIndex Score
9 records- 0158US12419041B2Method for forming storage node contact structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Sep 16, 2025·0 cites·16 claims
- 0258US11856758B2Method for manufacturing memory and sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Dec 26, 2023·0 cites·14 claims
- 0357US11974427B2Manufacturing method of a memory and a memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Apr 30, 2024·0 cites·16 claims
- 0456US12127398B2Method for manufacturing memory using pseudo bit line structures and sacrificial layersCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 22, 2024·0 cites·20 claims
- 0555US11985815B2Method for manufacturing memory and sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 14, 2024·0 cites·15 claims
- 0652US11871562B2Method for forming storage node contact structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 9, 2024·0 cites·16 claims
- 0751US12342535B2Memory forming method and memoryCHANGXIN MEMORY TECH INC·Filed 2020·Granted Jun 24, 2025·0 cites·6 claims
- 0848US12178036B2Method for forming memory and memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Dec 24, 2024·0 cites·7 claims
- 0947US12127397B2Memory device and method for forming the sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 22, 2024·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →