Inventor · disambiguated record
Long-Shih Lin
Also filed as: LIN LONG · LIN LONG-SHIH
14 granted patents·15 citations·filing 2006–2020
87Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD6APPLIED MATERIALS INC2SYSTEM GENERAL CORP2TAIWAN SEMICONDUCTOR MFG2CHIANG CHIU-CHIH1
Top patents by PatentIndex Score
14 records- 0180US11056406B2Stack of multiple deposited semiconductor layersAPPLIED MATERIALS INC·Filed 2019·Granted Jul 6, 2021·2 cites·12 claims
- 0280US9853121B2Method of fabricating a lateral insulated gate bipolar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 26, 2017·3 cites·20 claims
- 0376US9698024B2Partial SOI on power device for breakdown voltage improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 4, 2017·3 cites·20 claims
- 0472US10490467B2Methods of forming a stack of multiple deposited semiconductor layersAPPLIED MATERIALS INC·Filed 2018·Granted Nov 26, 2019·1 cites·12 claims
- 0571US8779555B2Partial SOI on power device for breakdown voltage improvementTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 15, 2014·2 cites·9 claims
- 0670US11233121B2Method of making bipolar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 0767US9647065B2Bipolar transistor structure having split collector region and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 9, 2017·1 cites·20 claims
- 0862US9111898B2Multiple layer substrateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 18, 2015·1 cites·20 claims
- 0962US9076837B2Lateral insulated gate bipolar transistor structure with low parasitic BJT gain and stable threshold voltageLIN LONG-SHIH·Filed 2012·Granted Jul 7, 2015·2 cites·20 claims
- 1057US10686036B2Method of making bipolar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 16, 2020·0 cites·20 claims
- 1150US10002761B2Method for forming a multiple layer epitaxial layer on a waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 19, 2018·0 cites·20 claims
- 1242US7732890B2Integrated circuit with high voltage junction structureSYSTEM GENERAL CORP·Filed 2006·Granted Jun 8, 2010·0 cites·11 claims
- 1339US7655990B2Voltage-clipping device with high breakdown voltageSYSTEM GENERAL CORP·Filed 2006·Granted Feb 2, 2010·0 cites·18 claims
- 1438US8125008B2Schottky device and process of making the same comprising a geometry gapCHIANG CHIU-CHIH·Filed 2006·Granted Feb 28, 2012·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →