Inventor · disambiguated record
Ludovic Ecarnot
Also filed as: ECARNOT LUDOVIC
23 granted patents·6 pending applications·62 citations·filing 2003–2024
92Inventor score
Files withSOITEC SILICON ON INSULATOR25COMMISSARIAT ENERGIE ATOMIQUE2REYNAUD PATRICK1SCHWARZENBACH WALTER1
Top patents by PatentIndex Score
29 records- 0186US6962858B2Method for reducing free surface roughness of a semiconductor waferSOITEC SILICON ON INSULATOR·Filed 2003·Granted Nov 8, 2005·45 cites·26 claims
- 0275US11282889B2Substrate for a front-side-type image sensor and method for producing such a substrateSOITEC SILICON ON INSULATOR·Filed 2018·Granted Mar 22, 2022·2 cites·15 claims
- 0373US2025072111A1Front-side-type image sensorSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 0472US2025015122A1Structure for a front-facing image sensorSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 0569US11876020B2Method for manufacturing a CFET deviceSOITEC SILICON ON INSULATOR·Filed 2019·Granted Jan 16, 2024·1 cites·20 claims
- 0669US11855120B2Substrate for a front-side-type image sensor and method for producing such a substrateSOITEC SILICON ON INSULATOR·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 0769US2024145314A1Complementary field-effect transistor device including at least one finSOITEC SILICON ON INSULATOR·Filed 2024·Application pending·0 cites
- 0867US7883628B2Method of reducing the surface roughness of a semiconductor waferSOITEC SILICON ON INSULATOR·Filed 2005·Granted Feb 8, 2011·4 cites·23 claims
- 0965US12198975B2Semiconductor on insulator structure for a front side type imagerSOITEC SILICON ON INSULATOR·Filed 2021·Granted Jan 14, 2025·0 cites·20 claims
- 1061US8389412B2Finishing method for a silicon on insulator substrateSCHWARZENBACH WALTER·Filed 2010·Granted Mar 5, 2013·1 cites·12 claims
- 1161US7749910B2Method of reducing the surface roughness of a semiconductor waferSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jul 6, 2010·2 cites·20 claims
- 1260US12344524B2Methods of fabricating semiconductor structures including cavities filled with a sacrificial materialSOITEC SILICON ON INSULATOR·Filed 2020·Granted Jul 1, 2025·0 cites·20 claims
- 1360US10777447B2Method for determining a suitable implanting energy in a donor substrate and process for fabricating a structure of semiconductor-on-insulator typeSOITEC SILICON ON INSULATOR·Filed 2017·Granted Sep 15, 2020·1 cites·6 claims
- 1460US7892861B2Method for fabricating a compound-material waferSOITEC SILICON ON INSULATOR·Filed 2006·Granted Feb 22, 2011·2 cites·18 claims
- 1557US11127624B2Method of manufacturing a semiconductor on insulator type structure, notably for a front side type imagerSOITEC SILICON ON INSULATOR·Filed 2018·Granted Sep 21, 2021·0 cites·13 claims
- 1656US12100727B2Method for manufacturing a substrate for a front-facing image sensorSOITEC SILICON ON INSULATOR·Filed 2019·Granted Sep 24, 2024·0 cites·18 claims
- 1754US8962492B2Method to thin a silicon-on-insulator substrateREYNAUD PATRICK·Filed 2010·Granted Feb 24, 2015·1 cites·14 claims
- 1853US2025140601A1Process for fabricating a double semiconductor-on-insulator structureSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 1953US2025140600A1Process for fabricating a double semiconductor-on-insulator structureSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 2052US10703627B2Methods of fabricating semiconductor structures including cavities filled with a sacrificial materialSOITEC SILICON ON INSULATOR·Filed 2014·Granted Jul 7, 2020·0 cites·13 claims
- 2151US12148755B2Front-side-type image sensorSOITEC SILICON ON INSULATOR·Filed 2019·Granted Nov 19, 2024·0 cites·17 claims
- 2251US7138344B2Method for minimizing slip line faults on a semiconductor wafer surfaceSOITEC SILICON ON INSULATOR·Filed 2003·Granted Nov 21, 2006·3 cites·20 claims
- 2350US12417942B2Process for hydrophilically bonding substratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Sep 16, 2025·0 cites·15 claims
- 2449US2024030061A1Donor substrate for the transfer of a thin layer and associated transfer methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 2545US11127775B2Substrate for front side type imager and method of manufacturing such a substrateSOITEC SILICON ON INSULATOR·Filed 2018·Granted Sep 21, 2021·0 cites·22 claims
- 2643US11205702B2Method for manufacturing a structure for forming a tridimensional monolithic integrated circuitSOITEC SILICON ON INSULATOR·Filed 2017·Granted Dec 21, 2021·0 cites·18 claims
- 2742US11114314B2Method for fabrication of a semiconductor structure including an interposer free from any through viaSOITEC SILICON ON INSULATOR·Filed 2017·Granted Sep 7, 2021·0 cites·18 claims
- 2837US10163682B2Methods of forming semiconductor structuresSOITEC SILICON ON INSULATOR·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 2933US9768057B2Method for transferring a layer from a single-crystal substrateSOITEC SILICON ON INSULATOR·Filed 2016·Granted Sep 19, 2017·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →