Inventor · disambiguated record
Max Batres
Also filed as: BATRES MAX
27 granted patents·6 pending applications·1,236 citations·filing 2002–2025
97Inventor score
Top patents by PatentIndex Score
33 records- 0198US8372204B2Susceptor for MOCVD reactorCREE INC·Filed 2006·Granted Feb 12, 2013·549 cites·16 claims
- 0298US7335920B2LED with current confinement structure and surface rougheningCREE INC·Filed 2005·Granted Feb 26, 2008·168 cites·26 claims
- 0397US8034647B2LED with substrate modifications for enhanced light extraction and method of making sameCREE INC·Filed 2010·Granted Oct 11, 2011·34 cites·15 claims
- 0497US7122844B2Susceptor for MOCVD reactorCREE INC·Filed 2002·Granted Oct 17, 2006·335 cites·25 claims
- 0594US8686431B2Gallium and nitrogen containing trilateral configuration for optical devicesBATRES MAX·Filed 2011·Granted Apr 1, 2014·15 cites·25 claims
- 0693US7534633B2LED with substrate modifications for enhanced light extraction and method of making sameCREE INC·Filed 2005·Granted May 19, 2009·21 cites·21 claims
- 0790US10707374B2Etendue enhancement for light emitting diode subpixelsGLO AB·Filed 2018·Granted Jul 7, 2020·11 cites·19 claims
- 0888US8541788B2LED with current confinement structure and surface rougheningDENBAARS STEVEN P·Filed 2009·Granted Sep 24, 2013·9 cites·12 claims
- 0987US9634191B2Wire bond free wafer level LEDKELLER BERND·Filed 2007·Granted Apr 25, 2017·14 cites·30 claims
- 1086US8912025B2Method for manufacture of bright GaN LEDs using a selective removal processFELKER ANDREW J·Filed 2011·Granted Dec 16, 2014·6 cites·13 claims
- 1186US8410490B2LED with current confinement structure and surface rougheningDENBAARS STEVEN P·Filed 2007·Granted Apr 2, 2013·8 cites·37 claims
- 1285US11264539B2Light emitting diodes containing deactivated regions and methods of making the sameGLO AB·Filed 2019·Granted Mar 1, 2022·3 cites·11 claims
- 1383US10804436B2Light emitting diode containing oxidized metal contactsGLO AB·Filed 2018·Granted Oct 13, 2020·3 cites·11 claims
- 1482US8133322B2Apparatus for inverted multi-wafer MOCVD fabricationNAKAMURA SHUJI·Filed 2002·Granted Mar 13, 2012·21 cites·74 claims
- 1582US2025301830A1Indium-gallium-nitride light emitting diodes with light reflecting mirrorsAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 1681US8366830B2Susceptor apparatus for inverted type MOCVD reactorCREE INC·Filed 2003·Granted Feb 5, 2013·23 cites·30 claims
- 1780US8617909B2LED with substrate modifications for enhanced light extraction and method of making sameBATRES MAX·Filed 2009·Granted Dec 31, 2013·6 cites·19 claims
- 1877US10249786B2Thin film and substrate-removed group III-nitride based devices and methodPALO ALTO RES CT INC·Filed 2016·Granted Apr 2, 2019·2 cites·14 claims
- 1976US11127720B2Pixel repair method for a direct view display deviceGLO AB·Filed 2019·Granted Sep 21, 2021·3 cites·22 claims
- 2076US11069837B2Sub pixel light emitting diodes for direct view display and methods of making the sameGLO AB·Filed 2019·Granted Jul 20, 2021·2 cites·7 claims
- 2171US11908974B2Light emitting diodes containing deactivated regions and methods of making the sameNANOSYS INC·Filed 2022·Granted Feb 20, 2024·0 cites·4 claims
- 2270US8410499B2LED with a current confinement structure aligned with a contactDENBAARS STEVEN P·Filed 2008·Granted Apr 2, 2013·2 cites·33 claims
- 2370US2024247407A1Indium-gallium-nitride light emitting diodes with increased quantum efficiencyAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2469US10199360B2Wire bond free wafer level LEDCREE INC·Filed 2017·Granted Feb 5, 2019·1 cites·20 claims
- 2567US12336336B2Indium-gallium-nitride light emitting diodes with light reflecting mirrorsAPPLIED MATERIALS INC·Filed 2021·Granted Jun 17, 2025·0 cites·13 claims
- 2664US8772792B2LED with surface rougheningCREE INC·Filed 2013·Granted Jul 8, 2014·0 cites·21 claims
- 2762US9076926B2Gallium and nitrogen containing trilateral configuration for optical devicesSORAA INC·Filed 2014·Granted Jul 7, 2015·0 cites·28 claims
- 2861US11710805B2Light emitting diode containing oxidized metal contactsGLO AB·Filed 2020·Granted Jul 25, 2023·0 cites·8 claims
- 2958US2022259766A1Indium-gallium-nitride light emitting diodes with increased quantum efficiencyAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 3055US2024097072A1Structure and method for forming ohmic contacts to n face bulk gan substratePALO ALTO RES CT INC·Filed 2022·Application pending·0 cites
- 3154US11837683B2Indium-gallium-nitride light emitting diodes with increased red-light quantum efficiencyAPPLIED MATERIALS INC·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
- 3251US2024036364A1Optically activated object mass transfer systemPALO ALTO RES CT INC·Filed 2022·Application pending·0 cites
- 3344US2008197369A1Double flip semiconductor device and method for fabricationCREE INC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →