Inventor · disambiguated record
Maureen R. Brongo
Also filed as: BRONGO MAUREEN · BRONGO MAUREEN R · BRONGO Maureen Rosenberg
18 granted patents·1,006 citations·filing 1998–2018
95Inventor score
Files withCONEXANT SYSTEMS INC7NEWPORT FAB LLC7SKYWORKS SOLUTIONS INC2NEWPORT FAB LLC INC1ROCKWELL SCIENT LICENSING LLC1
Top patents by PatentIndex Score
18 records- 0198US6187672B1Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturingCONEXANT SYSTEMS INC·Filed 1998·Granted Feb 13, 2001·512 cites·12 claims
- 0292US10153306B2Transistor layout with low aspect ratioSKYWORKS SOLUTIONS INC·Filed 2017·Granted Dec 11, 2018·11 cites·20 claims
- 0391US6245663B1IC interconnect structures and methods for making sameCONEXANT SYSTEMS INC·Filed 1998·Granted Jun 12, 2001·129 cites·12 claims
- 0489US6984577B1Damascene interconnect structure and fabrication method having air gaps between metal lines and metal layersNEWPORT FAB LLC·Filed 2000·Granted Jan 10, 2006·61 cites·18 claims
- 0587US6271127B1Method for dual damascene process using electron beam and ion implantation cure methods for low dielectric constant materialsCONEXANT SYSTEMS INC·Filed 1999·Granted Aug 7, 2001·101 cites·20 claims
- 0683US6627539B1Method of forming dual-damascene interconnect structures employing low-k dielectric materialsNEWPORT FAB LLC·Filed 1998·Granted Sep 30, 2003·70 cites·43 claims
- 0781US6251796B1Method for fabrication of ceramic tantalum nitride and improved structures based thereonCONEXANT SYSTEMS INC·Filed 2000·Granted Jun 26, 2001·23 cites·15 claims
- 0861US6836400B2Structures based on ceramic tantalum nitrideNEWPORT FAB LLC·Filed 2001·Granted Dec 28, 2004·7 cites·32 claims
- 0961US6709564B1Integrated circuit plating using highly-complexed copper plating bathsROCKWELL SCIENT LICENSING LLC·Filed 1999·Granted Mar 23, 2004·25 cites·14 claims
- 1058US7060557B1Fabrication of high-density capacitors for mixed signal/RF circuitsNEWPORT FAB LLC INC·Filed 2002·Granted Jun 13, 2006·10 cites·13 claims
- 1157US6383821B1Semiconductor device and processCONEXANT SYSTEMS INC·Filed 1999·Granted May 7, 2002·22 cites·18 claims
- 1257US6291361B1Method and apparatus for high-resolution in-situ plasma etching of inorganic and metal filmsCONEXANT SYSTEMS INC·Filed 1999·Granted Sep 18, 2001·17 cites·11 claims
- 1356US6798065B2Method and apparatus for high-resolution in-situ plasma etching of inorganic and metals filmsNEWPORT FAB LLC·Filed 2001·Granted Sep 28, 2004·4 cites·17 claims
- 1452US10950635B2Orthogonal transistor layoutsSKYWORKS SOLUTIONS INC·Filed 2018·Granted Mar 16, 2021·0 cites·14 claims
- 1550US7049246B1Method for selective fabrication of high capacitance density areas in a low dielectric constant materialNEWPORT FAB LLC·Filed 2000·Granted May 23, 2006·4 cites·4 claims
- 1650US6328848B1Apparatus for high-resolution in-situ plasma etching of inorganic and metal filmsCONEXANT SYSTEMS INC·Filed 2000·Granted Dec 11, 2001·2 cites·7 claims
- 1742US6787911B1Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturingNEWPORT FAB LLC·Filed 1999·Granted Sep 7, 2004·8 cites·21 claims
- 1840US7109125B1Selective fabrication of high capacitance density areas in a low dielectric constant materialNEWPORT FAB LLC·Filed 2004·Granted Sep 19, 2006·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →