Inventor · disambiguated record
Mark Clark
Also filed as: CLARK MARK · CLARK MARK H · CLARK MARK HAROLD
43 granted patents·6 pending applications·479 citations·filing 2002–2016
98Inventor score
Top patents by PatentIndex Score
49 records- 0198US7824956B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2007·Granted Nov 2, 2010·101 cites·30 claims
- 0297US9166163B2Sub-oxide interface layer for two-terminal memoryCROSSBAR INC·Filed 2013·Granted Oct 20, 2015·23 cites·29 claims
- 0397US7615439B1Damascene process for carbon memory element with MIIM diodeSANDISK CORP·Filed 2008·Granted Nov 10, 2009·112 cites·20 claims
- 0495US9583701B1Methods for fabricating resistive memory device switching material using ion implantationCROSSBAR INC·Filed 2014·Granted Feb 28, 2017·16 cites·20 claims
- 0595US8946667B1Barrier structure for a silver based RRAM and methodCLARK MARK HAROLD·Filed 2012·Granted Feb 3, 2015·27 cites·20 claims
- 0692US9318531B1SiC—Si3N4 nanolaminates as a semiconductor for MSM snapback selector devicesINTERMOLECULAR INC·Filed 2014·Granted Apr 19, 2016·10 cites·20 claims
- 0791US9246092B1Tunneling barrier creation in MSM stack as a selector device for non-volatile memory applicationINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·8 cites·14 claims
- 0890US8558220B2Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the sameSCHRICKER APRIL·Filed 2007·Granted Oct 15, 2013·17 cites·51 claims
- 0989US9412790B1Scalable RRAM device architecture for a non-volatile memory device and methodCROSSBAR INC·Filed 2012·Granted Aug 9, 2016·9 cites·20 claims
- 1089US7897453B2Dual insulating layer diode with asymmetric interface state and method of fabricationSANDISK 3D LLC·Filed 2008·Granted Mar 1, 2011·20 cites·39 claims
- 1189US7846782B2Diode array and method of making thereofSANDISK 3D LLC·Filed 2007·Granted Dec 7, 2010·13 cites·12 claims
- 1287US8796102B1Device structure for a RRAM and methodCLARK MARK HAROLD·Filed 2012·Granted Aug 5, 2014·7 cites·10 claims
- 1386US7902537B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2007·Granted Mar 8, 2011·8 cites·25 claims
- 1486US6815077B1Low temperature, low-resistivity heavily doped p-type polysilicon depositionMATRIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 9, 2004·29 cites·20 claims
- 1585US9252191B2Seed layer for a p+ silicon germanium material for a non-volatile memory device and methodCLARK MARK HAROLD·Filed 2011·Granted Feb 2, 2016·7 cites·20 claims
- 1682US8467224B2Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefromSCHRICKER APRIL D·Filed 2009·Granted Jun 18, 2013·11 cites·14 claims
- 1782US8072791B2Method of making nonvolatile memory device containing carbon or nitrogen doped diodeHERNER S BRAD·Filed 2007·Granted Dec 6, 2011·7 cites·21 claims
- 1881US8236623B2Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the sameSCHRICKER APRIL·Filed 2007·Granted Aug 7, 2012·7 cites·61 claims
- 1980US8501522B2Intermetal stack for use in a photovoltaic cellHERNER S BRAD·Filed 2011·Granted Aug 6, 2013·4 cites·19 claims
- 2077US8450710B2Low temperature p+ silicon junction material for a non-volatile memory deviceCLARK MARK HAROLD·Filed 2011·Granted May 28, 2013·5 cites·30 claims
- 2176US7935594B2Damascene process for carbon memory element with MIIM diodeSANDISK 3D LLC·Filed 2009·Granted May 3, 2011·4 cites·20 claims
- 2275US9269897B2Device structure for a RRAM and methodCROSSBAR INC·Filed 2014·Granted Feb 23, 2016·2 cites·30 claims
- 2374US7977667B2Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2009·Granted Jul 12, 2011·5 cites·23 claims
- 2473US9680092B2Current selectors formed using single stack structuresINTERMOLECULAR INC·Filed 2016·Granted Jun 13, 2017·2 cites·14 claims
- 2570US8049104B2Intermetal stack for use in a photovoltaic cellTWIN CREEK TECHNOLOGIES INC·Filed 2009·Granted Nov 1, 2011·4 cites·6 claims
- 2668US9601690B1Sub-oxide interface layer for two-terminal memoryCROSSBAR INC·Filed 2015·Granted Mar 21, 2017·1 cites·20 claims
- 2768US8102694B2Nonvolatile memory device containing carbon or nitrogen doped diodeHERNER S BRAD·Filed 2007·Granted Jan 24, 2012·6 cites·22 claims
- 2867US9455393B1Low temperature deposition of low loss dielectric layers in superconducting circuitsINTERMOLECULAR INC·Filed 2015·Granted Sep 27, 2016·1 cites·15 claims
- 2966US9368721B1Diamond like carbon (DLC) as a thermal sink in a selector stack for non-volatile memory applicationINTERMOLECULAR INC·Filed 2014·Granted Jun 14, 2016·1 cites·18 claims
- 3064US8373150B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2011·Granted Feb 12, 2013·1 cites·18 claims
- 3160US6960794B2Formation of thin channels for TFT devices to ensure low variability of threshold voltagesMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 1, 2005·8 cites·21 claims
- 3256US8816315B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2013·Granted Aug 26, 2014·0 cites·24 claims
- 3356US8450835B2Reverse leakage reduction and vertical height shrinking of diode with halo dopingCHEN XIYING·Filed 2008·Granted May 28, 2013·1 cites·12 claims
- 3452US9337238B1Photo-induced MSM stackINTERMOLECULAR INC·Filed 2014·Granted May 10, 2016·0 cites·20 claims
- 3551US7419701B2Low-temperature, low-resistivity heavily doped p-type polysilicon depositionSANDISK 3D LLC·Filed 2004·Granted Sep 2, 2008·2 cites·18 claims
- 3649US8809114B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSANDISK 3D LLC·Filed 2013·Granted Aug 19, 2014·0 cites·21 claims
- 3749US7994064B2Selective etch for damage at exfoliated surfaceTWIN CREEKS TECHNOLOGIES INC·Filed 2009·Granted Aug 9, 2011·0 cites·24 claims
- 3848US10192927B1Semiconductor device for a non-volatile (NV) resistive memory and array structure for an array of NV resistive memoryCROSSBAR INC·Filed 2016·Granted Jan 29, 2019·0 cites·20 claims
- 3947US8507315B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSCHRICKER APRIL D·Filed 2012·Granted Aug 13, 2013·0 cites·9 claims
- 4047US2010283053A1Nonvolatile memory array comprising silicon-based diodes fabricated at low temperatureSANDISK 3D LLC·Filed 2009·Application pending·0 cites
- 4145US8268678B2Diode array and method of making thereofMAXWELL STEVEN·Filed 2010·Granted Sep 18, 2012·0 cites·5 claims
- 4245US8173486B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSCHRICKER APRIL D·Filed 2010·Granted May 8, 2012·0 cites·15 claims
- 4345US2009166610A1Memory cell with planarized carbon nanotube layer and methods of forming the sameSCHRICKER APRIL·Filed 2007·Application pending·0 cites
- 4441US2016149129A1Using Metal Silicides as Electrodes for MSM Stack in Selector for Non-Volatile Memory ApplicationINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 4541US2016148976A1Simultaneous Carbon and Nitrogen Doping of Si in MSM Stack as a Selector Device for Non-Volatile Memory ApplicationINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 4640US2016141335A1Diamond Like Carbon (DLC) in a Semiconductor Stack as a Selector for Non-Volatile Memory ApplicationINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 4739US9443906B2TiOx based selector elementINTERMOLECULAR INC·Filed 2013·Granted Sep 13, 2016·0 cites·19 claims
- 4836US9070859B1Low temperature deposition method for polycrystalline silicon material for a non-volatile memory deviceCLARK MARK HAROLD·Filed 2012·Granted Jun 30, 2015·0 cites·18 claims
- 4936US2017104031A1Selector ElementsINTERMOLECULAR INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →