Inventor · disambiguated record
Matteo Dainese
Also filed as: DAINESE MATTEO
55 granted patents·12 pending applications·57 citations·filing 2006–2025
97Inventor score
Files withINFINEON TECHNOLOGIES AG31INFINEON TECHNOLOGIES AUSTRIA AG23INFINEON TECH DRESDEN GMBH & CO KG5REPLISAURUS TECHNOLOGIES AB4FREDENBERG MIKAEL3
Top patents by PatentIndex Score
67 records- 0196US11075291B1Isolation structure for IGBT devices having an integrated diodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jul 27, 2021·7 cites·20 claims
- 0295US9917186B2Semiconductor device with control structure including buried portions and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·9 cites·14 claims
- 0391US9741570B1Method of manufacturing a reverse-blocking IGBTINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Aug 22, 2017·7 cites·16 claims
- 0490US10854739B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 1, 2020·2 cites·22 claims
- 0589US11610976B2Semiconductor device including a transistor with one or more barrier regionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Mar 21, 2023·2 cites·20 claims
- 0689US10615272B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·4 cites·15 claims
- 0788US9876100B2Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zonesINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 23, 2018·4 cites·20 claims
- 0886US9997602B2Semiconductor device with transistor cells and enhancement cells with delayed control signalsINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 12, 2018·4 cites·22 claims
- 0982US12034066B2Power semiconductor device having a barrier regionINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 1082US11581428B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·1 cites·19 claims
- 1180US12211945B2Power diode and method of manufacturing a power diodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Jan 28, 2025·0 cites·13 claims
- 1280US10304952B2Power semiconductor device with dV/dt controllability and cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·2 cites·31 claims
- 1379US9536999B2Semiconductor device with control structure including buried portions and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 3, 2017·3 cites·14 claims
- 1478US2025220937A1Semiconductor device having a transistor with active mesas and dummy mesasINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 1576US12283621B2Semiconductor device having a transistor with trenches and mesasINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 1675US10381467B2Semiconductor device with separation regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 13, 2019·1 cites·12 claims
- 1775US8617362B2Electrode and method of forming the master electrodeFREDENBERG MIKAEL·Filed 2012·Granted Dec 31, 2013·3 cites·19 claims
- 1874US9935126B2Method of forming a semiconductor substrate with buried cavities and dielectric support structuresINFINEON TECHNOLOGIES AG·Filed 2014·Granted Apr 3, 2018·2 cites·15 claims
- 1974US9231091B2Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zonesINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 5, 2016·2 cites·18 claims
- 2074US2024413229A1Semiconductor device having first trenches with a gate electrode and second trenches with a source electrodeINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2173US10840362B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 17, 2020·1 cites·16 claims
- 2272US11594621B2Method of processing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 28, 2023·0 cites·27 claims
- 2372US10790384B2Power semiconductor device having overvoltage protectionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Sep 29, 2020·1 cites·20 claims
- 2472US10355116B2Power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jul 16, 2019·1 cites·20 claims
- 2571US11695083B2Power diode and method of manufacturing a power diodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jul 4, 2023·0 cites·10 claims
- 2671US10410911B2Buried insulator regions and methods of formation thereofINFINEON TECHNOLOGIES AG·Filed 2017·Granted Sep 10, 2019·1 cites·16 claims
- 2768US11610986B2Power semiconductor switch having a cross-trench structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Mar 21, 2023·0 cites·16 claims
- 2867US12074212B2Semiconductor device including a plurality of trenchesINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 27, 2024·0 cites·10 claims
- 2967US11843045B2Power semiconductor device having overvoltage protection and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Dec 12, 2023·0 cites·20 claims
- 3065US11888061B2Power semiconductor device having elevated source regions and recessed body regionsINFINEON TECH DRESDEN GMBH & CO KG·Filed 2022·Granted Jan 30, 2024·0 cites·15 claims
- 3165US10903344B2Semiconductor device with separation regionsINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 26, 2021·0 cites·21 claims
- 3263US11949006B2Power semiconductor device with p-contact and doped insulation blocks defining contact holesINFINEON TECH DRESDEN GMBH & CO KG·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 3363US11848377B2Semiconductor component with edge termination regionINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 19, 2023·0 cites·9 claims
- 3462US10923578B2Semiconductor device comprising a barrier regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 16, 2021·0 cites·11 claims
- 3561US12018387B2Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jun 25, 2024·0 cites·11 claims
- 3661US11869985B2Diode including a plurality of trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jan 9, 2024·0 cites·10 claims
- 3761US11075290B2Power semiconductor device having a cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 27, 2021·0 cites·18 claims
- 3860US10217837B2Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structuresINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 26, 2019·0 cites·20 claims
- 3959US10978596B2Power diode and method of manufacturing a power diodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Apr 13, 2021·0 cites·15 claims
- 4059US9570577B2Semiconductor device and insulated gate bipolar transistor with source zones formed in semiconductor mesasINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 14, 2017·0 cites·16 claims
- 4158US11495680B2Semiconductor device with integrated current sensorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Nov 8, 2022·0 cites·21 claims
- 4258US11257946B2Method of forming a power semiconductor deviceINFINEON TECH DRESDEN GMBH & CO KG·Filed 2020·Granted Feb 22, 2022·0 cites·17 claims
- 4358US11018051B2Power semiconductor device with reliably verifiable p-contact and methodINFINEON TECH DRESDEN GMBH & CO KG·Filed 2019·Granted May 25, 2021·0 cites·23 claims
- 4457US11018249B2Semiconductor component with edge termination regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 25, 2021·0 cites·19 claims
- 4557US9837506B2Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structuresINFINEON TECHNOLOGIES AG·Filed 2017·Granted Dec 5, 2017·0 cites·10 claims
- 4657US9441309B2Electrode and method of forming the master electrodeLUXEMBOURG INST OF SCIENCE AND TECH (LIST)·Filed 2013·Granted Sep 13, 2016·0 cites·15 claims
- 4755US10825906B2Semiconductor device with transistor cells and enhancement cells with delayed control signalsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 3, 2020·0 cites·21 claims
- 4855US2009229855A1electrode and method of forming the master electrodeREPLISAURUS TECHNOLOGIES AB·Filed 2009·Application pending·0 cites
- 4955US2009229857A1Electrode and method of forming the electrodeREPLISAURUS TECHNOLOGIES AB·Filed 2009·Application pending·0 cites
- 5054US10276708B2Reverse-blocking IGBT having a reverse-blocking edge termination structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 30, 2019·0 cites·14 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →