Inventor · disambiguated record
Manzur Gill
Also filed as: GILL MANZUR
75 granted patents·1 pending application·3,943 citations·filing 1988–2004
99Inventor score
Top patents by PatentIndex Score
76 records- 0199US6625054B2Method and apparatus to program a phase change memoryINTEL CORP·Filed 2001·Granted Sep 23, 2003·312 cites·37 claims
- 0299US6567293B1Single level metal memory cell using chalcogenide claddingOVONYX INC·Filed 2000·Granted May 20, 2003·645 cites·24 claims
- 0399US6545907B1Technique and apparatus for performing write operations to a phase change material memory deviceOVONYX INC·Filed 2001·Granted Apr 8, 2003·358 cites·40 claims
- 0499US6531373B2Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elementsOVONYX INC·Filed 2000·Granted Mar 11, 2003·364 cites·15 claims
- 0598US5162879ADiffusionless conductor/oxide semiconductor field effect transistor and methods for making and using the sameTEXAS INSTRUMENTS INC·Filed 1991·Granted Nov 10, 1992·257 cites·19 claims
- 0696US5313432ASegmented, multiple-decoder memory array and method for programming a memory arrayTEXAS INSTRUMENTS INC·Filed 1991·Granted May 17, 1994·176 cites·30 claims
- 0792US6791107B2Silicon on insulator phase change memoryOVONYX INC·Filed 2003·Granted Sep 14, 2004·56 cites·10 claims
- 0892US5420060AMethod of making contract-free floating-gate memory array with silicided buried bitlines and with single-step defined floating gatesTEXAS INSTRUMENTS INC·Filed 1993·Granted May 30, 1995·97 cites·21 claims
- 0988US4823318ADriving circuitry for EEPROM memory cellTEXAS INSTRUMENTS INC·Filed 1988·Granted Apr 18, 1989·55 cites·19 claims
- 1087US5060195AHot electron programmable, tunnel electron erasable contactless EEPROMTEXAS INSTRUMENTS INC·Filed 1990·Granted Oct 22, 1991·73 cites·16 claims
- 1187US5047981ABit and block erasing of an electrically erasable and programmable read-only memory arrayTEXAS INSTRUMENTS INC·Filed 1989·Granted Sep 10, 1991·54 cites·11 claims
- 1285US5550772AMemory array utilizing multi-state memory cellsNAT SEMICONDUCTOR CORP·Filed 1995·Granted Aug 27, 1996·64 cites·17 claims
- 1385US5168335AElectrically programmable, electrically erasable memory array cell with field plateTEXAS INSTRUMENTS INC·Filed 1991·Granted Dec 1, 1992·68 cites·8 claims
- 1485US5150179ADiffusionless source/drain conductor electrically-erasable, electrically-programmable read-only memory and method for making and using the sameTEXAS INSTRUMENTS INC·Filed 1990·Granted Sep 22, 1992·57 cites·41 claims
- 1584US5017515AProcess for minimizing lateral distance between elements in an integrated circuit by using sidewall spacersTEXAS INSTRUMENTS INC·Filed 1989·Granted May 21, 1991·65 cites·14 claims
- 1681US5110753ACross-point contact-free floating-gate memory array with silicided buried bitlinesTEXAS INSTRUMENTS INC·Filed 1990·Granted May 5, 1992·45 cites·20 claims
- 1781US5023680AFloating-gate memory array with silicided buried bitlines and with single-step-defined floating gatesTEXAS INSTRUMENTS INC·Filed 1988·Granted Jun 11, 1991·40 cites·23 claims
- 1880US6912146B2Using an MOS select gate for a phase change memoryOVONYX INC·Filed 2002·Granted Jun 28, 2005·26 cites·17 claims
- 1979US5661060AMethod for forming field oxide regionsNAT SEMICONDUCTOR CORP·Filed 1994·Granted Aug 26, 1997·67 cites·3 claims
- 2078US5371031AMethod of making EEPROM array with buried N+ windows and with separate erasing and programming regionsTEXAS INSTRUMENTS INC·Filed 1993·Granted Dec 6, 1994·43 cites·10 claims
- 2178US5187683AMethod for programming EEPROM memory arraysTEXAS INSTRUMENTS INC·Filed 1990·Granted Feb 16, 1993·43 cites·24 claims
- 2277US5537362ALow-voltage EEPROM using charge-pumped word linesNAT SEMICONDUCTOR CORP·Filed 1994·Granted Jul 16, 1996·41 cites·30 claims
- 2377US5177705AProgramming of an electrically-erasable, electrically-programmable, read-only memory arrayTEXAS INSTRUMENTS INC·Filed 1989·Granted Jan 5, 1993·32 cites·20 claims
- 2477US5147816AMethod of making nonvolatile memory array having cells with two tunelling windowsTEXAS INSTRUMENTS INC·Filed 1991·Granted Sep 15, 1992·46 cites·6 claims
- 2577US5045489AMethod of making a high-speed 2-transistor cell for programmable/EEPROM devices with separate read and write transistorsTEXAS INSTRUMENTS INC·Filed 1989·Granted Sep 3, 1991·33 cites·10 claims
- 2676US5469383AMemory cell array having continuous-strip field-oxide regionsTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 21, 1995·31 cites·12 claims
- 2774US5418741AVirtual ground memory cell arrayTEXAS INSTRUMENTS INC·Filed 1994·Granted May 23, 1995·31 cites·8 claims
- 2874US5010028AMethod of making hot electron programmable, tunnel electron erasable contactless EEPROMTEXAS INSTRUMENTS INC·Filed 1989·Granted Apr 23, 1991·31 cites·10 claims
- 2974US4947222AElectrically programmable and erasable memory cells with field plate conductor defined drain regionsTEXAS INSTRUMENTS INC·Filed 1989·Granted Aug 7, 1990·31 cites·17 claims
- 3073US5173436AMethod of manufacturing an EEPROM with trench-isolated bitlinesTEXAS INSTRUMENTS INC·Filed 1991·Granted Dec 22, 1992·52 cites·20 claims
- 3173US5051796ACross-point contact-free array with a high-density floating-gate structureTEXAS INSTRUMENTS INC·Filed 1989·Granted Sep 24, 1991·29 cites·22 claims
- 3272US5025494ACross-point contact-free floating-gate memory array with silicided buried bitlinesTEXAS INSTRUMENTS INC·Filed 1988·Granted Jun 18, 1991·28 cites·22 claims
- 3369US5354703AEEPROM cell array with tight erase distributionTEXAS INSTRUMENTS INC·Filed 1993·Granted Oct 11, 1994·21 cites·6 claims
- 3469US5238855ACross-point contact-free array with a high-density floating-gate structureTEXAS INSTRUMENTS INC·Filed 1991·Granted Aug 24, 1993·28 cites·21 claims
- 3568US6995446B2Isolating phase change memories with schottky diodes and guard ringsOVONYX INC·Filed 2002·Granted Feb 7, 2006·13 cites·13 claims
- 3667US5051795AEEPROM with trench-isolated bitlinesTEXAS INSTRUMENTS INC·Filed 1989·Granted Sep 24, 1991·33 cites·20 claims
- 3767US5017980AElectrically-erasable, electrically-programmable read-only memory cellTEXAS INSTRUMENTS INC·Filed 1990·Granted May 21, 1991·27 cites·14 claims
- 3866US5523249AMethod of making an EEPROM cell with separate erasing and programming regionsTEXAS INSTRUMENTS INC·Filed 1994·Granted Jun 4, 1996·25 cites·3 claims
- 3966US5218568AElectrically-erasable, electrically-programmable read-only memory cell, an array of such cells and methods for making and using the sameTEXAS INSTRUMENTS INC·Filed 1991·Granted Jun 8, 1993·28 cites·4 claims
- 4063US5134449ANonvolatile memory cell with field-plate switchTEXAS INSTRUMENTS INC·Filed 1991·Granted Jul 28, 1992·22 cites·16 claims
- 4163US5120571AFloating-gate memory array with silicided buried bitlines and with single-step-defined floating gatesTEXAS INSTRUMENTS INC·Filed 1991·Granted Jun 9, 1992·23 cites·21 claims
- 4262US6836423B2Single level metal memory cell using chalcogenide claddingOVONYX INC·Filed 2002·Granted Dec 28, 2004·4 cites·5 claims
- 4362US5565371AMethod of making EPROM with separate erasing and programming regionsTEXAS INSTRUMENTS INC·Filed 1995·Granted Oct 15, 1996·28 cites·10 claims
- 4462US5350706ACMOS memory cell arrayTEXAS INSTRUMENTS INC·Filed 1992·Granted Sep 27, 1994·19 cites·7 claims
- 4561US5740105AMemory cell array with LOCOS free isolationTEXAS INSTRUMENTS INC·Filed 1996·Granted Apr 14, 1998·18 cites·10 claims
- 4661US5200350AFloating-gate memory array with silicided buried bitlinesTEXAS INSTRUMENTS INC·Filed 1991·Granted Apr 6, 1993·21 cites·20 claims
- 4760US4994403AMethod of making an electrically programmable, electrically erasable memory array cellTEXAS INSTRUMENTS INC·Filed 1989·Granted Feb 19, 1991·17 cites·4 claims
- 4859US5521110AMethod of making EEPROM devices with smaller cell sizeNAT SEMICONDUCTOR CORP·Filed 1995·Granted May 28, 1996·14 cites·5 claims
- 4958US5245212ASelf-aligned field-plate isolation between active elementsTEXAS INSTRUMENTS INC·Filed 1991·Granted Sep 14, 1993·15 cites·3 claims
- 5058US5100819AMethod of making electrically programmable and erasable memory cells with field plate conductor defined drain regionsTEXAS INSTRUMENTS INC·Filed 1990·Granted Mar 31, 1992·18 cites·28 claims
Showing the top 50 of 76 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →