Inventor · disambiguated record
Masaaki Hagihara
Also filed as: HAGIHARA MASAAKI
8 granted patents·1 pending application·71 citations·filing 2000–2006
84Inventor score
Technology areasH10P
Top patents by PatentIndex Score
9 records- 0193US7344993B2Low-pressure removal of photoresist and etch residueTOKYO ELECTRON LTD INC·Filed 2005·Granted Mar 18, 2008·39 cites·43 claims
- 0270US7700494B2Low-pressure removal of photoresist and etch residueTOKYO ELECTRON LTD INC·Filed 2004·Granted Apr 20, 2010·14 cites·45 claims
- 0367US7743731B2Reduced contaminant gas injection system and method of usingTOKYO ELECTRON LTD·Filed 2006·Granted Jun 29, 2010·3 cites·16 claims
- 0460US6780342B1Method of etching and method of plasma treatmentTOKYO ELECTRON LTD·Filed 2000·Granted Aug 24, 2004·7 cites·35 claims
- 0558US7465673B2Method and apparatus for bilayer photoresist dry developmentTOKYO ELECTRON LTD·Filed 2003·Granted Dec 16, 2008·7 cites·14 claims
- 0644US7709397B2Method and system for etching a high-k dielectric materialTOKYO ELECTRON LTD·Filed 2004·Granted May 4, 2010·1 cites·12 claims
- 0740US7211197B2Etching method and plasma processing methodTOKYO ELECTRON LTD·Filed 2004·Granted May 1, 2007·0 cites·12 claims
- 0839US2007059938A1Method and system for etching silicon oxide and silicon nitride with high selectivity relative to siliconKIDA HANAKO·Filed 2005·Application pending·0 cites
- 0935US7582220B1Etching methodTOKYO ELECTRON LTD·Filed 2000·Granted Sep 1, 2009·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →