Inventor · disambiguated record
Masaaki Higashitani
Also filed as: HIGASHITANI MASAAKI
258 granted patents·19 pending applications·3,960 citations·filing 1993–2024
99Inventor score
Files withSANDISK TECHNOLOGIES LLC99SANDISK TECHNOLOGIES INC77SANDISK CORP41ADVANCED MICRO DEVICES INC13HIGASHITANI MASAAKI9
Top patents by PatentIndex Score
277 records- 0199US11107516B1Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 31, 2021·24 cites·20 claims
- 0299US10923196B1Erase operation in 3D NANDSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 16, 2021·13 cites·19 claims
- 0399US10510738B2Three-dimensional memory device having support-die-assisted source power distribution and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 17, 2019·104 cites·20 claims
- 0499US9711229B13D NAND with partial block eraseSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 18, 2017·53 cites·19 claims
- 0599US9449985B1Memory cell with high-k charge trapping layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·41 cites·29 claims
- 0699US9425299B1Three-dimensional memory device having a heterostructure quantum well channelSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 23, 2016·50 cites·22 claims
- 0798US11963352B2Three-dimensional memory device with vertical field effect transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 16, 2024·5 cites·20 claims
- 0898US11856765B2Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Dec 26, 2023·6 cites·14 claims
- 0998US11791327B2Three-dimensional memory device having support-die-assisted source power distribution and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 17, 2023·4 cites·14 claims
- 1098US11676954B2Bonded three-dimensional memory devices with backside source power supply mesh and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 13, 2023·3 cites·20 claims
- 1198US11562975B2Bonded assembly employing metal-semiconductor bonding and metal-metal bonding and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 24, 2023·8 cites·20 claims
- 1298US11387142B1Semiconductor device containing bit lines separated by air gaps and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jul 12, 2022·7 cites·20 claims
- 1398US11355486B2Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layerSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 7, 2022·10 cites·20 claims
- 1498US11348901B1Interfacial tilt-resistant bonded assembly and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 31, 2022·8 cites·20 claims
- 1598US10319680B1Metal contact via structure surrounded by an air gap and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 11, 2019·35 cites·20 claims
- 1698US9917093B2Inter-plane offset in backside contact via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 13, 2018·41 cites·17 claims
- 1798US9721963B1Three-dimensional memory device having a transition metal dichalcogenide channelSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 1, 2017·50 cites·31 claims
- 1898US9634097B23D NAND with oxide semiconductor channelSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 25, 2017·55 cites·25 claims
- 1998US8933502B23D non-volatile memory with metal silicide interconnectHIGASHITANI MASAAKI·Filed 2011·Granted Jan 13, 2015·50 cites·27 claims
- 2098US6859397B2Source side self boosting technique for non-volatile memorySANDISK CORP·Filed 2003·Granted Feb 22, 2005·540 cites·31 claims
- 2197US10991721B2Three-dimensional memory device including liner free molybdenum word lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 27, 2021·4 cites·18 claims
- 2297US10115459B1Multiple liner interconnects for three dimensional memory devices and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·34 cites·19 claims
- 2397US10103161B2Offset backside contact via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 16, 2018·29 cites·24 claims
- 2497US9929174B1Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 27, 2018·38 cites·26 claims
- 2597US9818801B1Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·24 cites·13 claims
- 2697US9287290B13D memory having crystalline silicon NAND string channelSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 15, 2016·27 cites·14 claims
- 2797US8951859B2Method for fabricating passive devices for 3D non-volatile memoryHIGASHITANI MASAAKI·Filed 2011·Granted Feb 10, 2015·42 cites·29 claims
- 2897US8643142B2Passive devices for 3D non-volatile memoryHIGASHITANI MASAAKI·Filed 2011·Granted Feb 4, 2014·34 cites·3 claims
- 2997US8547720B2Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word linesSAMACHISA GEORGE·Filed 2011·Granted Oct 1, 2013·39 cites·12 claims
- 3097US8383479B2Integrated nanostructure-based non-volatile memory fabricationSANDISK TECHNOLOGIES INC·Filed 2010·Granted Feb 26, 2013·33 cites·47 claims
- 3197US7430138B2Erasing non-volatile memory utilizing changing word line conditions to compensate for slower erasing memory cellsSANDISK CORP·Filed 2005·Granted Sep 30, 2008·45 cites·40 claims
- 3297US6975537B2Source side self boosting technique for non-volatile memorySANDISK CORP·Filed 2005·Granted Dec 13, 2005·79 cites·38 claims
- 3396US10903222B2Three-dimensional memory device containing a carbon-doped source contact layer and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 26, 2021·13 cites·16 claims
- 3496US10840260B2Through-array conductive via structures for a three-dimensional memory device and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Nov 17, 2020·16 cites·18 claims
- 3596US9876025B2Methods for manufacturing ultrathin semiconductor channel three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 23, 2018·16 cites·34 claims
- 3696US9530506B2NAND boosting using dynamic ramping of word line voltagesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 27, 2016·27 cites·19 claims
- 3796US9368510B1Method of forming memory cell with high-k charge trapping layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 14, 2016·15 cites·22 claims
- 3896US9202579B2Compensation for temperature dependence of bit line resistanceSANDISK TECHNOLOGIES INC·Filed 2013·Granted Dec 1, 2015·34 cites·8 claims
- 3996US9082502B2Bit line and compare voltage modulation for sensing nonvolatile storage elementsSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jul 14, 2015·29 cites·27 claims
- 4096US9019775B2Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage currentCOSTA XIYING·Filed 2012·Granted Apr 28, 2015·37 cites·18 claims
- 4196US8891308B1Dynamic erase voltage step size selection for 3D non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 18, 2014·29 cites·20 claims
- 4296US8873293B1Dynamic erase voltage step size selection for 3D non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 28, 2014·32 cites·28 claims
- 4396US8867271B2Threshold voltage adjustment for a select gate transistor in a stacked non-volatile memory deviceLI HAIBO·Filed 2012·Granted Oct 21, 2014·32 cites·16 claims
- 4496US7871909B1Methods of using single spacer to triple line/space frequencySANDISK 3D LLC·Filed 2010·Granted Jan 18, 2011·30 cites·20 claims
- 4596US7755946B2Data state-based temperature compensation during sensing in non-volatile memorySANDISK CORP·Filed 2008·Granted Jul 13, 2010·47 cites·19 claims
- 4696US7295478B2Selective application of program inhibit schemes in non-volatile memorySANDISK CORP·Filed 2005·Granted Nov 13, 2007·47 cites·51 claims
- 4796US7286408B1Boosting methods for NAND flash memorySANDISK CORP·Filed 2006·Granted Oct 23, 2007·52 cites·11 claims
- 4895US11871580B2Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 9, 2024·3 cites·7 claims
- 4995US11869877B2Bonded assembly including inter-die via structures and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 9, 2024·3 cites·19 claims
- 5095US9941295B2Method of making a three-dimensional memory device having a heterostructure quantum well channelSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 10, 2018·14 cites·17 claims
Showing the top 50 of 277 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →