Inventor · disambiguated record
Masatada Horiuchi
Also filed as: HORIUCHI MASATADA · OHBA SHINYA
29 granted patents·6 pending applications·915 citations·filing 1973–2005
98Inventor score
Top patents by PatentIndex Score
35 records- 0197US6730964B2Semiconductor device and method of producing the sameHITACHI LTD·Filed 2002·Granted May 4, 2004·150 cites·7 claims
- 0294US4769686ASemiconductor deviceHITACHI LTD·Filed 1987·Granted Sep 6, 1988·170 cites·22 claims
- 0390US3967310ASemiconductor device having controlled surface charges by passivation films formed thereonHITACHI LTD·Filed 1973·Granted Jun 29, 1976·47 cites·11 claims
- 0488US4633438AStacked semiconductor memoryHITACHI LTD·Filed 1984·Granted Dec 30, 1986·48 cites·10 claims
- 0588US4514830ADefect-remediable semiconductor integrated circuit memory and spare substitution method in the sameHITACHI LTD·Filed 1982·Granted Apr 30, 1985·46 cites·15 claims
- 0682US6667199B2Semiconductor device having a replacement gate type field effect transistor and its manufacturing methodHITACHI LTD·Filed 2002·Granted Dec 23, 2003·31 cites·3 claims
- 0782US6004865AMethod of fabricating multi-layered structure having single crystalline semiconductor film formed on insulatorHITACHI LTD·Filed 1996·Granted Dec 21, 1999·45 cites·5 claims
- 0878US6800513B2Manufacturing semiconductor device including forming a buried gate covered by an insulative film and a channel layerHITACHI LTD·Filed 2002·Granted Oct 5, 2004·25 cites·23 claims
- 0978US6690060B2Field effect transistor and method of fabricating the same by controlling distribution condition of impurity region with implantation of additional ionHITACHI LTD·Filed 2001·Granted Feb 10, 2004·19 cites·10 claims
- 1077US5523602AMulti-layered structure having single crystalline semiconductor film formed on insulatorHITACHI LTD·Filed 1994·Granted Jun 4, 1996·61 cites·18 claims
- 1176US6462364B1Semiconductor integrated circuit and method for manufacturing the sameHITACHI LTD·Filed 1999·Granted Oct 8, 2002·32 cites·22 claims
- 1274US6313012B1Method of fabricating multi-layered structure having single crystalline semiconductor film formed on insulatorHITACHI LTD·Filed 1999·Granted Nov 6, 2001·30 cites·6 claims
- 1373US6987983B2Radio frequency monolithic integrated circuit and method for manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Jan 17, 2006·19 cites·15 claims
- 1471US6646296B2Semiconductor integrated circuit and method for manufacturing the sameHITACHI LTD·Filed 2002·Granted Nov 11, 2003·14 cites·14 claims
- 1570US4668970ASemiconductor deviceHITACHI LTD·Filed 1985·Granted May 26, 1987·27 cites·5 claims
- 1668US4295265AMethod for producing a nonvolatile semiconductor memoryHITACHI LTD·Filed 1979·Granted Oct 20, 1981·23 cites·11 claims
- 1767US6744099B2MIS semiconductor device and manufacturing method thereofHITACHI LTD·Filed 2003·Granted Jun 1, 2004·9 cites·9 claims
- 1865US4209806ASolid-state imaging deviceHITACHI LTD·Filed 1978·Granted Jun 24, 1980·14 cites·20 claims
- 1963US5227660ASemiconductor deviceHITACHI LTD·Filed 1991·Granted Jul 13, 1993·18 cites·14 claims
- 2058US7001818B2MIS semiconductor device and manufacturing method thereofHITACHI LTD·Filed 2004·Granted Feb 21, 2006·5 cites·7 claims
- 2157US5391912ASemiconductor device having polycrystalline silicon region forming a lead-out electrode region and extended beneath active region of transistorHITACHI LTD·Filed 1992·Granted Feb 21, 1995·15 cites·12 claims
- 2251US4887145ASemiconductor device in which electrodes are formed in a self-aligned mannerHITACHI LTD·Filed 1986·Granted Dec 12, 1989·18 cites·40 claims
- 2349US6538268B1Semiconductor device and method of producing the sameHITACHI LTD·Filed 1998·Granted Mar 25, 2003·10 cites·3 claims
- 2445US6329238B1Method of fabricating a memory device having a long data retention time with the increase in leakage current suppressedHITACHI LTD·Filed 2000·Granted Dec 11, 2001·2 cites·4 claims
- 2544US4949151ABipolar transistor having side wall base and collector contactsHITACHI LTD·Filed 1987·Granted Aug 14, 1990·12 cites·36 claims
- 2642US2004132241A1Insulated gate field effect transistor and method of fabricating the sameHITACHI LTD·Filed 2003·Application pending·0 cites
- 2741US6781202B2Semiconductor devices and their fabrication methodsHITACHI LTD·Filed 2002·Granted Aug 24, 2004·1 cites·16 claims
- 2841US6157055ASemiconductor memory device having a long data retention time with the increase in leakage current suppressedHITACHI LTD·Filed 1998·Granted Dec 5, 2000·6 cites·10 claims
- 2940US5109263ASemiconductor device with optimal distance between emitter and trench isolationHITACHI LTD·Filed 1990·Granted Apr 28, 1992·11 cites·9 claims
- 3039US5424575ASemiconductor device for SOI structure having lead conductor suitable for fine patterningHITACHI LTD·Filed 1992·Granted Jun 13, 1995·7 cites·22 claims
- 3139US2004245583A1Semiconductor device and manufacturing method thereofFiled 2004·Application pending·0 cites
- 3238US2006001111A1Semiconductor deviceRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 3337US2003146458A1Semiconductor device and process for forming sameHITACHI LTD·Filed 2002·Application pending·0 cites
- 3437US2003227062A1Semiconductor device and method of fabricating the sameFiled 2003·Application pending·0 cites
- 3532US2003008462A1Insulated gate field effect transistor and manufacturing thereofHITACHI LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →