Inventor · disambiguated record
Matthias Ilg
Also filed as: ILG MATTHIAS
18 granted patents·746 citations·filing 1995–1999
96Inventor score
Top patents by PatentIndex Score
18 records- 0196US5807792AUniform distribution of reactants in a device layerSIEMENS AG·Filed 1996·Granted Sep 15, 1998·236 cites·28 claims
- 0285US6262448B1Memory cell having trench capacitor and vertical, dual-gated transistorINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Jul 17, 2001·54 cites·6 claims
- 0385US5770469AMethod for forming semiconductor structure using modulation doped silicate glassesLAM RES CORP·Filed 1995·Granted Jun 23, 1998·78 cites·38 claims
- 0485US5753948AAdvanced damascene planar stack capacitor fabrication methodIBM·Filed 1996·Granted May 19, 1998·55 cites·8 claims
- 0582US6130145AInsitu doped metal policideSIEMENS AG·Filed 1998·Granted Oct 10, 2000·50 cites·16 claims
- 0678US6492688B1Dual work function CMOS deviceSIEMENS AG·Filed 1999·Granted Dec 10, 2002·42 cites·14 claims
- 0774US6319787B1Method for forming a high surface area trench capacitorSIEMENS AG·Filed 1998·Granted Nov 20, 2001·33 cites·3 claims
- 0872US6027968AAdvanced damascene planar stack capacitor fabrication methodIBM·Filed 1997·Granted Feb 22, 2000·28 cites·9 claims
- 0965US5928959ADishing resistanceSIEMENS AG·Filed 1997·Granted Jul 27, 1999·34 cites·39 claims
- 1061US6376348B1Reliable polycide gate stack with reduced sheet resistance and thicknessSIEMENS AG·Filed 1997·Granted Apr 23, 2002·20 cites·16 claims
- 1160US6190955B1Fabrication of trench capacitors using disposable hard maskIBM·Filed 1998·Granted Feb 20, 2001·25 cites·19 claims
- 1259US6197666B1Method for the fabrication of a doped silicon layerSIEMENS AG·Filed 1999·Granted Mar 6, 2001·21 cites·12 claims
- 1357US5935873ADeposition of carbon into nitride layer for improved selectivity of oxide to nitride etchrate for self aligned contact etchingSIEMENS AG·Filed 1997·Granted Aug 10, 1999·21 cites·22 claims
- 1449US6057250ALow temperature reflow dielectric-fluorinated BPSGIBM·Filed 1998·Granted May 2, 2000·16 cites·7 claims
- 1542US6492282B1Integrated circuits and manufacturing methodsSIEMENS AG·Filed 1997·Granted Dec 10, 2002·10 cites·6 claims
- 1641US6096654AGapfill of semiconductor structure using doped silicate glassesSIEMENS AG·Filed 1997·Granted Aug 1, 2000·8 cites·9 claims
- 1740US6048475AGapfill of semiconductor structure using doped silicate glassesSIEMENS AG·Filed 1999·Granted Apr 11, 2000·7 cites·9 claims
- 1840US5963837AMethod of planarizing the semiconductor structureSIEMENS AG·Filed 1997·Granted Oct 5, 1999·8 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →