Inventor · disambiguated record
Masayuki Iwami
Also filed as: IKEDA NARIAKI · IWAMI MASAYUKI
17 granted patents·7 pending applications·101 citations·filing 2002–2016
92Inventor score
Files withFURUKAWA ELECTRIC CO LTD9ADVANCED POWER DEVICE RES ASS6IWAMI MASAYUKI2KOKAWA TAKUYA2SATO YOSHIHIRO2
Top patents by PatentIndex Score
24 records- 0189US7679104B2Vertical type semiconductor device and manufacturing method of the deviceFURUKAWA ELECTRIC CO LTD·Filed 2007·Granted Mar 16, 2010·16 cites·10 claims
- 0287US9911842B2Nitride semiconductor device, production method thereof, diode, and field effect transistorFURUKAWA ELECTRIC CO LTD·Filed 2016·Granted Mar 6, 2018·8 cites·40 claims
- 0386US7812371B2GaN based semiconductor elementFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Oct 12, 2010·14 cites·12 claims
- 0483US8072002B2Field effect transistorNIYAMA YUKI·Filed 2009·Granted Dec 6, 2011·19 cites·19 claims
- 0582US9269577B2Method for manufacturing nitride semiconductor deviceFURUKAWA ELECTRIC CO LTD·Filed 2013·Granted Feb 23, 2016·5 cites·7 claims
- 0681US8569800B2Field effect transistorIKEDA NARIAKI·Filed 2011·Granted Oct 29, 2013·5 cites·21 claims
- 0779US8450782B2Field effect transistor, method of manufacturing field effect transistor, and method of forming grooveSATO YOSHIHIRO·Filed 2011·Granted May 28, 2013·4 cites·7 claims
- 0873US8304809B2GaN-based semiconductor device and method of manufacturing the sameKAYA SHUSUKE·Filed 2008·Granted Nov 6, 2012·7 cites·20 claims
- 0972US8067787B2Semiconductor electronic deviceKOKAWA TAKUYA·Filed 2009·Granted Nov 29, 2011·6 cites·14 claims
- 1069US6898224B2Semiconductor laser deviceFURUKAWA ELECTRIC CO LTD·Filed 2002·Granted May 24, 2005·10 cites·32 claims
- 1164US8338859B2Semiconductor electronic device having reduced threading dislocation and method of manufacturing the sameKOKAWA TAKUYA·Filed 2009·Granted Dec 25, 2012·3 cites·19 claims
- 1262US8884393B2Nitride compound semiconductor device and manufacturing method thereofADVANCED POWER DEVICE RES ASS·Filed 2013·Granted Nov 11, 2014·2 cites·10 claims
- 1361US8860038B2Nitride semiconductor device and manufacturing method for the sameIWAMI MASAYUKI·Filed 2012·Granted Oct 14, 2014·2 cites·13 claims
- 1450US9099383B2Semiconductor substrate and semiconductor device, and manufacturing method of semiconductor substrateFURUKAWA ELECTRIC CO LTD·Filed 2013·Granted Aug 4, 2015·0 cites·17 claims
- 1548US9048302B2Field effect transistor having semiconductor operating layer formed with an inclined side wallSATO YOSHIHIRO·Filed 2009·Granted Jun 2, 2015·0 cites·20 claims
- 1642US9960572B2Semiconductor deviceFURUKAWA ELECTRIC CO LTD·Filed 2016·Granted May 1, 2018·0 cites·2 claims
- 1737US8552531B2Nitride-based compound semiconductor and nitride-based compound semiconductor deviceIWAMI MASAYUKI·Filed 2011·Granted Oct 8, 2013·0 cites·10 claims
- 1837US2014008661A1Nitride-based compound semiconductor deviceADVANCED POWER DEVICE RES ASS·Filed 2013·Application pending·0 cites
- 1937US2014008615A1Semiconductor deviceADVANCED POWER DEVICE RES ASS·Filed 2013·Application pending·0 cites
- 2037US2013307024A1Semiconductor device and method for manufacturing semiconductor deviceADVANCED POWER DEVICE RES ASS·Filed 2013·Application pending·0 cites
- 2137US2013307023A1Semiconductor device and method for manufacturing semiconductor deviceADVANCED POWER DEVICE RES ASS·Filed 2013·Application pending·0 cites
- 2236US2013328106A1Semiconductor device and method for manufacturing semiconductor deviceADVANCED POWER DEVICE RES ASS·Filed 2013·Application pending·0 cites
- 2336US2010213577A1Semiconductor electronic device and process of manufacturing the sameFURUKAWA ELECTRIC CO LTD·Filed 2010·Application pending·0 cites
- 2435US2010244044A1GaN-BASED FIELD EFFECT TRANSISTORFURUKAWA ELECTRIC CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →