Inventor · disambiguated record
Masanobu Iwaya
Also filed as: IWAYA MASANOBU
19 granted patents·4 pending applications·40 citations·filing 2008–2025
91Inventor score
Top patents by PatentIndex Score
23 records- 0192US9997358B2Silicon carbide semiconductor device having stacked epitaxial layersFUJI ELECTRIC CO LTD·Filed 2016·Granted Jun 12, 2018·7 cites·12 claims
- 0291US9685333B2Manufacturing method of silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Jun 20, 2017·7 cites·6 claims
- 0388US10367092B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jul 30, 2019·6 cites·20 claims
- 0488US2025359202A1Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
- 0582US12389639B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 0681US10586703B2Method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Mar 10, 2020·2 cites·8 claims
- 0781US10079298B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Sep 18, 2018·4 cites·12 claims
- 0877US7947600B2Manufacturing method for micro-transformersFUJI ELECTRIC SYSTEMS CO LTD·Filed 2008·Granted May 24, 2011·11 cites·6 claims
- 0975US10832914B2Method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Nov 10, 2020·1 cites·6 claims
- 1072US10276653B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Apr 30, 2019·1 cites·5 claims
- 1170US11855134B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Dec 26, 2023·0 cites·19 claims
- 1270US9887270B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 6, 2018·1 cites·12 claims
- 1357US10840326B2Power semiconductor device using wide bandgap semiconductor material and method of manufacturing power semiconductor device using wide bandgap semiconductor materialFUJI ELECTRIC CO LTD·Filed 2017·Granted Nov 17, 2020·0 cites·10 claims
- 1456US10403713B2Method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Sep 3, 2019·0 cites·7 claims
- 1555US2025006795A1Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1654US2024290616A1Silicon carbide semiconductor device and manufacturing method of the sameDENSO CORP·Filed 2024·Application pending·0 cites
- 1752US10103259B2Method of manufacturing a wide bandgap vertical-type MOSFETFUJI ELECTRIC CO LTD·Filed 2018·Granted Oct 16, 2018·0 cites·3 claims
- 1849US9911846B2Semiconductor device having a bandgap wider than that of siliconFUJI ELECTRIC CO LTD·Filed 2017·Granted Mar 6, 2018·0 cites·1 claims
- 1947US12255228B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Granted Mar 18, 2025·0 cites·9 claims
- 2041US11063123B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·13 claims
- 2141US10453954B2Semiconductor device having trenches in termination structure region thereof and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2018·Granted Oct 22, 2019·0 cites·10 claims
- 2239US10756200B2Silicon carbide semiconductor element and method of manufacturing silicon carbide semiconductorFUJI ELECTRIC CO LTD·Filed 2017·Granted Aug 25, 2020·0 cites·8 claims
- 2337US2013093053A1Trench type pip capacitor, power integrated circuit device using the capacitor, and method of manufacturing the power integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →