Inventor · disambiguated record
Masayoshi Iwayama
Also filed as: IWAYAMA MASAYOSHI
24 granted patents·9 pending applications·164 citations·filing 2008–2024
94Inventor score
Top patents by PatentIndex Score
33 records- 0196US8339841B2Magnetoresistive element including upper electrode having hexagonal cross-section shape and method of manufacturing the sameIWAYAMA MASAYOSHI·Filed 2010·Granted Dec 25, 2012·31 cites·13 claims
- 0295US9231193B2Magnetic memory and manufacturing method thereofIWAYAMA MASAYOSHI·Filed 2014·Granted Jan 5, 2016·15 cites·13 claims
- 0395US8902634B2Resistance change type memory and manufacturing method thereofTOSHIBA KK·Filed 2013·Granted Dec 2, 2014·16 cites·13 claims
- 0495US8314464B2Semiconductor device and manufacturing method thereofIWAYAMA MASAYOSHI·Filed 2010·Granted Nov 20, 2012·28 cites·7 claims
- 0595US8309950B2Semiconductor device and manufacturing method thereofIWAYAMA MASAYOSHI·Filed 2010·Granted Nov 13, 2012·25 cites·11 claims
- 0694US7919826B2Magnetoresistive element and manufacturing method thereofTOSHIBA KK·Filed 2008·Granted Apr 5, 2011·22 cites·14 claims
- 0793US9306152B2Magnetic memory and method for manufacturing the sameIWAYAMA MASAYOSHI·Filed 2014·Granted Apr 5, 2016·12 cites·14 claims
- 0883US12133394B2Magnetic memory deviceKIOXIA CORP·Filed 2023·Granted Oct 29, 2024·0 cites·10 claims
- 0982US9590173B2Magnetic memory and method for manufacturing the sameIWAYAMA MASAYOSHI·Filed 2015·Granted Mar 7, 2017·4 cites·20 claims
- 1080US11094743B2Magnetic memory deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Aug 17, 2021·1 cites·7 claims
- 1174US11758739B2Magnetic memory deviceKIOXIA CORP·Filed 2021·Granted Sep 12, 2023·0 cites·5 claims
- 1271US9203015B2Magnetic storage deviceAIKAWA HISANORI·Filed 2013·Granted Dec 1, 2015·2 cites·8 claims
- 1369US7727778B2Magnetoresistive element and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Jun 1, 2010·5 cites·12 claims
- 1459US7999246B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Aug 16, 2011·1 cites·9 claims
- 1558US8058080B2Method of manufacturing a magnetic random access memory, method of manufacturing an embedded memory, and templateKAJIYAMA TAKESHI·Filed 2010·Granted Nov 15, 2011·2 cites·13 claims
- 1655US2024074327A1Magnetic memory device and method for manufacturing the sameKIOXIA CORP·Filed 2023·Application pending·0 cites
- 1754US8754433B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2012·Granted Jun 17, 2014·0 cites·8 claims
- 1852US12160997B2Magnetic memory deviceKIOXIA CORP·Filed 2022·Granted Dec 3, 2024·0 cites·13 claims
- 1952US12087343B2Magnetic memory deviceKIOXIA CORP·Filed 2022·Granted Sep 10, 2024·0 cites·21 claims
- 2051US2024321335A1Magnetic memory deviceKIOXIA CORP·Filed 2024·Application pending·0 cites
- 2150US11875834B2Magnetic memory device and memory systemKIOXIA CORP·Filed 2021·Granted Jan 16, 2024·0 cites·16 claims
- 2249US12400711B2Memory device determining target resistance statesKIOXIA CORP·Filed 2023·Granted Aug 26, 2025·0 cites·18 claims
- 2344US2011294291A1Semiconductor device and method of manufacturing the sameMATSUI YUKITERU·Filed 2011·Application pending·0 cites
- 2443US9640756B2Method for manufacturing magnetic memoryAIKAWA HISANORI·Filed 2015·Granted May 2, 2017·0 cites·19 claims
- 2542US10193058B2Magnetoresistive memory device and manufacturing method of the sameTOSHIBA MEMORY CORP·Filed 2016·Granted Jan 29, 2019·0 cites·8 claims
- 2640US9276039B2Semiconductor storage device and method of manufacturing the sameIWAYAMA MASAYOSHI·Filed 2012·Granted Mar 1, 2016·0 cites·10 claims
- 2738US2012056253A1Semiconductor memory device and manufacturing method thereofIWAYAMA MASAYOSHI·Filed 2010·Application pending·0 cites
- 2838US2011254112A1Semiconductor memory device and manufacturing method thereofTOSHIBA KK·Filed 2011·Application pending·0 cites
- 2937US2012273844A1Magnetic random access memory and method of manufacturing the sameIWAYAMA MASAYOSHI·Filed 2011·Application pending·0 cites
- 3037US2011180861A1Magnetic random access memory having magnetoresistive effect elementTOSHIBA KK·Filed 2010·Application pending·0 cites
- 3136US2008277703A1Magnetoresistive random access memory and method of manufacturing the sameIWAYAMA MASAYOSHI·Filed 2008·Application pending·0 cites
- 3233US9449892B2Manufacturing method of magnetic memory deviceAIKAWA HISANORI·Filed 2015·Granted Sep 20, 2016·0 cites·21 claims
- 3330US2016055891A1Magnetic memoryAIKAWA HISANORI·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →