Inventor · disambiguated record
Masakazu Katsuno
Also filed as: KATSUNO MASAKAZU
12 granted patents·6 pending applications·33 citations·filing 2003–2018
87Inventor score
Top patents by PatentIndex Score
18 records- 0185US9234297B2Silicon carbide single crystal wafer and manufacturing method for sameSATO SHINYA·Filed 2012·Granted Jan 12, 2016·8 cites·20 claims
- 0285US7972704B2Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefromNIPPON STEEL CORP·Filed 2009·Granted Jul 5, 2011·10 cites·11 claims
- 0377US10711369B2Method for producing silicon carbide single crystal and silicon carbide single crystal substrateSHOWA DENKO KK·Filed 2015·Granted Jul 14, 2020·1 cites·4 claims
- 0477US8901570B2Epitaxial silicon carbide single crystal substrate and process for producing the sameAIGO TAKASHI·Filed 2011·Granted Dec 2, 2014·5 cites·2 claims
- 0574US9068277B2Apparatus for manufacturing single-crystal silicon carbideNAKABAYASHI MASASHI·Filed 2009·Granted Jun 30, 2015·2 cites·8 claims
- 0669US10119200B2Silicon carbide single crystal substrate and process for producing sameSHOWA DENKO KK·Filed 2013·Granted Nov 6, 2018·0 cites·4 claims
- 0769US2019024257A1Silicon carbide single crystal substrate and process for producing sameSHOWA DENKO KK·Filed 2018·Application pending·0 cites
- 0867US2010089311A1Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the sameNIPPON STEEL CORP·Filed 2009·Application pending·0 cites
- 0967US2010083897A1Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the sameNIPPON STEEL CORP·Filed 2009·Application pending·0 cites
- 1066US9777403B2Single-crystal silicon carbide and single-crystal silicon carbide waferNAKABAYASHI MASASHI·Filed 2009·Granted Oct 3, 2017·2 cites·11 claims
- 1165US9915011B2Low resistivity single crystal silicon carbide waferFUJIMOTO TATSUO·Filed 2009·Granted Mar 13, 2018·1 cites·14 claims
- 1264US9691607B2Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the sameAIGO TAKASHI·Filed 2011·Granted Jun 27, 2017·2 cites·2 claims
- 1361US8936680B2Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and methodKATSUNO MASAKAZU·Filed 2010·Granted Jan 20, 2015·2 cites·6 claims
- 1461US2008020212A1Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the sameNIPPON STEEL CORP·Filed 2007·Application pending·0 cites
- 1552US8044408B2SiC single-crystal substrate and method of producing SiC single-crystal substrateNIPPON STEEL CORP·Filed 2009·Granted Oct 25, 2011·0 cites·9 claims
- 1645US8927396B2Production process of epitaxial silicon carbide single crystal substrateAIGO TAKASHI·Filed 2011·Granted Jan 6, 2015·0 cites·7 claims
- 1745US2005160965A1Seed crystal of silicon carbide single crystal and method for producing ingot using sameNIPPON STEEL CORP·Filed 2003·Application pending·0 cites
- 1837US2013320357A1Epitaxial silicon carbide single crystal substrate and method for producing sameAIGO TAKASHI·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →