Inventor · disambiguated record
Mang-Mang Ling
Also filed as: LING MANG-MANG
13 granted patents·16 pending applications·339 citations·filing 2006–2025
89Inventor score
Top patents by PatentIndex Score
29 records- 0198US9543163B2Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching processAPPLIED MATERIALS INC·Filed 2013·Granted Jan 10, 2017·114 cites·19 claims
- 0298US8980758B1Methods for etching an etching stop layer utilizing a cyclical etching processAPPLIED MATERIALS INC·Filed 2013·Granted Mar 17, 2015·192 cites·18 claims
- 0395US7910736B2Method for producing organic field-effect transistorsBASF AG·Filed 2007·Granted Mar 22, 2011·24 cites·13 claims
- 0481US10424487B2Atomic layer etching processesAPPLIED MATERIALS INC·Filed 2017·Granted Sep 24, 2019·3 cites·19 claims
- 0580US11380536B2Multi-step pre-clean for selective metal gap fillAPPLIED MATERIALS INC·Filed 2020·Granted Jul 5, 2022·1 cites·18 claims
- 0669US9059398B2Methods for etching materials used in MRAM applicationsAPPLIED MATERIALS INC·Filed 2013·Granted Jun 16, 2015·4 cites·33 claims
- 0766US11776806B2Multi-step pre-clean for selective metal gap fillAPPLIED MATERIALS INC·Filed 2022·Granted Oct 3, 2023·0 cites·17 claims
- 0864US8932959B2Method and system for etching plural layers on a workpiece including a lower layer containing an advanced memory materialAPPLIED MATERIALS INC·Filed 2013·Granted Jan 13, 2015·1 cites·17 claims
- 0963US11384428B2Carbon layer covered mask in 3D applicationsAPPLIED MATERIALS INC·Filed 2020·Granted Jul 12, 2022·0 cites·20 claims
- 1060US11145808B2Methods for etching a structure for MRAM applicationsAPPLIED MATERIALS INC·Filed 2019·Granted Oct 12, 2021·0 cites·19 claims
- 1159US2025253156A1Deposition and etching for selective removal of deposited dielectric film from tops of finsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1256US10490406B2Systems and methods for material breakthroughAPPLIED MATERIALS INC·Filed 2018·Granted Nov 26, 2019·0 cites·20 claims
- 1356US2024249936A1Methods for reducing micro and macro scalloping on semiconductor devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1456US2020043734A1Systems and methods for material breakthroughAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 1552US10957548B2Method of etching copper indium gallium selenide (CIGS) materialAPPLIED MATERIALS INC·Filed 2019·Granted Mar 23, 2021·0 cites·20 claims
- 1652US2025254969A1Control of silicon nitride topology at trench bottomAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 1751US2008054258A1Use of perylene diimide derivatives as air-stable n-channel organic semiconductorsBASF AG·Filed 2007·Application pending·0 cites
- 1849US2014248718A1Patterning of magnetic tunnel junction (mtj) film stacksKIM JISOO·Filed 2014·Application pending·0 cites
- 1948US2008090325A1Method for producing organic field-effect transistorsBASF AG·Filed 2006·Application pending·0 cites
- 2046US2015200042A1Recessing ultra-low k dielectric using remote plasma sourceAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 2145US2021066064A1Methods and apparatus for cleaning metal contactsAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 2245US2007259475A1Method for producing organic field-effect transistorsBASF AG·Filed 2007·Application pending·0 cites
- 2345US2009293907A1Method of substrate polymer removalFUNG NANCY·Filed 2008·Application pending·0 cites
- 2444US2008009092A1Use of chlorinated copper phthalocyanines as air-stable n-channel organic semiconductorsBASF AG·Filed 2006·Application pending·0 cites
- 2544US2014357083A1Directed block copolymer self-assembly patterns for advanced photolithography applicationsAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 2643US10354889B2Non-halogen etching of silicon-containing materialsAPPLIED MATERIALS INC·Filed 2017·Granted Jul 16, 2019·0 cites·20 claims
- 2743US2008134961A1Single-crystal organic semiconductor materials and approaches thereforBAO ZHENAN·Filed 2007·Application pending·0 cites
- 2841US2021234091A1Magnetic memory and method of fabricationAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 2936US2018025900A1Alkali metal and alkali earth metal reductionAPPLIED MATERIALS INC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →