Inventor · disambiguated record
Manoj Mehrotra
Also filed as: MEHROTRA MANOJ
54 granted patents·22 pending applications·700 citations·filing 1993–2023
98Inventor score
Files withTEXAS INSTRUMENTS INC59MEHROTRA MANOJ5QUALCOMM INC4UNIV NORTH CAROLINA STATE2KOHLI PUNEET1
Top patents by PatentIndex Score
76 records- 0198US5365102ASchottky barrier rectifier with MOS trenchUNIV NORTH CAROLINA STATE·Filed 1993·Granted Nov 15, 1994·326 cites·18 claims
- 0297US7960238B2Multiple indium implant methods and devices and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2008·Granted Jun 14, 2011·118 cites·19 claims
- 0390US7344929B2Method for manufacturing an integrated circuit using a capping layer having a degree of reflectivityTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 18, 2008·16 cites·24 claims
- 0485US6686300B2Sub-critical-dimension integrated circuit featuresTEXAS INSTRUMENTS INC·Filed 2001·Granted Feb 3, 2004·33 cites·13 claims
- 0584US7199020B2Nitridation of STI liner oxide for modulating inverse width effects in semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 3, 2007·12 cites·17 claims
- 0683US12272739B2Fin-based laterally-diffused metal-oxide semiconductor field effect transistorTEXAS INSTRUMENTS INC·Filed 2020·Granted Apr 8, 2025·1 cites·21 claims
- 0783US7736983B2High threshold NMOS source-drain formation with As, P and C to reduce damageTEXAS INSTRUMENTS INC·Filed 2008·Granted Jun 15, 2010·9 cites·20 claims
- 0881US6987061B2Dual salicide process for optimum performanceTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 17, 2006·28 cites·17 claims
- 0981US5493134ABidirectional AC switching device with MOS-gated turn-on and turn-off controlUNIV NORTH CAROLINA STATE·Filed 1994·Granted Feb 20, 1996·50 cites·37 claims
- 1080US7846783B2Use of poly resistor implant to dope poly gatesTEXAS INSTRUMENTS INC·Filed 2008·Granted Dec 7, 2010·8 cites·12 claims
- 1179US9000539B2Metal-gate MOS transistor and method of forming the transistor with reduced gate-to-source and gate-to-drain overlap capacitanceTEXAS INSTRUMENTS INC·Filed 2012·Granted Apr 7, 2015·4 cites·6 claims
- 1279US7510923B2Slim spacer implementation to improve drive currentTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 31, 2009·6 cites·17 claims
- 1376US8435848B2PMOS SiGe-last integration processMEHROTRA MANOJ·Filed 2011·Granted May 7, 2013·5 cites·19 claims
- 1472US12464744B2Low leakage Schottky diodeTEXAS INSTRUMENTS INC·Filed 2022·Granted Nov 4, 2025·0 cites·22 claims
- 1571US7615458B2Activation of CMOS source/drain extensions by ultra-high temperature annealsTEXAS INSTRUMENTS INC·Filed 2007·Granted Nov 10, 2009·3 cites·17 claims
- 1671US6258644B1Mixed voltage CMOS process for high reliability and high performance core and I/O transistors with reduced mask stepsTEXAS INSTRUMENTS INC·Filed 2000·Granted Jul 10, 2001·17 cites·22 claims
- 1769US2021225711A1High mobility transistorsTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 1867US9401365B2Epitaxial source/drain differential spacersTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 26, 2016·1 cites·19 claims
- 1966US9385117B2NPN heterojunction bipolar transistor in CMOS flowTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 5, 2016·1 cites·11 claims
- 2066US6677208B2Transistor with bottomwall/sidewall junction capacitance reduction region and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Jan 13, 2004·10 cites·8 claims
- 2165US7524777B2Method for manufacturing an isolation structure using an energy beam treatmentTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 28, 2009·3 cites·20 claims
- 2265US6482688B2Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gateTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 19, 2002·14 cites·28 claims
- 2365US6352900B1Controlled oxide growth over polysilicon gates for improved transistor characteristicsTEXAS INSTRUMENTS INC·Filed 2000·Granted Mar 5, 2002·12 cites·13 claims
- 2464US8691661B2Trench with reduced silicon lossMEHROTRA MANOJ·Filed 2011·Granted Apr 8, 2014·1 cites·13 claims
- 2563US7691700B2Multi-stage implant to improve device characteristicsTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 6, 2010·2 cites·17 claims
- 2663US2025142800A1Selective silicon-germanium process and structureTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2762US11532758B2Low leakage Schottky diodeTEXAS INSTRUMENTS INC·Filed 2019·Granted Dec 20, 2022·0 cites·21 claims
- 2862US10978353B2High mobility transistorsTEXAS INSTRUMENTS INC·Filed 2018·Granted Apr 13, 2021·0 cites·13 claims
- 2962US7670917B2Semiconductor device made by using a laser anneal to incorporate stress into a channel regionTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 2, 2010·1 cites·17 claims
- 3062US7611939B2Semiconductor device manufactured using a laminated stress layerTEXAS INSTRUMENTS INC·Filed 2007·Granted Nov 3, 2009·2 cites·15 claims
- 3162US6743705B2Transistor with improved source/drain extension dopant concentrationTEXAS INSTRUMENTS INC·Filed 2002·Granted Jun 1, 2004·10 cites·18 claims
- 3261US9915968B2Systems and methods for adaptive clock designQUALCOMM INC·Filed 2016·Granted Mar 13, 2018·1 cites·28 claims
- 3361US8617954B2Formation of nitrogen containing dielectric layers having an improved nitrogen distributionNIIMI HIROAKI·Filed 2007·Granted Dec 31, 2013·1 cites·12 claims
- 3460US7211481B2Method to strain NMOS devices while mitigating dopant diffusion for PMOS using a capped poly layerTEXAS INSTRUMENTS INC·Filed 2005·Granted May 1, 2007·2 cites·20 claims
- 3559US9496262B2High mobility transistorsTEXAS INSTRUMENTS INC·Filed 2014·Granted Nov 15, 2016·0 cites·8 claims
- 3658US2025081558A1Semiconductor device having a reduced height gate electrode layerTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 3758US2025006804A1Semiconductor device including an etch stop layer for contact hole formationTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 3857US10163725B2High mobility transistorsTEXAS INSTRUMENTS INC·Filed 2016·Granted Dec 25, 2018·0 cites·10 claims
- 3954US8906770B2Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structureTEXAS INSTRUMENTS INC·Filed 2013·Granted Dec 9, 2014·0 cites·7 claims
- 4053US2014175597A1Trench with reduced silicon lossTEXAS INSTRUMENTS INC·Filed 2014·Application pending·0 cites
- 4153US2009184348A1Slim Spacer Implementation to Improve Drive CurrentTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 4252US9397100B2Hybrid high-k first and high-k last replacement gate processTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 19, 2016·0 cites·5 claims
- 4352US9397182B2Transistor structure with silicided source and drain extensions and process for fabricationTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 19, 2016·0 cites·11 claims
- 4452US9324717B2High mobility transistorsTEXAS INSTRUMENTS INC·Filed 2014·Granted Apr 26, 2016·0 cites·8 claims
- 4551US11417646B2NPN heterojunction bipolar transistor in CMOS flowTEXAS INSTRUMENTS INC·Filed 2016·Granted Aug 16, 2022·0 cites·15 claims
- 4651US8592902B1Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structureTEXAS INSTRUMENTS INC·Filed 2012·Granted Nov 26, 2013·0 cites·13 claims
- 4750US10026839B2Epitaxial source/drain differential spacersTEXAS INSTRUMENTS INC·Filed 2016·Granted Jul 17, 2018·0 cites·14 claims
- 4849US9960162B2Hybrid high-k first and high-k last replacement gate processTEXAS INSTRUMENTS INC·Filed 2016·Granted May 1, 2018·0 cites·20 claims
- 4949US9805986B2High mobility transistorsTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 31, 2017·0 cites·14 claims
- 5049US6737325B1Method and system for forming a transistor having source and drain extensionsTEXAS INSTRUMENTS INC·Filed 2003·Granted May 18, 2004·2 cites·21 claims
Showing the top 50 of 76 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Manoj Mehrotra files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →