Inventor · disambiguated record
Masaki Momodomi
Also filed as: MOMODOMI MASAKI
58 granted patents·3,162 citations·filing 1984–2007
99Inventor score
Files withTOSHIBA KK58
Top patents by PatentIndex Score
58 records- 0199US4959812AElectrically erasable programmable read-only memory with NAND cell structureTOSHIBA KK·Filed 1988·Granted Sep 25, 1990·652 cites·15 claims
- 0297US4939690AElectrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variationTOSHIBA KK·Filed 1988·Granted Jul 3, 1990·142 cites·15 claims
- 0397US4630088AMOS dynamic ramTOSHIBA KK·Filed 1985·Granted Dec 16, 1986·139 cites·27 claims
- 0496US5361227ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1992·Granted Nov 1, 1994·103 cites·130 claims
- 0595US5293337AElectrically erasable programmable read-only memory with electric field decreasing controllerTOSHIBA KK·Filed 1991·Granted Mar 8, 1994·100 cites·13 claims
- 0693US7139201B2Non-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 2005·Granted Nov 21, 2006·24 cites·74 claims
- 0793US5615163ASemiconductor memory deviceTOSHIBA KK·Filed 1996·Granted Mar 25, 1997·97 cites·12 claims
- 0892US6151249ANAND-type EEPROM having bit lines and source lines commonly coupled through enhancement and depletion transistorsTOSHIBA KK·Filed 1994·Granted Nov 21, 2000·94 cites·16 claims
- 0992US5523980ASemiconductor memory deviceTOSHIBA KK·Filed 1994·Granted Jun 4, 1996·99 cites·10 claims
- 1092US5278794ANAND-cell type electrically erasable and programmable read-only memory with redundancy circuitTOSHIBA KK·Filed 1992·Granted Jan 11, 1994·92 cites·15 claims
- 1191US6172911B1Non-volatile semiconductor memory device with an improved verify voltage generatorTOSHIBA KK·Filed 1999·Granted Jan 9, 2001·54 cites·10 claims
- 1291US5831903AElectrically erasable programmable read-only memory with threshold value controller for data programming and method of programming the sameTOSHIBA KK·Filed 1997·Granted Nov 3, 1998·76 cites·19 claims
- 1391US5453955ANon-volatile semiconductor memory deviceTOSHIBA KK·Filed 1994·Granted Sep 26, 1995·86 cites·11 claims
- 1490USRE35838EElectrically erasable programmable read-only memory with NAND cell structureTOSHIBA KK·Filed 1995·Granted Jul 7, 1998·90 cites·16 claims
- 1590US5724300ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1997·Granted Mar 3, 1998·50 cites·44 claims
- 1689US5768195ASemiconductor memory deviceTOSHIBA KK·Filed 1997·Granted Jun 16, 1998·64 cites·32 claims
- 1788US5050125AElectrically erasable programmable read-only memory with NAND cellstructureTOSHIBA KK·Filed 1988·Granted Sep 17, 1991·60 cites·6 claims
- 1887US5615165ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1995·Granted Mar 25, 1997·43 cites·135 claims
- 1987US5528547AElectrically erasable programmable read-only memory with electric field decreasing controllerTOSHIBA KK·Filed 1994·Granted Jun 18, 1996·52 cites·17 claims
- 2086US5546351ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1994·Granted Aug 13, 1996·65 cites·29 claims
- 2186US5075890AElectrically erasable programmable read-only memory with nand cellTOSHIBA KK·Filed 1990·Granted Dec 24, 1991·62 cites·18 claims
- 2286US5043942ANand cell type programmable read-only memory with common control gate driver circuitTOSHIBA KK·Filed 1990·Granted Aug 27, 1991·58 cites·14 claims
- 2384US6967892B2Non-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 2004·Granted Nov 22, 2005·27 cites·102 claims
- 2484US5508957ANon-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-throughTOSHIBA KK·Filed 1994·Granted Apr 16, 1996·56 cites·6 claims
- 2584US5280454AElectrically erasable programmable read-only memory with block-erase functionTOSHIBA KK·Filed 1991·Granted Jan 18, 1994·54 cites·37 claims
- 2683US7248493B2Memory system having improved random write performanceTOSHIBA KK·Filed 2006·Granted Jul 24, 2007·15 cites·18 claims
- 2783US6781895B1Non-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 2000·Granted Aug 24, 2004·27 cites·9 claims
- 2881US5379256AElectrically erasable programmable read-only memory with write/verify controllerTOSHIBA KK·Filed 1994·Granted Jan 3, 1995·41 cites·20 claims
- 2980US5793696ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1997·Granted Aug 11, 1998·27 cites·13 claims
- 3080US5657270AElectrically erasable programmable read-only memory with threshold value controller for data programmingTOSHIBA KK·Filed 1995·Granted Aug 12, 1997·36 cites·54 claims
- 3180US5517457ASemiconductor memory deviceTOSHIBA KK·Filed 1994·Granted May 14, 1996·37 cites·27 claims
- 3280US4996669AElectrically erasable programmable read-only memory with NAND memory cell structureTOSHIBA KK·Filed 1990·Granted Feb 26, 1991·47 cites·20 claims
- 3379US5909399ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1998·Granted Jun 1, 1999·26 cites·22 claims
- 3478US5818791ANon-volatile semiconductor memory device and memory system using the sameTOSHIBA KK·Filed 1997·Granted Oct 6, 1998·24 cites·5 claims
- 3577US4799193ASemiconductor memory devicesTOSHIBA KK·Filed 1986·Granted Jan 17, 1989·33 cites·33 claims
- 3675US5740112ASense amplifier for use in an EEPROMTOSHIBA KK·Filed 1996·Granted Apr 14, 1998·34 cites·17 claims
- 3775US5402373AElectrically erasable programmable read-only memory with electric field decreasing controllerTOSHIBA KK·Filed 1994·Granted Mar 28, 1995·29 cites·15 claims
- 3875US5088060AElectrically erasable programmable read-only memory with NAND memory cell structureTOSHIBA KK·Filed 1990·Granted Feb 11, 1992·37 cites·21 claims
- 3974US5978265ANon-volatile semiconductor memory device with nand type memory cell arraysTOSHIBA KK·Filed 1991·Granted Nov 2, 1999·35 cites·34 claims
- 4074US5247480AElectrically erasable progammable read-only memory with nand cell blocksTOSHIBA KK·Filed 1991·Granted Sep 21, 1993·34 cites·11 claims
- 4172US5179427ANon-volatile semiconductor memory device with voltage stabilizing electrodeTOSHIBA KK·Filed 1992·Granted Jan 12, 1993·32 cites·29 claims
- 4270US6081454AElectrically erasable programmable read-only memory with threshold value controller for data programmingTOSHIBA KK·Filed 1998·Granted Jun 27, 2000·23 cites·8 claims
- 4368US4697101ARead/write control circuitTOSHIBA KK·Filed 1984·Granted Sep 29, 1987·17 cites·14 claims
- 4467US7719106B2Semiconductor device, electronic card and pad rearrangement substrateTOSHIBA KK·Filed 2007·Granted May 18, 2010·2 cites·10 claims
- 4565US5253206AElectrically erasable programmable read-only memory with threshold value measurement circuitTOSHIBA KK·Filed 1991·Granted Oct 12, 1993·44 cites·12 claims
- 4664US7268424B2Semiconductor device, electronic card and pad rearrangement substrateTOSHIBA KK·Filed 2004·Granted Sep 11, 2007·8 cites·18 claims
- 4763US5400279ANonvolatile semiconductor memory device with NAND cell structureTOSHIBA KK·Filed 1993·Granted Mar 21, 1995·24 cites·16 claims
- 4860US4630087ANonvolatile semiconductor memory deviceTOSHIBA KK·Filed 1984·Granted Dec 16, 1986·15 cites·5 claims
- 4957US7095102B2Pad rearrangement substrateTOSHIBA KK·Filed 2002·Granted Aug 22, 2006·5 cites·16 claims
- 5055US5440509AElectrically erasable programmable read-only memory with NAND cell structure and intermediate level voltages initially applied to bit linesTOSHIBA KK·Filed 1993·Granted Aug 8, 1995·17 cites·17 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →