Inventor · disambiguated record
Masaharu Nagai
Also filed as: NAGAI MASAHARU
43 granted patents·2 pending applications·427 citations·filing 1995–2019
98Inventor score
Top patents by PatentIndex Score
45 records- 0197US9691905B2Semiconductor device, manufacturing method thereof, and electronic deviceSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Jun 27, 2017·19 cites·9 claims
- 0297US7579220B2Semiconductor device manufacturing methodSEMICONDUCTOR ENERGY LAB·Filed 2006·Granted Aug 25, 2009·53 cites·24 claims
- 0395US7608490B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2006·Granted Oct 27, 2009·30 cites·14 claims
- 0494US10141452B2Semiconductor device, manufacturing method thereof, and electronic deviceSEMICONDUCTOR ENERGY LAB·Filed 2018·Granted Nov 27, 2018·7 cites·12 claims
- 0594US9871145B2Semiconductor device, manufacturing method thereof, and electronic deviceSEMICONDUCTOR ENERGY LAB·Filed 2017·Granted Jan 16, 2018·7 cites·9 claims
- 0693US10903402B2Display device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2019·Granted Jan 26, 2021·3 cites·16 claims
- 0793US9472656B2Semiconductor device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2015·Granted Oct 18, 2016·8 cites·15 claims
- 0892US8723417B2Display device and method for manufacturing the sameTSUCHIYA KAORU·Filed 2011·Granted May 13, 2014·8 cites·22 claims
- 0991US9923127B2Display device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2014·Granted Mar 20, 2018·6 cites·18 claims
- 1091US8168481B2Method of manufacturing SOI substrateHANAOKA KAZUYA·Filed 2010·Granted May 1, 2012·14 cites·13 claims
- 1190US8034674B2Semiconductor device, method for manufacturing semiconductor device, and electronic applianceSEMICONDUCTOR ENERGY LAB·Filed 2008·Granted Oct 11, 2011·15 cites·21 claims
- 1290US7446336B2Electronics device, semiconductor device, and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2004·Granted Nov 4, 2008·44 cites·40 claims
- 1389US9142679B2Method for manufacturing semiconductor device using oxide semiconductorSEMICONDUCTOR ENERGY LAB·Filed 2012·Granted Sep 22, 2015·9 cites·17 claims
- 1488US8455873B2Electronics device, semiconductor device, and method for manufacturing the sameYAMAZAKI SHUNPEI·Filed 2011·Granted Jun 4, 2013·5 cites·18 claims
- 1588US7960733B2Electronics device, semiconductor device, and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2008·Granted Jun 14, 2011·7 cites·11 claims
- 1687US10367124B2Display device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2018·Granted Jul 30, 2019·3 cites·13 claims
- 1785US7737449B2Light emitting device and method of manufacturing thereofSEMICONDUCTOR ENERGY LAB·Filed 2007·Granted Jun 15, 2010·7 cites·34 claims
- 1884US8044574B2Display device and manufacturing method of display deviceSEMICONDUCTOR ENERGY LAB·Filed 2009·Granted Oct 25, 2011·8 cites·30 claims
- 1984US7465593B2Electronics device, semiconductor device, and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2008·Granted Dec 16, 2008·5 cites·20 claims
- 2081US7928654B2Display device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2004·Granted Apr 19, 2011·20 cites·21 claims
- 2181US7914971B2Light exposure mask and method for manufacturing semiconductor device using the sameSEMICONDUCTOR ENERGY LAB·Filed 2006·Granted Mar 29, 2011·6 cites·12 claims
- 2280US8362693B2Display device and manufacturing method of display deviceSEMICONDUCTOR ENERGY LAB·Filed 2011·Granted Jan 29, 2013·4 cites·36 claims
- 2377US7829432B2Method for manufacturing SOI substrateSEMICONDUCTOR ENERGY LAB·Filed 2009·Granted Nov 9, 2010·6 cites·11 claims
- 2476US7947538B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2009·Granted May 24, 2011·5 cites·33 claims
- 2575US7306978B2Light emitting device and method of manufacturing thereofSEMICONDUCTOR ENERGY LAB·Filed 2004·Granted Dec 11, 2007·18 cites·34 claims
- 2674US7816863B2Light emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2004·Granted Oct 19, 2010·13 cites·14 claims
- 2771US8283862B2Light emitting device and method for manufacturing the sameYAMAZAKI SHUNPEI·Filed 2010·Granted Oct 9, 2012·2 cites·16 claims
- 2871US7344825B2Method of fabricating semiconductor device, and developing apparatus using the methodSEMICONDUCTOR ENERGY LAB·Filed 2003·Granted Mar 18, 2008·11 cites·21 claims
- 2964US7799515B2Method of fabricating semiconductor device, and developing apparatus using the methodSEMICONDUCTOR ENERGY LAB·Filed 2008·Granted Sep 21, 2010·1 cites·13 claims
- 3063US7520790B2Display device and manufacturing method of display deviceSEMICONDUCTOR ENERGY LAB·Filed 2004·Granted Apr 21, 2009·8 cites·28 claims
- 3151US6024794ADetermination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determinationSONY CORP·Filed 1997·Granted Feb 15, 2000·13 cites·11 claims
- 3251US5665977ASemiconductor light emitting device with defect decomposing and blocking layersSONY CORP·Filed 1996·Granted Sep 9, 1997·14 cites·6 claims
- 3349US8486772B2Method of manufacturing SOI substrateHANAOKA KAZUYA·Filed 2012·Granted Jul 16, 2013·0 cites·22 claims
- 3448US8198173B2Method for manufacturing SOI substrateOHNUMA HIDETO·Filed 2010·Granted Jun 12, 2012·0 cites·24 claims
- 3548US7875419B2Method for removing resist pattern and method for manufacturing semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2003·Granted Jan 25, 2011·4 cites·8 claims
- 3648US2011170084A1Light exposure mask and method for manufacturing semiconductor device using the sameSEMICONDUCTOR ENERGY LAB·Filed 2011·Application pending·0 cites
- 3746US6456639B2Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including sameSONY CORP·Filed 2001·Granted Sep 24, 2002·1 cites·5 claims
- 3845US5695556ADetermination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determinationSONY CORP·Filed 1995·Granted Dec 9, 1997·9 cites·7 claims
- 3943US8426945B2Semiconductor device, method for manufacturing semiconductor device, and electronic applianceNAGAI MASAHARU·Filed 2011·Granted Apr 23, 2013·0 cites·10 claims
- 4042US5828086ASemiconductor light emitting device with a Mg superlattice structureSONY CORP·Filed 1997·Granted Oct 27, 1998·8 cites·6 claims
- 4140US6069020AMethod of manufacturing semiconductor light-emitting deviceSONY CORP·Filed 1998·Granted May 30, 2000·9 cites·9 claims
- 4239US6414975B1Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing same, and optical device including sameSONY CORP·Filed 1998·Granted Jul 2, 2002·6 cites·12 claims
- 4336US6020601ASemiconductor light-emitting deviceSONY CORP·Filed 1998·Granted Feb 1, 2000·7 cites·3 claims
- 4434US5865897AMethod of producing film of nitrogen-doped II-VI group compound semiconductorSONY CORP·Filed 1995·Granted Feb 2, 1999·4 cites·7 claims
- 4534US2012211862A1Soi substrate and method for manufacturing soi substrateNAGAI MASAHARU·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →