Inventor · disambiguated record
Masashi Nakabayashi
Also filed as: NAKABAYASHI MASASHI
21 granted patents·3 pending applications·49 citations·filing 2001–2018
92Inventor score
Files withNAKABAYASHI MASASHI6NIPPON STEEL CORP5SHOWA DENKO KK4AIGO TAKASHI3NIPPON STEEL & SUMIKIN MAT CO3
Top patents by PatentIndex Score
24 records- 0189US11078596B2Method for evaluating quality of SiC single crystal body and method for producing silicon carbide single crystal ingot using the sameSHOWA DENKO KK·Filed 2018·Granted Aug 3, 2021·4 cites·9 claims
- 0285US7972704B2Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefromNIPPON STEEL CORP·Filed 2009·Granted Jul 5, 2011·10 cites·11 claims
- 0382US10202706B2Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingotNIPPON STEEL & SUMIKIN MAT CO·Filed 2014·Granted Feb 12, 2019·2 cites·10 claims
- 0477US10711369B2Method for producing silicon carbide single crystal and silicon carbide single crystal substrateSHOWA DENKO KK·Filed 2015·Granted Jul 14, 2020·1 cites·4 claims
- 0577US8901570B2Epitaxial silicon carbide single crystal substrate and process for producing the sameAIGO TAKASHI·Filed 2011·Granted Dec 2, 2014·5 cites·2 claims
- 0677US8673254B2Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the sameNAKABAYASHI MASASHI·Filed 2011·Granted Mar 18, 2014·3 cites·6 claims
- 0774US9068277B2Apparatus for manufacturing single-crystal silicon carbideNAKABAYASHI MASASHI·Filed 2009·Granted Jun 30, 2015·2 cites·8 claims
- 0871US10031089B2Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline waferNIPPON STEEL & SUMIKIN MAT CO·Filed 2014·Granted Jul 24, 2018·3 cites·4 claims
- 0967US6953538B2Electroconductive low thermal expansion ceramic sintered bodyNIPPON STEEL CORP·Filed 2001·Granted Oct 11, 2005·9 cites·4 claims
- 1066US9777403B2Single-crystal silicon carbide and single-crystal silicon carbide waferNAKABAYASHI MASASHI·Filed 2009·Granted Oct 3, 2017·2 cites·11 claims
- 1165US9915011B2Low resistivity single crystal silicon carbide waferFUJIMOTO TATSUO·Filed 2009·Granted Mar 13, 2018·1 cites·14 claims
- 1264US9691607B2Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the sameAIGO TAKASHI·Filed 2011·Granted Jun 27, 2017·2 cites·2 claims
- 1362US8795624B2Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the sameNAKABAYASHI MASASHI·Filed 2005·Granted Aug 5, 2014·1 cites·9 claims
- 1462US8491719B2Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of sameNAKABAYASHI MASASHI·Filed 2009·Granted Jul 23, 2013·0 cites·8 claims
- 1561US8936680B2Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and methodKATSUNO MASAKAZU·Filed 2010·Granted Jan 20, 2015·2 cites·6 claims
- 1655US7794842B2Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of sameNIPPON STEEL CORP·Filed 2004·Granted Sep 14, 2010·2 cites·20 claims
- 1753US7799305B2Silicon carbide single crystal and single crystal waferNIPPON STEEL CORP·Filed 2005·Granted Sep 21, 2010·0 cites·11 claims
- 1853US2015075422A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Application pending·0 cites
- 1952US8044408B2SiC single-crystal substrate and method of producing SiC single-crystal substrateNIPPON STEEL CORP·Filed 2009·Granted Oct 25, 2011·0 cites·9 claims
- 2049US8178389B2Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the sameNAKABAYASHI MASASHI·Filed 2010·Granted May 15, 2012·0 cites·13 claims
- 2144US10048142B2Evaluation method for bulk silicon carbide single crystals and reference silicon carbide single crystal used in said methodNIPPON STEEL & SUMIKIN MAT CO·Filed 2014·Granted Aug 14, 2018·0 cites·19 claims
- 2244US2018282902A1Sic single crystal ingotSHOWA DENKO KK·Filed 2016·Application pending·0 cites
- 2342US2011278596A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameAIGO TAKASHI·Filed 2010·Application pending·0 cites
- 2435US10526722B2Method for manufacturing silicon carbide single crystalSHOWA DENKO KK·Filed 2016·Granted Jan 7, 2020·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →