Inventor · disambiguated record
Mahadeva Iyer Natarajan
Also filed as: NATARAJAN MAHADEVA IYER
34 granted patents·3 pending applications·68 citations·filing 2012–2019
95Inventor score
Files withGLOBALFOUNDRIES INC25LAI DA-WEI6GLOBALFOUNDRIES SG PTE LTD2PRABHU MANJUNATHA2GLOBALFOUNDRIES US INC1
Top patents by PatentIndex Score
37 records- 0195US9385527B2Enhanced charge device model clampGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·8 cites·20 claims
- 0294US10083952B2Diode-triggered schottky silicon-controlled rectifier for Fin-FET electrostatic discharge controlGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 25, 2018·9 cites·16 claims
- 0390US9177951B2Three-dimensional electrostatic discharge semiconductor deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 3, 2015·7 cites·12 claims
- 0488US9679888B1ESD device for a semiconductor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·6 cites·20 claims
- 0585US10211168B1Dissipation of static charge from wiring layers during manufacturingGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 19, 2019·6 cites·20 claims
- 0683US9030791B2Enhanced charge device model clampGLOBALFOUNDRIES INC·Filed 2013·Granted May 12, 2015·4 cites·20 claims
- 0782US8908341B2Power clamp for high voltage integrated circuitsPRABHU MANJUNATHA·Filed 2012·Granted Dec 9, 2014·7 cites·6 claims
- 0879US9741849B1Integrated circuits resistant to electrostatic discharge and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Aug 22, 2017·3 cites·17 claims
- 0977US10115718B2Method, apparatus, and system for metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic discharge (ESD) protectionGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 30, 2018·2 cites·20 claims
- 1074US8786990B2Driver-based distributed multi-path ESD schemePRABHU MANJUNATHA·Filed 2012·Granted Jul 22, 2014·5 cites·15 claims
- 1173US10373946B2Diode-triggered Schottky silicon-controlled rectifier for Fin-FET electrostatic discharge controlGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·1 cites·11 claims
- 1271US9455316B2Three-dimensional electrostatic discharge semiconductor deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 27, 2016·1 cites·6 claims
- 1370US9620587B2Three-dimensional electrostatic discharge semiconductor deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 11, 2017·1 cites·7 claims
- 1469US9653454B1Methods for an ESD protection circuit including trigger-voltage tunable cascode transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted May 16, 2017·1 cites·17 claims
- 1566US8913357B2ESD protection circuitLAI DA-WEI·Filed 2012·Granted Dec 16, 2014·2 cites·16 claims
- 1664US9059582B2False-triggered immunity and reliability-free ESD protection deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Jun 16, 2015·1 cites·20 claims
- 1762US8964341B2Gate dielectric protectionPRABHU MANJUNATHA GOVINDA·Filed 2012·Granted Feb 24, 2015·3 cites·20 claims
- 1861US8778743B2Latch-up robust PNP-triggered SCR-based devicesLAI DA-WEI·Filed 2012·Granted Jul 15, 2014·1 cites·20 claims
- 1960US10833012B2Transistor structures having electrically floating metal layers between active metal linesGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 2057US10790276B2Methods, apparatus, and system for metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic discharge (ESD) protectionGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 29, 2020·0 cites·18 claims
- 2154US10741542B2Transistors patterned with electrostatic discharge protection and methods of fabricationGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 11, 2020·0 cites·7 claims
- 2254US10403622B2Electrostatic discharge protection device and methodsGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 3, 2019·0 cites·20 claims
- 2353US10510663B2Transistor structures having electrically floating metal layer between active metal linesGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 17, 2019·0 cites·17 claims
- 2453US10147715B2Methods for an ESD protection circuit including trigger-voltage tunable cascode transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 4, 2018·0 cites·5 claims
- 2553US9349718B2ESD snapback based clamp for finFETGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·0 cites·20 claims
- 2652US9601486B2ESD snapback based clamp for finFETGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 21, 2017·0 cites·20 claims
- 2750US9343590B2Planar semiconductor ESD device and method of making sameGLOBALFOUNDRIES INC·Filed 2014·Granted May 17, 2016·0 cites·15 claims
- 2848US10068895B2Transistors patterned with electrostatic discharge protection and methods of fabricationGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 4, 2018·0 cites·12 claims
- 2947US8724271B2ESD-robust I/O driver circuitsLAI DA-WEI·Filed 2012·Granted May 13, 2014·0 cites·18 claims
- 3043US2016064371A1Non-planar esd device for non-planar output transistor and common fabrication thereofGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 3141US9154122B2Latch up detectionLAI DA-WEI·Filed 2012·Granted Oct 6, 2015·0 cites·15 claims
- 3241US8879221B2ESD protection without latch-upLAI DA-WEI·Filed 2012·Granted Nov 4, 2014·0 cites·20 claims
- 3340US8913358B2Latch-up immune ESD protectionLAI DA-WEI·Filed 2012·Granted Dec 16, 2014·0 cites·20 claims
- 3437US10964687B2FinFET ESD device with Schottky diodeGLOBALFOUNDRIES US INC·Filed 2017·Granted Mar 30, 2021·0 cites·20 claims
- 3537US2015228555A1Structure and method of cancelling tsv-induced substrate stressGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 3637US2018083441A1Method, apparatus, and system for a semiconductor device having novel electrostatic discharge (esd) protection scheme and circuitGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3735US9831236B2Electrostatic discharge (ESD) protection transistor devices and integrated circuits with electrostatic discharge protection transistor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 28, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →