Inventor · disambiguated record
Mario Giuseppe Saggio
Also filed as: SAGGIO MARIO · SAGGIO MARIO GIUSEPPE
63 granted patents·30 pending applications·160 citations·filing 2000–2025
98Inventor score
Files withST MICROELECTRONICS SRL73ST MICROELECTRONICS INT NV10FRISINA FERRUCCIO3GUARNERA ALFIO3LORENTI SIMONA2
Top patents by PatentIndex Score
93 records- 0192US11316025B2Silicon carbide-based electronic device and method of manufacturing the sameST MICROELECTRONICS SRL·Filed 2020·Granted Apr 26, 2022·4 cites·20 claims
- 0291US11798981B24H—SiC electronic device with improved short-circuit performances, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2021·Granted Oct 24, 2023·2 cites·18 claims
- 0388US9748411B2Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2016·Granted Aug 29, 2017·4 cites·20 claims
- 0486US8653590B2Vertical-conduction integrated electronic device and method for manufacturing thereofFRISINA FERRUCCIO·Filed 2011·Granted Feb 18, 2014·7 cites·34 claims
- 0585US8921211B2Vertical-conduction integrated electronic device and method for manufacturing thereofST MICROELECTRONICS SRL·Filed 2014·Granted Dec 30, 2014·5 cites·6 claims
- 0684US11869944B2Scalable MPS device based on SiCST MICROELECTRONICS SRL·Filed 2021·Granted Jan 9, 2024·1 cites·17 claims
- 0783US6451672B1Method for manufacturing electronic devices in semiconductor substrates provided with gettering sitesST MICROELECTRONICS SRL·Filed 2000·Granted Sep 17, 2002·43 cites·14 claims
- 0882US12308235B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2023·Granted May 20, 2025·0 cites·17 claims
- 0981US2024243122A1Mosfet device of silicon carbide having an integrated diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 1079US11495508B2Silicon carbide power device with improved robustness and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2020·Granted Nov 8, 2022·1 cites·18 claims
- 1179US6841836B2Integrated device with Schottky diode and MOS transistor and related manufacturing processST MICROELECTRONICS SRL·Filed 2003·Granted Jan 11, 2005·22 cites·7 claims
- 1278US11854809B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2022·Granted Dec 26, 2023·0 cites·18 claims
- 1378US2025151322A1Mosfet device with shielding region and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 1477US11916066B2MOSFET device of silicon carbide having an integrated diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2022·Granted Feb 27, 2024·0 cites·16 claims
- 1576US11018008B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2018·Granted May 25, 2021·1 cites·20 claims
- 1676US8455956B2Multi-drain semiconductor power device and edge-termination structure thereofSAGGIO MARIO GIUSEPPE·Filed 2009·Granted Jun 4, 2013·7 cites·22 claims
- 1776US2025038060A1Silicon carbide power device with improved robustness and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 1874US12342582B24H-SiC electronic device with improved short-circuit performances, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2023·Granted Jun 24, 2025·0 cites·9 claims
- 1974US12224321B2Scalable MPS device based on SiCST MICROELECTRONICS SRL·Filed 2023·Granted Feb 11, 2025·0 cites·18 claims
- 2074US8901652B2Power MOSFET comprising a plurality of columnar structures defining the charge balancing regionSAGGIO MARIO GIUSEPPE·Filed 2010·Granted Dec 2, 2014·5 cites·32 claims
- 2173US12125762B2Silicon carbide power device with improved robustness and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2022·Granted Oct 22, 2024·0 cites·18 claims
- 2273US11251296B2MOSFET device with shielding region and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2019·Granted Feb 15, 2022·1 cites·20 claims
- 2373US7713853B2Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devicesST MICROELECTRONICS SRL·Filed 2008·Granted May 11, 2010·4 cites·13 claims
- 2473US2025280573A14h-sic electronic device with improved short-circuit performances, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 2573US2025015155A1Silicon carbide-based electronic device and method of manufacturing the sameST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 2672US9099322B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceLORENTI SIMONA·Filed 2012·Granted Aug 4, 2015·2 cites·10 claims
- 2771US11545362B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 2871US7700970B2Integrated power device having a start-up structureST MICROELECTRONICS SRL·Filed 2006·Granted Apr 20, 2010·8 cites·20 claims
- 2970US11270993B2MOSFET device of silicon carbide having an integrated diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 3070US9018635B2Integrated electronic device with edge-termination structure and manufacturing method thereofFRISINA FERRUCCIO·Filed 2011·Granted Apr 28, 2015·2 cites·20 claims
- 3170US7838927B2Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding deviceST MICROELECTRONICS SRL·Filed 2008·Granted Nov 23, 2010·4 cites·20 claims
- 3269US12148824B2MOSFET device with shielding region and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2022·Granted Nov 19, 2024·0 cites·19 claims
- 3369US11177394B2Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2020·Granted Nov 16, 2021·0 cites·21 claims
- 3468US12334346B2Method for manufacturing a SiC electronic device with reduced handling steps, and sic electronic deviceST MICROELECTRONICS SRL·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 3568US7871880B2Method for manufacturing electronic devices integrated in a semiconductor substrate and corresponding devicesST MICROELECTRONICS SRL·Filed 2008·Granted Jan 18, 2011·3 cites·21 claims
- 3668US2025241036A1Scalable mps device based on sicST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 3767US8455318B2Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor deviceGUARNERA ALFIO·Filed 2006·Granted Jun 4, 2013·2 cites·35 claims
- 3867US7790520B2Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power deviceST MICROELECTRONICS SRL·Filed 2009·Granted Sep 7, 2010·2 cites·14 claims
- 3967US2022344467A14h-sic mosfet device and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 4066US12051731B2Silicon carbide-based electronic device and method of manufacturing the sameST MICROELECTRONICS SRL·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 4166US2025176235A1Ohmic contact formation in a sic-based electronic deviceST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 4265US12094985B2Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2022·Granted Sep 17, 2024·0 cites·18 claims
- 4365US8012832B2Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding deviceST MICROELECTRONICS SRL·Filed 2008·Granted Sep 6, 2011·3 cites·24 claims
- 4464US9627472B2Semiconductor structure with varying doping profile and related ICS and devicesST MICROELECTRONICS SRL·Filed 2015·Granted Apr 18, 2017·1 cites·32 claims
- 4564US8344449B2Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtainedST MICROELECTRONICS SRL·Filed 2009·Granted Jan 1, 2013·2 cites·26 claims
- 4664US6709955B2Method of fabricating electronic devices integrated in semiconductor substrates provided with gettering sites, and a device fabricated by the methodST MICROELECTRONICS SRL·Filed 2001·Granted Mar 23, 2004·13 cites·11 claims
- 4763US10651319B2Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2019·Granted May 12, 2020·0 cites·19 claims
- 4862US10707202B2MOSFET device of silicon carbide having an integrated diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2018·Granted Jul 7, 2020·0 cites·16 claims
- 4962US8304311B2Process for manufacturing a semiconductor power device comprising charge-balance column structures and respective deviceLORENTI SIMONA·Filed 2006·Granted Nov 6, 2012·1 cites·34 claims
- 5062US2025043460A1Manufacturing process for silicon carbide power devices with variable dopant concentrationST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
Showing the top 50 of 93 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →