Inventor · disambiguated record
Masahiro Sakurada
Also filed as: SAKURADA MASAHIRO
30 granted patents·3 pending applications·443 citations·filing 1995–2018
97Inventor score
Top patents by PatentIndex Score
33 records- 0190US5704973AApparatus and method for the uniform distribution of crystal defects upon a silicon single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Jan 6, 1998·68 cites·7 claims
- 0289US5667584AMethod for the preparation of a single crystal of silicon with decreased crystal defectsSHINETSU HANDOTAI KK·Filed 1995·Granted Sep 16, 1997·64 cites·1 claims
- 0387US9938634B2Method of producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2014·Granted Apr 10, 2018·3 cites·3 claims
- 0487US6913646B2Silicon single crystal wafer and method for producing silicon single crystalSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 5, 2005·24 cites·10 claims
- 0587US5728211ASilicon single crystal with low defect density and method of producing sameSHINETSU HANDOTAI KK·Filed 1996·Granted Mar 17, 1998·57 cites·8 claims
- 0684US6893499B2Silicon single crystal wafer and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2001·Granted May 17, 2005·21 cites·11 claims
- 0781US7258744B2Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Aug 21, 2007·24 cites·58 claims
- 0880US6190452B1Silicon single crystal wafer and method for producing itSHINETSU HANDOTAI KK·Filed 1999·Granted Feb 20, 2001·32 cites·16 claims
- 0979US6482260B2Silicon single crystal wafer and a method for producing itSHINETSU HANDOTAI KK·Filed 2000·Granted Nov 19, 2002·13 cites·4 claims
- 1078US6565822B1Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted May 20, 2003·13 cites·19 claims
- 1173US7226507B2Method for producing single crystal and single crystalSHINETSU HANDOTAI KK·Filed 2004·Granted Jun 5, 2007·9 cites·9 claims
- 1270US8147611B2Method of manufacturing single crystalSAKURADA MASAHIRO·Filed 2006·Granted Apr 3, 2012·2 cites·18 claims
- 1369US7311888B2Annealed wafer and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 2003·Granted Dec 25, 2007·11 cites·24 claims
- 1465US10355092B2Silicon epitaxial wafer and method of producing silicon epitaxial waferSHINETSU HANDOTAI KK·Filed 2014·Granted Jul 16, 2019·1 cites·6 claims
- 1565US7294196B2Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Nov 13, 2007·9 cites·16 claims
- 1665US5730800AFused silica glass crucibleSHINETSU HANDOTAI KK·Filed 1996·Granted Mar 24, 1998·17 cites·1 claims
- 1764US9425345B2Epitaxial wafer and manufacturing method thereofSHINETSU HANDOTAI KK·Filed 2012·Granted Aug 23, 2016·1 cites·19 claims
- 1861US7323048B2Method for producing a single crystal and a single crystalSHINETSU HANDOTAI KK·Filed 2004·Granted Jan 29, 2008·4 cites·40 claims
- 1959US7129123B2SOI wafer and a method for producing an SOI waferSHINETSU HANDOTAI KK·Filed 2003·Granted Oct 31, 2006·8 cites·13 claims
- 2056US7214268B2Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2003·Granted May 8, 2007·4 cites·14 claims
- 2155US7518187B2Soi wafer and a method for producing the sameSHINETSU HANDOTAI KK·Filed 2004·Granted Apr 14, 2009·6 cites·26 claims
- 2253US6174364B1Method for producing silicon monocrystal and silicon monocrystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Jan 16, 2001·12 cites·20 claims
- 2349US6071337AApparatus and method for producing crystals by the czochralski method and crystals produced by this methodSHINETSU HANDOTAI KK·Filed 1997·Granted Jun 6, 2000·9 cites·10 claims
- 2447US7407866B2Soi wafer and a method for producing the sameSHINETSU HANDOTAI KK·Filed 2004·Granted Aug 5, 2008·2 cites·6 claims
- 2546US2010139549A1Quartz Glass Crucible for Pulling Silicon Single Crystal and Method of Manufacturing Quartz Glass Crucible for Pulling Silicon Single CrystalSHINETSU HANDOTAI KK·Filed 2006·Application pending·0 cites
- 2645US5938842AMethod for producing a single crystal using czochralski techniqueSHINETSU HANDOTAI KK·Filed 1998·Granted Aug 17, 1999·8 cites·28 claims
- 2745US2008035050A1An Apparatus for Producing a Single CrystalSHINETSU HANDOTAI KK·Filed 2005·Application pending·0 cites
- 2843US7384477B2Method for producing a single crystal and a single crystalSHINETSU HANDOTAI KK·Filed 2004·Granted Jun 10, 2008·0 cites·18 claims
- 2943US5609682AMethod for the preparation of silicon single crystalSHINETSU HANDOTAI KK·Filed 1995·Granted Mar 11, 1997·6 cites·3 claims
- 3042US11486833B2Method for evaluating edge shape of silicon wafer, apparatus for evaluating thereof, silicon wafer, method for selecting and method for manufacturing thereofSHINETSU HANDOTAI KK·Filed 2018·Granted Nov 1, 2022·0 cites·10 claims
- 3142US5948163AApparatus for manufacturing crystals according to the Czochralski method, and crystals manufactured by the manufacturing methodSHINETSU HANDOTAI KK·Filed 1997·Granted Sep 7, 1999·8 cites·20 claims
- 3242US5817171AApparatus and method for producing single crystal using Czochralski techniqueSHINETSU HANDOTAI KK·Filed 1996·Granted Oct 6, 1998·7 cites·16 claims
- 3333US2017253995A1Method for heat-treating silicon single crystal waferSHINETSU HANDOTAI KK·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →