Inventor · disambiguated record
Masatomo Sumiya
Also filed as: SUMIYA MASATOMO
7 granted patents·3 pending applications·80 citations·filing 1993–2014
83Inventor score
Files withJAPAN SCIENCE & TECH AGENCY2NIHASHI TOKUAKI2HAMAMATSU PHOTONICS KK1MATSUKI NOBUYUKI1NAT INST FOR MATERIALS SCIENCE1
Top patents by PatentIndex Score
10 records- 0179US8888914B2Process for producing layered member and layered memberNIHASHI TOKUAKI·Filed 2010·Granted Nov 18, 2014·6 cites·11 claims
- 0278US5569502AFilm formation apparatus and method for forming a filmSEMICONDUCTOR ENERGY LAB·Filed 1993·Granted Oct 29, 1996·41 cites·20 claims
- 0376US7525131B2Photoelectric surface and photodetectorUNIV SHIZUOKA NAT UNIV CORP·Filed 2006·Granted Apr 28, 2009·4 cites·10 claims
- 0459US9431570B2Process for producing layered member and layered memberHAMAMATSU PHOTONICS KK·Filed 2014·Granted Aug 30, 2016·0 cites·11 claims
- 0556US6239005B1Method of forming epitaxially grown semiconductor layer on metal layer and light emitting semiconductor device comprising said semiconductor layerSHIZUOKA UNIVERSITY·Filed 1999·Granted May 29, 2001·26 cites·16 claims
- 0655US7820246B2Method for growing thin nitride film onto substrate and thin nitride film deviceJAPAN SCIENCE & TECH AGENCY·Filed 2004·Granted Oct 26, 2010·3 cites·5 claims
- 0749US8377211B2Device for vacuum processingNAT INST FOR MATERIALS SCIENCE·Filed 2007·Granted Feb 19, 2013·0 cites·2 claims
- 0848US2007296335A1Process for Producing Layered Member and Layered MemberNIHASHI TOKUAKI·Filed 2005·Application pending·0 cites
- 0940US2009065786A1Process for producing thin nitride film on sapphire substrate and thin nitride film producing apparatusJAPAN SCIENCE & TECH AGENCY·Filed 2006·Application pending·0 cites
- 1033US2012067410A1Schottky-barrier junction element, and photoelectric conversion element and solar cell using the sameMATSUKI NOBUYUKI·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →