Process for Producing Layered Member and Layered Member

Abstract

The object is to provide a photoelectric surface member which allows higher quantum efficiency. In order to achieve this object, a photoelectric surface member 1 a is a crystalline layer formed by a nitride type semiconductor material, and comprises a nitride semiconductor crystal layer 10 where the direction from the first surface 101 to the second surface 102 is the negative c polar direction of the crystal, an adhesive layer 12 formed along the first surface 101 of the nitride semiconductor crystal layer 10, and a glass substrate 14 which is adhesively fixed to the adhesive layer 12 such that the adhesive layer 12 is located between the glass substrate 14 and the nitride semiconductor crystal layer 10.

1 . A layered member manufacturing method, comprising the steps of: 
 preparing a substrate for crystal growth which is a crystalline substance with the main surface in the ( 111 ) plane orientation;    forming a buffer layer along the main surface of said substrate for crystal growth;    forming a nitride semiconductor crystal layer on said buffer layer by crystal growth in the Group III element surface (positive c polar) direction using a nitride type semiconductor material;    forming an adhesive layer on said nitride semiconductor crystal layer;    adhesively fixing the substrates onto said adhesive layer; and    removing said substrate for crystal growth to obtain said buffer layer with a negative c polar surface.    
     
     
         2 . The manufacturing method according to  claim 1 , further comprising, after the step of removing said substrate for crystal growth, a step of removing said buffer layer to obtain said nitride semiconductor crystal layer with a negative c polar surface.  
     
     
         3 . The manufacturing method according to  claim 1 , further comprising, after the step of removing the substrate for crystal growth, a step of causing crystal growth of the semiconductor material on the negative c polar surface of said buffer layer.  
     
     
         4 . The manufacturing method according to  claim 2 , further comprising, after the step of removing the buffer layer, a step of causing crystal growth of the semiconductor material on the negative c polar surface of said nitride semiconductor crystal layer.  
     
     
         5 . The manufacturing method according to  claim 1 , further comprising, prior to the step of removing the substrate for crystal growth, a step of forming a protective layer which covers at least the periphery of said substrate.  
     
     
         6 . (canceled)  
     
     
         7 . (canceled)  
     
     
         8 . The manufacturing method according to  claim 2 , further comprising, prior to the step of removing the substrate for crystal growth, a step of forming a protective layer which covers at least the periphery of said substrate.  
     
     
         9 . The manufacturing method according to  claim 3 , further comprising, prior to the step of removing the substrate for crystal growth, a step of forming a protective layer which covers at least the periphery of said substrate.  
     
     
         10 . The manufacturing method according to  claim 4 , further comprising, prior to the step of removing the substrate for crystal growth, a step of forming a protective layer which covers at least the periphery of said substrate.  
     
     
         11 . A layered member, comprising: 
 a nitride semiconductor crystal layer which is a crystalline layer formed by a nitride type semiconductor material and in which the direction from the first surface thereof to the second surface thereof is the N surface (negative c polar) direction of the crystal;    an adhesive layer formed along the first surface of said nitride semiconductor crystal layer; and    a substrate which is adhesively fixed to said adhesive layer such that said adhesive layer is located between the substrate and said nitride semiconductor crystal layer.    
     
     
         12 . The layered member according to  claim 11 , wherein said layered member is used as a photoelectric surface member for forming a photoelectric surface which emits a photoelectron which has been excited by incident light, said first surface is an incidence plane where said light enters, and said second surface is an emission plane which emits said photoelectrons, and said substrate is a glass substrate formed to transmit said light.