Inventor · disambiguated record
Shunro Fuke
Also filed as: FUKE SHUNRO
7 granted patents·2 pending applications·44 citations·filing 1999–2014
82Inventor score
Files withJAPAN SCIENCE & TECH AGENCY2NIHASHI TOKUAKI2HAMAMATSU PHOTONICS KK1MATSUMURA HISASHI1SANKEN ELECTRIC CO LTD1
Top patents by PatentIndex Score
9 records- 0179US8888914B2Process for producing layered member and layered memberNIHASHI TOKUAKI·Filed 2010·Granted Nov 18, 2014·6 cites·11 claims
- 0276US7525131B2Photoelectric surface and photodetectorUNIV SHIZUOKA NAT UNIV CORP·Filed 2006·Granted Apr 28, 2009·4 cites·10 claims
- 0372US8981338B2Semiconductor photocathode and method for manufacturing the sameSANKEN ELECTRIC CO LTD·Filed 2013·Granted Mar 17, 2015·3 cites·19 claims
- 0460US8673748B2Method for fabricating semiconductor thin film using substrate irradiated with focused light, apparatus for fabricating semiconductor thin film using substrate irradiated with focused light, method for selectively growing semiconductor thin film using substrate irradiated with focused light, and semiconductor element using substrate irradiated with focused lightMATSUMURA HISASHI·Filed 2010·Granted Mar 18, 2014·2 cites·9 claims
- 0559US9431570B2Process for producing layered member and layered memberHAMAMATSU PHOTONICS KK·Filed 2014·Granted Aug 30, 2016·0 cites·11 claims
- 0656US6239005B1Method of forming epitaxially grown semiconductor layer on metal layer and light emitting semiconductor device comprising said semiconductor layerSHIZUOKA UNIVERSITY·Filed 1999·Granted May 29, 2001·26 cites·16 claims
- 0755US7820246B2Method for growing thin nitride film onto substrate and thin nitride film deviceJAPAN SCIENCE & TECH AGENCY·Filed 2004·Granted Oct 26, 2010·3 cites·5 claims
- 0848US2007296335A1Process for Producing Layered Member and Layered MemberNIHASHI TOKUAKI·Filed 2005·Application pending·0 cites
- 0940US2009065786A1Process for producing thin nitride film on sapphire substrate and thin nitride film producing apparatusJAPAN SCIENCE & TECH AGENCY·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →