Inventor · disambiguated record
Masahiko Takikawa
Also filed as: TAKIKAWA MASAHIKO
14 granted patents·1 pending application·159 citations·filing 1987–2015
92Inventor score
Top patents by PatentIndex Score
15 records- 0184US5302840AHEMT type semiconductor device having two semiconductor well layersFUJITSU LTD·Filed 1992·Granted Apr 12, 1994·63 cites·10 claims
- 0265US8552735B2Switching apparatus and test apparatusHATA YOSHIYUKI·Filed 2011·Granted Oct 8, 2013·2 cites·12 claims
- 0364US5818078ASemiconductor device having a regrowth crystal regionFUJITSU LTD·Filed 1995·Granted Oct 6, 1998·20 cites·17 claims
- 0456US5900641AField effect semiconductor device having a reduced leakage currentFUJITSU LTD·Filed 1997·Granted May 4, 1999·16 cites·9 claims
- 0554US8466566B2Semiconductor device, method for manufacturing of semiconductor device, and switching circuitNAKANISHI MAKOTO·Filed 2011·Granted Jun 18, 2013·1 cites·9 claims
- 0653US5949095AEnhancement type MESFETFUJITSU LTD·Filed 1996·Granted Sep 7, 1999·16 cites·19 claims
- 0748US5104825AMethod of producing a semiconductor deviceFUJITSU LTD·Filed 1991·Granted Apr 14, 1992·11 cites·10 claims
- 0845US9184741B2Switch apparatus and test apparatusADVANTEST CORP·Filed 2013·Granted Nov 10, 2015·0 cites·16 claims
- 0945US2014361790A1Drive circuit, switch apparatus, and test apparatusADVANTEST CORP·Filed 2013·Application pending·0 cites
- 1042US9584114B2Semiconductor switchADVANTEST CORP·Filed 2015·Granted Feb 28, 2017·0 cites·8 claims
- 1141US4958203AHigh electron mobility transistorFUJITSU LTD·Filed 1987·Granted Sep 18, 1990·8 cites·4 claims
- 1240US5148245ASemiconductor device having a selectively doped heterostructureFUJITSU LTD·Filed 1991·Granted Sep 15, 1992·8 cites·4 claims
- 1335US5170230ASemiconductor device and production method thereofFUJITSU LTD·Filed 1990·Granted Dec 8, 1992·4 cites·9 claims
- 1434US5945695ASemiconductor device with InGaP channel layerFUJITSU LTD·Filed 1997·Granted Aug 31, 1999·3 cites·11 claims
- 1533US5128275AMethod for fabricating a semiconductor device including a semi-insulating semiconductor layerFUJITSU LTD·Filed 1991·Granted Jul 7, 1992·7 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →