Inventor · disambiguated record
Masayoshi Tarutani
Also filed as: TARUTANI MASAYOSHI · UCHIKAWA FUSAOKI
25 granted patents·2 pending applications·400 citations·filing 1997–2020
95Inventor score
Top patents by PatentIndex Score
27 records- 0196US8492881B2Magnetic storage deviceKUROIWA TAKEHARU·Filed 2010·Granted Jul 23, 2013·97 cites·16 claims
- 0287US6273957B1Vaporizing device for CVD source materials and CVD apparatus employing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 14, 2001·28 cites·20 claims
- 0385US6470144B1Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured therebyMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 22, 2002·66 cites·4 claims
- 0483US6638880B2Chemical vapor deposition apparatus and a method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 28, 2003·23 cites·3 claims
- 0578US6312526B1Chemical vapor deposition apparatus and a method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 6, 2001·45 cites·15 claims
- 0676US9093361B2Semiconductor deviceHINO SHIRO·Filed 2012·Granted Jul 28, 2015·5 cites·12 claims
- 0776US6179920B1CVD apparatus for forming thin film having high dielectric constantMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 30, 2001·43 cites·5 claims
- 0875US8569106B2Method for manufacturing silicon carbide semiconductor deviceHAMANO KENICHI·Filed 2010·Granted Oct 29, 2013·5 cites·8 claims
- 0975US6110283AChemical vapor deposition apparatusMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 29, 2000·47 cites·18 claims
- 1069US9653390B2Semiconductor device and semiconductor device manufacturing methodNAKATA YOSUKE·Filed 2012·Granted May 16, 2017·3 cites·13 claims
- 1169US8405172B2Semiconductor device and semiconductor device assemblyTSUJIUCHI MIKIO·Filed 2011·Granted Mar 26, 2013·3 cites·14 claims
- 1264US6512885B1Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 28, 2003·9 cites·7 claims
- 1363US8679952B2Method of manufacturing silicon carbide epitaxial waferTOMITA NOBUYUKI·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 1461US10957691B2Semiconductor device, semiconductor device manufacturing method, and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Mar 23, 2021·0 cites·3 claims
- 1559US11031357B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Jun 8, 2021·0 cites·16 claims
- 1658US10600779B2Semiconductor device, semiconductor device manufacturing method, and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Mar 24, 2020·0 cites·5 claims
- 1754US6235649B1Method of forming high dielectric constant thin film and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 22, 2001·16 cites·8 claims
- 1851US10756029B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Aug 25, 2020·0 cites·2 claims
- 1951US9911705B2Semiconductor device and semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Mar 6, 2018·0 cites·7 claims
- 2048US9755037B2Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Sep 5, 2017·0 cites·4 claims
- 2144US10461049B2Semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Oct 29, 2019·0 cites·13 claims
- 2242US2001039923A1Vaporizing device for CVD source materials and CVD apparatus employing the sameFiled 2001·Application pending·0 cites
- 2341US6448191B2Method of forming high dielectric constant thin film and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 10, 2002·0 cites·6 claims
- 2441US6117482AMethod and apparatus for monitoring CVD liquid source for forming thin film with high dielectric constantMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Sep 12, 2000·8 cites·6 claims
- 2540US2014232004A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Application pending·0 cites
- 2633US12021118B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jun 25, 2024·0 cites·14 claims
- 2728US9553063B2Semiconductor element, semiconductor device and method for manufacturing semiconductor elementOHTSU YOSHIJI·Filed 2011·Granted Jan 24, 2017·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →