Inventor · disambiguated record
Masakatsu Tsuchiaki
Also filed as: TSUCHIAKI MASAKATSU
27 granted patents·557 citations·filing 1994–2013
97Inventor score
Top patents by PatentIndex Score
27 records- 0191US5963789AMethod for silicon island formationTOSHIBA KK·Filed 1996·Granted Oct 5, 1999·124 cites·19 claims
- 0290US7420230B2MOSFET-type semiconductor device, and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Sep 2, 2008·15 cites·10 claims
- 0389US6271566B1Semiconductor device having a carbon containing insulation layer formed under the source/drainTOSHIBA CORP·Filed 1999·Granted Aug 7, 2001·78 cites·6 claims
- 0488US6051509ASemiconductor integrated circuit manufacturing method and deviceTOSHIBA KK·Filed 1998·Granted Apr 18, 2000·73 cites·13 claims
- 0583US7786538B2Semiconductor device having a nickel silicide layer on a single crystal silicon layerTOSHIBA KK·Filed 2008·Granted Aug 31, 2010·8 cites·12 claims
- 0682US5895255AShallow trench isolation formation with deep trench capTOSHIBA KK·Filed 1995·Granted Apr 20, 1999·65 cites·20 claims
- 0781US7755114B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted Jul 13, 2010·9 cites·14 claims
- 0872US7678652B2MOSFET-type semiconductor device, and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Mar 16, 2010·4 cites·14 claims
- 0970US7939869B2Semiconductor device having a magnetization configuration of source and drain ferromagnetic electrodes and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted May 10, 2011·4 cites·31 claims
- 1069US6815298B2Method of forming a semiconductor device including forming an amorphous silicon layer over and reacting with a silicide layerTOSHIBA KK·Filed 2002·Granted Nov 9, 2004·13 cites·7 claims
- 1168US5444007AFormation of trenches having different profilesTOSHIBA KK·Filed 1994·Granted Aug 22, 1995·35 cites·20 claims
- 1267US7732875B2Semiconductor device fabrication method and semiconductor device fabricated therebyTOSHIBA KK·Filed 2007·Granted Jun 8, 2010·3 cites·11 claims
- 1367US6683356B2Semiconductor device with oxygen doped regionsTOSHIBA KK·Filed 2002·Granted Jan 27, 2004·11 cites·20 claims
- 1466US7622774B2Method of manufacturing semiconductor device and semiconductor deviceTOSHIBA KK·Filed 2006·Granted Nov 24, 2009·2 cites·18 claims
- 1566US7157777B2Semiconductor device including silicided source and drain electrodesTOSHIBA KK·Filed 2004·Granted Jan 2, 2007·13 cites·12 claims
- 1665US6545327B2Semiconductor device having different gate insulating films with different amount of carbonTOSHIBA CORP·Filed 2001·Granted Apr 8, 2003·7 cites·10 claims
- 1764US5756391AAnti-oxidation layer formation by carbon incorporationTOSHIBA KK·Filed 1995·Granted May 26, 1998·29 cites·6 claims
- 1862US7701017B2MOS semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2007·Granted Apr 20, 2010·1 cites·11 claims
- 1960US7919813B2Method of manufacturing semiconductor device and semiconductor deviceTOSHIBA KK·Filed 2009·Granted Apr 5, 2011·1 cites·20 claims
- 2059US6127237AEtching end point detecting method based on junction current measurement and etching apparatusTOSHIBA KK·Filed 1998·Granted Oct 3, 2000·22 cites·34 claims
- 2158US6054371AMethod of manufacturing a semiconductor device by detachably mounting substrates to a holder boardTOSHIBA KK·Filed 1998·Granted Apr 25, 2000·21 cites·28 claims
- 2256US5753961ATrench isolation structures for a semiconductor deviceTOSHIBA KK·Filed 1995·Granted May 19, 1998·18 cites·15 claims
- 2347US9093504B2Semiconductor device manufacturing method and semiconductor deviceTOSHIBA KK·Filed 2013·Granted Jul 28, 2015·0 cites·10 claims
- 2443US7115905B2Semiconductor device including forming an amorphous silicon layer over and reacting with a silicide layerTOSHIBA KK·Filed 2004·Granted Oct 3, 2006·1 cites·9 claims
- 2542US7696575B2Semiconductor device and method of manufacture thereofTOSHIBA KK·Filed 2007·Granted Apr 13, 2010·0 cites·7 claims
- 2642US7378344B2Method of manufacturing a semiconductor device including a silicide layer having an NiSi phase provided on source and drain regionsTOSHIBA KK·Filed 2006·Granted May 27, 2008·0 cites·5 claims
- 2741US7094693B2Method of manufacturing semiconductor device and semiconductor deviceTOSHIBA KK·Filed 2004·Granted Aug 22, 2006·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →