Inventor · disambiguated record
Masaki Tsukude
Also filed as: TSUKUDE MASAKI
116 granted patents·4 pending applications·4,263 citations·filing 1989–2018
99Inventor score
Top patents by PatentIndex Score
120 records- 0199US5726946ASemiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 10, 1998·224 cites·22 claims
- 0299US5610533ASwitched substrate bias for logic circuitsMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 11, 1997·262 cites·15 claims
- 0399US4977542ADynamic semiconductor memory device of a twisted bit line system having improved reliability of readoutMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Dec 11, 1990·446 cites·21 claims
- 0498US5646900ASense amplifier including MOS transistors having threshold voltages controlled dynamically in a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 8, 1997·314 cites·31 claims
- 0597US6232793B1Switched backgate bias for FETMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 15, 2001·140 cites·8 claims
- 0694US5831924ASynchronous semiconductor memory device having a plurality of banks distributed in a plurality of memory arraysMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 3, 1998·164 cites·15 claims
- 0794US5703522ASwitched substrate bias for MOS-DRAM circuitsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 30, 1997·94 cites·13 claims
- 0893US6134171ASemiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 17, 2000·68 cites·6 claims
- 0993US5838627AArrangement of power supply and data input/output pads in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 17, 1998·92 cites·32 claims
- 1093US5687123ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 11, 1997·66 cites·42 claims
- 1193US5652725ASemiconductor memory device having a redundant row and a redundant column which can be accessed prior to substitutionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 29, 1997·112 cites·7 claims
- 1292US5812490ASynchronous dynamic semiconductor memory device capable of restricting delay of data output timingMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 22, 1998·102 cites·18 claims
- 1392US5604710AArrangement of power supply and data input/output pads in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 18, 1997·82 cites·50 claims
- 1491US5249155ASemiconductor device incorporating internal voltage down converting circuitMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 28, 1993·81 cites·35 claims
- 1590US6643208B2Semiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Nov 4, 2003·32 cites·1 claims
- 1689US5854561ASwitched substrate bias for MOS DRAM circuitsMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 29, 1998·59 cites·26 claims
- 1789US5659517ASemiconductor memory device with an improved hierarchical power supply line configurationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 19, 1997·71 cites·16 claims
- 1888US6097180AVoltage supply circuit and semiconductor device including such circuitMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 1, 2000·44 cites·18 claims
- 1986US6205067B1Semiconductor memory device having burn-in mode operation stably acceleratedMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Mar 20, 2001·34 cites·1 claims
- 2086US6011428AVoltage supply circuit and semiconductor device including such circuitMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 4, 2000·43 cites·26 claims
- 2185US7693004B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2008·Granted Apr 6, 2010·15 cites·14 claims
- 2285US6434065B1Semiconductor memory device of low power consumptionMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 13, 2002·39 cites·12 claims
- 2385US6404056B1Semiconductor integrated circuitMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jun 11, 2002·69 cites·18 claims
- 2485USRE36089EColumn selecting circuit in semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 9, 1999·52 cites·14 claims
- 2584US8061895B2Semiconductor deviceTSUKUDE MASAKI·Filed 2009·Granted Nov 22, 2011·18 cites·9 claims
- 2683US5959927ASemiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 28, 1999·33 cites·18 claims
- 2783US5682343AHierarchical bit line arrangement in a semiconductor memoryMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 28, 1997·54 cites·26 claims
- 2883US5568440ASemiconductor memory device having self-refreshing functionMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 22, 1996·42 cites·5 claims
- 2981US6859415B2Fully-hidden refresh dynamic random access memoryRENESAS TECH CORP·Filed 2003·Granted Feb 22, 2005·20 cites·12 claims
- 3081US6246625B1Semiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 12, 2001·19 cites·11 claims
- 3180US6525984B2Semiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Feb 25, 2003·17 cites·7 claims
- 3280US6414883B2Semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 2, 2002·18 cites·3 claims
- 3380US5694364ASemiconductor integrated circuit device having a test mode for reliability evaluationMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 2, 1997·46 cites·15 claims
- 3479US6813211B2Fully hidden refresh dynamic random access memoryRENESAS TECH CORP·Filed 2003·Granted Nov 2, 2004·23 cites·9 claims
- 3579US6697910B2Semiconductor memory device having refresh circuitRENESAS TECH CORP·Filed 2001·Granted Feb 24, 2004·27 cites·11 claims
- 3679US5949731ASemiconductor memory device having burn-in mode operation stably acceleratedMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 7, 1999·33 cites·14 claims
- 3778US5917765ASemiconductor memory device capable of burn in mode operationMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 29, 1999·42 cites·15 claims
- 3878US5815428ASemiconductor memory device having hierarchical bit line structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 29, 1998·37 cites·21 claims
- 3977US5856951ASemiconductor memory device with an improved hierarchical power supply line configurationMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 5, 1999·33 cites·16 claims
- 4077US5185744ASemiconductor memory device with test circuitMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Feb 9, 1993·39 cites·40 claims
- 4176US7397298B2Semiconductor device having internal power supply voltage generation circuitRENESAS TECH CORP·Filed 2006·Granted Jul 8, 2008·8 cites·5 claims
- 4276US5943273ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 24, 1999·23 cites·23 claims
- 4376US5894448ASemiconductor memory device having hierarchy control circuit architecture of master/local control circuits permitting high speed accessingMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 13, 1999·38 cites·20 claims
- 4475US7447098B2Semiconductor memory device having complete hidden refresh functionRENESAS TECH CORP·Filed 2007·Granted Nov 4, 2008·8 cites·2 claims
- 4575US6341098B2Semiconductor integrated circuit device having hierarchical power source arrangementMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 22, 2002·14 cites·11 claims
- 4675US6038183ASemiconductor memory device having burn-in mode operation stably acceleratedMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Mar 14, 2000·28 cites·4 claims
- 4775US5408140ASubstrate potential generating circuit generating substrate potential of lower level and semiconductor device including the sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 18, 1995·33 cites·4 claims
- 4874US5060230AOn chip semiconductor memory arbitrary pattern, parallel test apparatus and methodMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Oct 22, 1991·47 cites·18 claims
- 4973US6721225B2Semiconductor memory device with activation of a burst refresh when a long cycle is detectedRENESAS TECH CORP·Filed 2002·Granted Apr 13, 2004·20 cites·12 claims
- 5073US5896328ASemiconductor memory device allowing writing of desired data to a storage node of a defective memory cellMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 20, 1999·34 cites·12 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →