Inventor · disambiguated record

Masanori Tsutsumi

Also filed as: TSUTSUMI MASANORI

51 granted patents·19 pending applications·980 citations·filing 1989–2025

98Inventor score

Technology areasH10W H10B H10D H01L H10P

Files withSANDISK TECHNOLOGIES LLC48 SANDISK TECHNOLOGIES INC8 MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 TDK CORP3 PANASONIC CORP2

Top patents by PatentIndex Score

70 records

0198US10192878B1Three-dimensional memory device with self-aligned multi-level drain select gate electrodesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 29, 2019·54 cites·12 claims
0298US9716105B1Three-dimensional memory device with different thickness insulating layers and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 25, 2017·51 cites·12 claims
0398US9576967B1Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openingsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Feb 21, 2017·199 cites·25 claims
0497US11393836B2Three-dimensional memory device with separated source-side lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 19, 2022·7 cites·20 claims
0597US10559582B2Three-dimensional memory device containing source contact to bottom of vertical channels and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 11, 2020·24 cites·10 claims
0697US9991277B1Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 5, 2018·32 cites·21 claims
0797US9666594B2Multi-charge region memory cells for a vertical NAND deviceSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 30, 2017·35 cites·28 claims
0897US9305849B1Method of making a three dimensional NAND deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·47 cites·11 claims
0996US11417621B2Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 16, 2022·6 cites·15 claims
1096US11367733B1Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 21, 2022·4 cites·20 claims
1196US11152284B1Three-dimensional memory device with a dielectric isolation spacer and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 19, 2021·7 cites·19 claims
1296US10957680B2Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 23, 2021·18 cites·1 claims
1396US10903222B2Three-dimensional memory device containing a carbon-doped source contact layer and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 26, 2021·13 cites·16 claims
1496US10236300B2On-pitch drain select level isolation structure for three-dimensional memory device and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 19, 2019·15 cites·13 claims
1596US10141331B1Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Nov 27, 2018·53 cites·22 claims
1696US10083982B2Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Sep 25, 2018·34 cites·24 claims
1796US9780034B1Three-dimensional memory device containing annular etch-stop spacer and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 3, 2017·38 cites·4 claims
1896US9305937B1Bottom recess process for an outer blocking dielectric layer inside a memory openingSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·39 cites·45 claims
1995US10748927B1Three-dimensional memory device with drain-select-level isolation structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 18, 2020·16 cites·20 claims
2095US10453798B2Three-dimensional memory device with gated contact via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 22, 2019·15 cites·13 claims
2195US6818929B2Standard cell for plural power supplies and related technologiesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 16, 2004·127 cites·30 claims
2293US12058854B2Three-dimensional memory device with isolated source strips and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 6, 2024·2 cites·20 claims
2393US10861869B2Three-dimensional memory device having a slimmed aluminum oxide blocking dielectric and method of making sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 8, 2020·9 cites·9 claims
2493US10748925B1Three-dimensional memory device containing channels with laterally pegged dielectric coresSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 18, 2020·15 cites·13 claims
2592US11894298B2Three-dimensional memory device containing amorphous and crystalline blocking dielectric layersSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 6, 2024·2 cites·20 claims
2692US9754956B2Uniform thickness blocking dielectric portions in a three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Sep 5, 2017·10 cites·13 claims
2791US11889684B2Three-dimensional memory device with separated source-side lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 30, 2024·2 cites·18 claims
2891US9530787B2Batch contacts for multiple electrically conductive layersSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 27, 2016·18 cites·11 claims
2990US10903232B2Three-dimensional memory devices containing memory stack structures with laterally separated charge storage elements and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 26, 2021·6 cites·18 claims
3089US9812463B2Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 7, 2017·6 cites·26 claims
3188US7456478B2MOS transistor circuitPANASONIC CORP·Filed 2005·Granted Nov 25, 2008·16 cites·1 claims
3284US11289416B2Three-dimensional memory device containing amorphous and crystalline blocking dielectric layersSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 29, 2022·4 cites·20 claims
3383US7786513B2Semiconductor integrated circuit device and power source wiring method thereforPANASONIC CORP·Filed 2007·Granted Aug 31, 2010·11 cites·4 claims
3482US2025386499A1Three-dimensional memory device with through-stack contact via structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
3576US2025386503A1Three-dimensional memory device with through-stack contact via structures and methods for forming the sameSANDISK TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
3673US9754820B2Three-dimensional memory device containing an aluminum oxide etch stop layer for backside contact structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2016·Granted Sep 5, 2017·2 cites·24 claims
3773US7892969B2Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Feb 22, 2011·4 cites·10 claims
3872US6810340B2Electromagnetic disturbance analysis method and apparatus and semiconductor device manufacturing method using the methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Oct 26, 2004·19 cites·58 claims
3966US9413328B2Diplexer including two bandpass filtersTDK CORP·Filed 2014·Granted Aug 9, 2016·2 cites·7 claims
4065US7227211B2Decoupling capacitors and semiconductor integrated circuitMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jun 5, 2007·12 cites·7 claims
4164US2025275135A1Multi-tier memory array including laterally-staggered staircases and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
4264US2025386497A1Three-dimensional memory device with through-stack contact via structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
4363US2025232812A1Three-dimensional memory device including a schottky source contact structure and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
4462US11705881B2Branching filterTDK CORP·Filed 2022·Granted Jul 18, 2023·0 cites·9 claims
4562US2025234545A1Three-dimensional memory device including a p-i-n junction source contact structure and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
4661US12382638B2Three-dimensional memory device and method of making thereof using double pitch word line formationSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 5, 2025·0 cites·20 claims
4761US12354944B2Three-dimensional memory device containing plural metal oxide blocking dielectric layers and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2022·Granted Jul 8, 2025·0 cites·10 claims
4861USRE49165EOn-pitch drain select level isolation structure for three-dimensional memory device and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 9, 2022·0 cites·13 claims
4961US2024215243A1Three-dimensional memory device with through-stack contact via structures and method of making the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
5061US2024215244A1Memory device containing constricted channel ends and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites

Showing the top 50 of 70 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →