Inventor · disambiguated record
Man Wong
Also filed as: WONG MAN · WONG MAN CHUN
30 granted patents·6 pending applications·145 citations·filing 1997–2023
95Inventor score
Files withUNIV HONG KONG SCIENCE & TECHN14KWOK HOI-SING7UNIV HONG KONG SCI & TECH6WONG MAN3SHENZHEN CHINA STAR OPTOELECT2
Top patents by PatentIndex Score
36 records- 0188US6677176B2Method of manufacturing an integrated electronic microphone having a floating gate electrodeUNIV HONG KONG SCIENCE & TECHN·Filed 2002·Granted Jan 13, 2004·59 cites·9 claims
- 0285US7642575B2Integrated electronic microphone having a perforated rigid back plate membraneUNIV HONG KONG SCIENCE & TECHN·Filed 2006·Granted Jan 5, 2010·13 cites·10 claims
- 0380US8263968B2Double sided emission organic light emitting diode displayKWOK HOI-SING·Filed 2006·Granted Sep 11, 2012·7 cites·6 claims
- 0479US6831489B2Low-voltage high-speed frequency-divider circuitUNIV HONG KONG SCIENCE & TECHN·Filed 2003·Granted Dec 14, 2004·23 cites·7 claims
- 0573US8222646B2Thin-film transistors with metal source and drain and methods of fabricationWONG MAN·Filed 2006·Granted Jul 17, 2012·6 cites·15 claims
- 0670US8088676B2Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefromWONG MAN·Filed 2006·Granted Jan 3, 2012·4 cites·20 claims
- 0770US7402947B2Anode for organic light emitting diodeUNIV HONG KONG SCIENCE & TECHN·Filed 2005·Granted Jul 22, 2008·3 cites·24 claims
- 0868US8716050B2Oxide microchannel with controllable diameterUNIV HONG KONG SCIENCE & TECHN·Filed 2012·Granted May 6, 2014·2 cites·20 claims
- 0967US8878176B2Metal-oxide based thin-film transistors with fluorinated active layerWONG MAN·Filed 2012·Granted Nov 4, 2014·3 cites·10 claims
- 1064US9960281B2Metal oxide thin film transistor with source and drain regions doped at room temperatureUNIV HONG KONG SCI & TECH·Filed 2015·Granted May 1, 2018·1 cites·20 claims
- 1164US9818607B2Metal-induced crystallization of amorphous silicon in an oxidizing atmosphereUNIV HONG KONG SCI & TECH·Filed 2015·Granted Nov 14, 2017·1 cites·34 claims
- 1263US8426865B2Polycrystalline silicon thin film transistors with bridged-grain structuresKWOK HOI SING·Filed 2008·Granted Apr 23, 2013·3 cites·53 claims
- 1362US10381564B2Organic-inorganic perovskite materials and optoelectronic devices fabricated by close space sublimationUNIV HONG KONG SCI & TECH·Filed 2016·Granted Aug 13, 2019·1 cites·13 claims
- 1461US7907116B2Dual output voltage system with charge recyclingSOLOMON SYSTECH LTD·Filed 2007·Granted Mar 15, 2011·1 cites·8 claims
- 1561US7381600B2Method of annealing polycrystalline silicon using solid-state laser and devices built thereonUNIV HONG KONG SCIENCE & TECHN·Filed 2005·Granted Jun 3, 2008·1 cites·26 claims
- 1660US9214568B2Thin film transistor with two-dimensional doping arrayUNIV HONG KONG SCIENCE & TECHN·Filed 2013·Granted Dec 15, 2015·1 cites·20 claims
- 1760US8228264B2Segment driving method and system for a bistable displayNG CHI WAI·Filed 2007·Granted Jul 24, 2012·2 cites·12 claims
- 1860US8013957B2Transflective liquid crystal device and method of manufacturing the sameUNIV HONG KONG SCIENCE & TECHN·Filed 2005·Granted Sep 6, 2011·1 cites·30 claims
- 1957US7923911B2Polycrystalline silicon as an electrode for a light emitting diode and method of making the sameUNIV HONG KONG SCIENCE & TECHN·Filed 2008·Granted Apr 12, 2011·0 cites·41 claims
- 2053US9299863B2Ultrathin film multi-crystalline photovoltaic deviceKWOK HOI SING·Filed 2009·Granted Mar 29, 2016·0 cites·12 claims
- 2152US8339026B2Polycrystalline silicon as an electrode for a light emitting diode and method of making the sameKWOK HOI SING·Filed 2011·Granted Dec 25, 2012·0 cites·20 claims
- 2251US2025180151A1A crawler-type pipeline detectorBONBON X LTD·Filed 2023·Application pending·0 cites
- 2350US2019131132A1Manufacture method of polysilicon thin film and polysilicon tft structureSHENZHEN CHINA STAR OPTOELECT·Filed 2018·Application pending·0 cites
- 2450US2006103299A1Polycrystalline silicon as an electrode for a light emitting diode & method of making the sameUNIV HONG KONG SCIENCE & TECHN·Filed 2005·Application pending·0 cites
- 2549US10504939B2Integration of silicon thin-film transistors and metal-oxide thin film transistorsUNIV HONG KONG SCI & TECH·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
- 2648US10204787B2Manufacture method of polysilicon thin film and polysilicon TFT structureSHENZHEN CHINA STAR OPTOELECT·Filed 2015·Granted Feb 12, 2019·0 cites·11 claims
- 2748US7790580B2Metal-induced crystallization of amorphous silicon in thin film transistorsUNIV HONG KONG SCIENCE & TECHN·Filed 2007·Granted Sep 7, 2010·0 cites·25 claims
- 2847US6953716B2Polysilicon material and semiconductor devices formed therefromUNIV HONG KONG SCIENCE & TECHN·Filed 2003·Granted Oct 11, 2005·2 cites·8 claims
- 2946US9166197B2Metallic anode treated by carbon tetrafluoride plasma for organic light emitting deviceKWOK HOI SING·Filed 2006·Granted Oct 20, 2015·0 cites·19 claims
- 3045US5869847AThin film transistorUNIV HONG KONG SCIENCE & TECHN·Filed 1997·Granted Feb 9, 1999·11 cites·10 claims
- 3143US8338237B2Metal-induced crystallization of amorphous silicon in thin film transistorsKWOK HOI SING·Filed 2010·Granted Dec 25, 2012·0 cites·16 claims
- 3243US2006250079A1Intermediate layers treated by cf4-plasma for stacked organic light-emitting devicesUNIV HONG KONG SCIENCE & TECHN·Filed 2006·Application pending·0 cites
- 3339US8754416B2Method for fabrication of active-matrix display panelsKWOK HOI-SING·Filed 2006·Granted Jun 17, 2014·0 cites·8 claims
- 3438US10032924B2Metal oxide thin film transistor with channel, source and drain regions respectively capped with covers of different gas permeabilityUNIV HONG KONG SCI & TECH·Filed 2015·Granted Jul 24, 2018·0 cites·51 claims
- 3537US2018315860A1Vertical thin-film transistor with multiple-junction channelUNIV HONG KONG SCI & TECH·Filed 2017·Application pending·0 cites
- 3628US2004012025A1Anode for organic light emitting diodesFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →