Inventor · disambiguated record
Markus Zundel
Also filed as: ZUNDEL MARKUS
160 granted patents·24 pending applications·775 citations·filing 2002–2022
99Inventor score
Files withINFINEON TECHNOLOGIES AG107INFINEON TECHNOLOGIES AUSTRIA22ZUNDEL MARKUS14INFINEON TECHNOLOGIES AUSTRIA AG12HIRLER FRANZ6
Top patents by PatentIndex Score
184 records- 0195US7307328B2Semiconductor device with temperature sensorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Dec 11, 2007·42 cites·7 claims
- 0293US8314447B2Semiconductor including lateral HEMTHIRLER FRANZ·Filed 2010·Granted Nov 20, 2012·14 cites·9 claims
- 0393US7655975B2Power trench transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 2, 2010·25 cites·18 claims
- 0493US6833584B2Trench power semiconductorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 21, 2004·96 cites·8 claims
- 0593US6806533B2Semiconductor component with an increased breakdown voltage in the edge areaINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 19, 2004·83 cites·10 claims
- 0692US8907408B2Stress-reduced field-effect semiconductor device and method for forming thereforSEDLMAIER STEFAN·Filed 2012·Granted Dec 9, 2014·15 cites·19 claims
- 0791US7598143B2Method for producing an integrated circuit with a trench transistor structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Oct 6, 2009·22 cites·24 claims
- 0891US7414286B2Trench transistor and method for fabricating a trench transistorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 19, 2008·18 cites·15 claims
- 0990US7851349B2Method for producing a connection electrode for two semiconductor zones arranged one above anotherINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 14, 2010·15 cites·11 claims
- 1090US7372103B2MOS field plate trench transistor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted May 13, 2008·18 cites·23 claims
- 1189US8519473B2Vertical transistor componentMEISER ANDREAS PETER·Filed 2010·Granted Aug 27, 2013·12 cites·9 claims
- 1289US7868363B2Semiconductor component arrangement comprising a trench transistorINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jan 11, 2011·18 cites·5 claims
- 1388US8084865B2Anchoring structure and intermeshing structureHIRLER FRANZ·Filed 2008·Granted Dec 27, 2011·17 cites·13 claims
- 1487US9076805B2Current sense transistor with embedding of sense transistor cellsTHIELE STEFFEN·Filed 2012·Granted Jul 7, 2015·10 cites·23 claims
- 1587US9059256B2Method for producing a controllable semiconductor componentMEISER ANDREAS·Filed 2012·Granted Jun 16, 2015·7 cites·25 claims
- 1685US10586792B2Semiconductor device including an integrated resistorINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·3 cites·12 claims
- 1785US8501561B2Method for producing a semiconductor component arrangement comprising a trench transistorZUNDEL MARKUS·Filed 2011·Granted Aug 6, 2013·7 cites·8 claims
- 1885US8461648B2Semiconductor component with a drift region and a drift control regionPFIRSCH FRANK·Filed 2006·Granted Jun 11, 2013·12 cites·34 claims
- 1983US9735243B2Semiconductor device, integrated circuit and method of forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 15, 2017·5 cites·16 claims
- 2083US8803297B2Semiconductor device including a stress relief layer and method of manufacturingNELLE PETER·Filed 2012·Granted Aug 12, 2014·7 cites·16 claims
- 2183US7867879B2Method for dividing a semiconductor substrate and a method for producing a semiconductor circuit arrangementINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jan 11, 2011·8 cites·16 claims
- 2283US7615847B2Method for producing a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Nov 10, 2009·10 cites·14 claims
- 2382US10276706B2Gated diode in a press-fit housing and an alternator assembly having a gated diode arranged in a load pathINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 30, 2019·3 cites·10 claims
- 2482US9941276B2Method of producing a semiconductor component arrangement comprising a trench transistorINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 10, 2018·2 cites·14 claims
- 2582US9698228B2Transistor device with field-electrodeINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jul 4, 2017·4 cites·20 claims
- 2682US9455205B2Semiconductor devices and processing methodsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Sep 27, 2016·6 cites·22 claims
- 2782US9184284B2Method for operating field-effect transistor, field-effect transistor and circuit configurationINFINEON TECHNOLOGIES AG·Filed 2012·Granted Nov 10, 2015·6 cites·26 claims
- 2882US8120135B2TransistorKRISCHKE NORBERT·Filed 2010·Granted Feb 21, 2012·12 cites·23 claims
- 2981US12136670B2Semiconductor device having contact trenches extending from opposite sides of a semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2022·Granted Nov 5, 2024·0 cites·12 claims
- 3081US8169045B2System and method for constructing shielded seebeck temperature difference sensorDIBRA DONALD·Filed 2009·Granted May 1, 2012·10 cites·28 claims
- 3180US11018250B2Semiconductor device with multi-branch gate contact structureINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 25, 2021·2 cites·17 claims
- 3280US10243071B2Transistor with field electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Mar 26, 2019·2 cites·20 claims
- 3380US10186508B2Semiconductor device including transistor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 22, 2019·2 cites·17 claims
- 3480US9123559B2Method for producing a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2013·Granted Sep 1, 2015·5 cites·25 claims
- 3580US8896047B2Termination arrangement for vertical MOSFETWOOD ANDREW·Filed 2012·Granted Nov 25, 2014·4 cites·13 claims
- 3679US9806188B2Method for producing a controllable semiconductor component having trenches with different widths and depthsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 31, 2017·2 cites·14 claims
- 3779US9219011B2Separation of chips on a substrateINFINEON TECHNOLOGIES AG·Filed 2013·Granted Dec 22, 2015·3 cites·12 claims
- 3878US9362371B2Method for producing a controllable semiconductor component having a plurality of trenchesINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 7, 2016·2 cites·23 claims
- 3978US9324625B2Gated diode, battery charging assembly and generator assemblyAHLERS DIRK·Filed 2012·Granted Apr 26, 2016·5 cites·13 claims
- 4078US9190511B2Semiconductor component with a drift region and a drift control regionINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Nov 17, 2015·4 cites·34 claims
- 4178US8044460B2Electronic device with connecting structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Oct 25, 2011·6 cites·11 claims
- 4278US7612408B2MOS transistor deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted Nov 3, 2009·28 cites·16 claims
- 4378US7173306B2Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zoneINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 6, 2007·22 cites·21 claims
- 4477US9960268B2Semiconductor devices, power semiconductor devices, and methods for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 1, 2018·3 cites·23 claims
- 4577US9099419B2Test method and test arrangementINFINEON TECHNOLOGIES AG·Filed 2012·Granted Aug 4, 2015·3 cites·23 claims
- 4676US9508812B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Nov 29, 2016·3 cites·14 claims
- 4776US9218960B2Method of manufacturing a semiconductor device including a stress relief layerINFINEON TECHNOLOGIES AG·Filed 2014·Granted Dec 22, 2015·3 cites·7 claims
- 4876US8884335B2Semiconductor including lateral HEMTINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Nov 11, 2014·3 cites·13 claims
- 4976US8796761B2Semiconductor device including charged structure and methods for manufacturing a semiconductor deviceHIRLER FRANZ·Filed 2012·Granted Aug 5, 2014·4 cites·19 claims
- 5076US8274109B2Semiconductor device with dynamical avalanche breakdown characteristics and method for manufacturing a semiconductor deviceZUNDEL MARKUS·Filed 2007·Granted Sep 25, 2012·5 cites·20 claims
Showing the top 50 of 184 patent records by PatentIndex Score.
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