Inventor · disambiguated record
Meng-Han Chou
Also filed as: CHOU MENG-HAN
15 granted patents·18 pending applications·13 citations·filing 2020–2025
87Inventor score
Top patents by PatentIndex Score
33 records- 0197US11456383B2Semiconductor device having a contact plug with an air gap spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·7 cites·20 claims
- 0297US11289417B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·14 claims
- 0391US11901455B2Method of manufacturing a FinFET by implanting a dielectric with a dopantTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
- 0485US12368098B2Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 0585US2025309103A1Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0683US2025324653A1METHOD OF MANUFACTURING A FinFET BY IMPLANTING A DIELECTRIC WITH A DOPANTTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0782US12432963B2Device having an air gap adjacent to a contact plug and covered by a doped dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 0882US2025351423A1Contact formation with reduced dopant loss and increased dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0980US2025096041A1Bottom lateral expansion of contact plugs through implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1079US12300496B2Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1179US12112977B2Reducing spacing between conductive features through implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1279US2024387180A1Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1379US2024363399A1Reducing spacing between conductive features through implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1477US2025098206A1Contact formation with reduced dopant loss and increased dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1576US11973027B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·14 claims
- 1676US2025351439A1Complementary field effect transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1774US12183632B2Bottom lateral expansion of contact plugs through implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 1873US2025301695A1Transistor source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1971US11742210B2Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 2070US12278141B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 15, 2025·0 cites·20 claims
- 2170US12199156B2Contact formation with reduced dopant loss and increased dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 2270US11615982B2Reducing spacing between conductive features through implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·0 cites·20 claims
- 2370US2025210414A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2468US11502000B2Bottom lateral expansion of contact plugs through implantationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 2567US12426300B2Transistor source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 2665US2024258387A1Complementary Field Effect Transistors and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2762US2025385125A1Sti protection layer formation through implantation and the structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2861US2025351486A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2960US2025234617A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3056US2025133771A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3154US2024154010A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3252US2024387669A1Integrated circuit device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3332US2021306680A1System, method, user equipment and computer-readable recording medium for live streaming activityACER INC·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →