Inventor · disambiguated record
Meng Ding
Also filed as: DING MENG
35 granted patents·14 pending applications·310 citations·filing 2003–2025
97Inventor score
Top patents by PatentIndex Score
49 records- 0194US7365389B1Memory cell having enhanced high-K dielectricSPANSION LLC·Filed 2004·Granted Apr 29, 2008·89 cites·11 claims
- 0290US7469465B2Method of providing a low-stress sensor configuration for a lithography-defined read sensorHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Dec 30, 2008·26 cites·15 claims
- 0390US7206172B2Electrical lapping guide embedded in a shield of a magnetic headHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Apr 17, 2007·42 cites·9 claims
- 0489US7432156B1Memory device and methods for its fabricationSPANSION LLC·Filed 2006·Granted Oct 7, 2008·15 cites·15 claims
- 0589US7285827B1Back-to-back NPN/PNP protection diodesSPANSION LLC·Filed 2005·Granted Oct 23, 2007·14 cites·16 claims
- 0686US7072156B2Method for biasing magnetoresistive sensor with decoupled hard bias multilayersHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Jul 4, 2006·19 cites·7 claims
- 0785US7463459B2Self-pinned read sensor design with enhanced lead stabilizing mechanismHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Dec 9, 2008·18 cites·15 claims
- 0885US7394702B2Methods for erasing and programming memory devicesSPANSION LLC·Filed 2006·Granted Jul 1, 2008·12 cites·19 claims
- 0982US7236334B2Repeatable ESD protection utilizing a process for unshorting a first shorting material between electrical pads and reshorting by recreating the shortHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Jun 26, 2007·12 cites·34 claims
- 1081US7345853B2Device with ESD protection utilizing a shorting material between electrical pads or leads which are shorted then unshorted by severing the shorting material and then recreating the short by reapplying the shorting materialHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Mar 18, 2008·5 cites·8 claims
- 1176US7750407B2Strapping contact for charge protectionSPANSION LLC·Filed 2006·Granted Jul 6, 2010·4 cites·20 claims
- 1273US8143661B2Memory cell system with charge trapFANG SHENQING·Filed 2006·Granted Mar 27, 2012·5 cites·19 claims
- 1373US7564091B2Memory device and methods for its fabricationSPANSION LLC·Filed 2008·Granted Jul 21, 2009·4 cites·5 claims
- 1473US7463525B2Negative wordline bias for reduction of leakage current during flash memory operationSPANSION LLC·Filed 2006·Granted Dec 9, 2008·8 cites·16 claims
- 1573US7346977B2Method for making a magnetoresistive read head having a pinned layer width greater than the free layer stripe heightHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Mar 25, 2008·7 cites·12 claims
- 1671US7630253B2Flash memory programming and verification with reduced leakage currentSPANSION LLC·Filed 2006·Granted Dec 8, 2009·7 cites·12 claims
- 1767US7291279B2Method of making a read sensor while protecting it from electrostatic discharge (ESD) damageHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Nov 6, 2007·6 cites·22 claims
- 1867US7062838B2Method of forming an embedded read elementHITACHI GLOBAL STORAGE TECH·Filed 2003·Granted Jun 20, 2006·11 cites·17 claims
- 1962US2025284431A1Data Processing Method and ApparatusHUAWEI CLOUD COMPUTING TECH CO LTD·Filed 2025·Application pending·0 cites
- 2060US7339222B1Method for determining wordline critical dimension in a memory array and related structureSPANSION LLC·Filed 2006·Granted Mar 4, 2008·1 cites·16 claims
- 2158US10723029B2Safety protection method of dynamic detection for mobile robotsZHEJIANG GUOZI ROBOT TECH CO LTD·Filed 2016·Granted Jul 28, 2020·1 cites·5 claims
- 2258US7538383B1Two-bit memory cell having conductive charge storage segments and method for fabricating sameSPANSION LLC·Filed 2006·Granted May 26, 2009·1 cites·10 claims
- 2354US11990289B2Light-emitting keyboard module with a metal base material flexible copper-clad double-sided circuit boardSHENZHEN HUI CHUANG DA TECH CO LTD·Filed 2022·Granted May 21, 2024·0 cites·12 claims
- 2454US9276007B2System and method for manufacturing self-aligned STI with single polySPANSION LLC·Filed 2014·Granted Mar 1, 2016·0 cites·12 claims
- 2552US8031528B2Flash memory programming and verification with reduced leakage currentSPANSION LLC·Filed 2009·Granted Oct 4, 2011·2 cites·20 claims
- 2652US7199986B2Magnetoresistive sensor with decoupled hard bias multilayersHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Apr 3, 2007·1 cites·20 claims
- 2751US9190531B2Flash memory cell with flair gateSPANSION LLC·Filed 2012·Granted Nov 17, 2015·0 cites·13 claims
- 2851US8367537B2Flash memory cell with a flair gateSPANSION LLC·Filed 2007·Granted Feb 5, 2013·0 cites·5 claims
- 2950US10622370B1System and method for manufacturing self-aligned STI with single polyMONTEREY RES LLC·Filed 2015·Granted Apr 14, 2020·0 cites·16 claims
- 3050US7573103B1Back-to-back NPN/PNP protection diodesSPANSION LLC·Filed 2007·Granted Aug 11, 2009·0 cites·19 claims
- 3149US12243314B2Method and system for recognizing human action in apron based on thermal infrared visionUNIV NANJING AERONAUTICS & ASTRONAUTICS·Filed 2021·Granted Mar 4, 2025·0 cites·10 claims
- 3249US2014061771A1Memory Device with Charge TrapSPANSION LLC·Filed 2013·Application pending·0 cites
- 3347US8404541B2Strapping contact for charge protectionZHENG WEI·Filed 2010·Granted Mar 26, 2013·0 cites·20 claims
- 3444US2008150011A1Integrated circuit system with memory systemSPANSION LLC·Filed 2007·Application pending·0 cites
- 3544US2016217017A1Determining workflow completion stateIBM·Filed 2015·Application pending·0 cites
- 3643US8642441B1Self-aligned STI with single poly for manufacturing a flash memory deviceTHURGATE TIM·Filed 2006·Granted Feb 4, 2014·0 cites·12 claims
- 3743US8587049B2Memory cell system with charge trapDING MENG·Filed 2006·Granted Nov 19, 2013·0 cites·10 claims
- 3843US2016217005A1Determining workflow completion stateIBM·Filed 2015·Application pending·0 cites
- 3941US2008150005A1Memory system with depletion gateSPANSION LLC·Filed 2007·Application pending·0 cites
- 4041US2008032464A1Memory cell system with nitride charge isolationSPANSION LLC·Filed 2006·Application pending·0 cites
- 4141US2008150000A1Memory system with select gate eraseSPANSION LLC·Filed 2006·Application pending·0 cites
- 4240US2008032475A1Memory cell system with gradient charge isolationSPANSION LLC·Filed 2006·Application pending·0 cites
- 4340US2018004365A1Method and apparatus for recommending an interface themeBEIJING XIAOMI MOBILE SOFTWARE CO LTD·Filed 2016·Application pending·0 cites
- 4440US2008079061A1Flash memory cell structure for increased program speed and erase speedSPANSION LLC·Filed 2006·Application pending·0 cites
- 4539US2007247924A1Methods for erasing memory devices and multi-level programming memory deviceZHENG WEI·Filed 2006·Application pending·0 cites
- 4639US2006268593A1Read-only memory array with dielectric breakdown programmabilitySPANSION LLC·Filed 2005·Application pending·0 cites
- 4737US8809936B2Memory cell system with multiple nitride layersXUE LEI·Filed 2006·Granted Aug 19, 2014·0 cites·18 claims
- 4837US8803216B2Memory cell system using silicon-rich nitrideDING MENG·Filed 2006·Granted Aug 12, 2014·0 cites·20 claims
- 4937US2015378784A1Work flow level job input/outputIBM·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →