Inventor · disambiguated record
Mei-Hsuan Lin
Also filed as: LIN MEI-HSUAN
14 granted patents·3 pending applications·17 citations·filing 2011–2024
87Inventor score
Top patents by PatentIndex Score
17 records- 0190US12154808B2System and method for wafer manufacturing process managementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·1 cites·20 claims
- 0285US8533639B2Optical proximity correction for active region design layoutLIN MEI-HSUAN·Filed 2011·Granted Sep 10, 2013·7 cites·20 claims
- 0375US2025062147A1System and method for wafer manufacturing process managementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0474US2024393118A1Method of performing inter-site backup processing of wafer lotsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0570US8994097B2MOS devices having non-uniform stressor dopingLIN MEI-HSUAN·Filed 2012·Granted Mar 31, 2015·2 cites·20 claims
- 0669US9978604B2Salicide formation using a cap layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·1 cites·19 claims
- 0768US8513143B2Semiconductor structure and method of manufacturingLIN MEI-HSUAN·Filed 2011·Granted Aug 20, 2013·2 cites·19 claims
- 0865US8775982B2Optical proximity correction for active region design layoutTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 8, 2014·2 cites·20 claims
- 0963US8765545B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 1, 2014·1 cites·20 claims
- 1061US8470660B2Method of manufacturing a semiconductor deviceLIN MEI-HSUAN·Filed 2011·Granted Jun 25, 2013·1 cites·20 claims
- 1155US2018261461A1Salicide formation using a cap layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Application pending·0 cites
- 1254US9024391B2Semiconductor structure having stressorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 5, 2015·0 cites·20 claims
- 1352US9343318B2Salicide formation using a cap layerLIN MEI-HSUAN·Filed 2012·Granted May 17, 2016·0 cites·5 claims
- 1452US8836088B2Semiconductor structure having etch stop layerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 16, 2014·0 cites·20 claims
- 1548US9209270B2MOS devices having non-uniform stressor dopingTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Dec 8, 2015·0 cites·19 claims
- 1647US8846492B2Integrated circuit having a stressor and method of forming the sameLIN MEI-HSUAN·Filed 2011·Granted Sep 30, 2014·0 cites·20 claims
- 1740US8527915B2Method and system for modifying doped region design layout during mask preparation to tune device performanceLIN MEI-HSUAN·Filed 2011·Granted Sep 3, 2013·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →