Inventor · disambiguated record
Mehdi Saremi
Also filed as: SAREMI MEHDI
3 granted patents·12 pending applications·2 citations·filing 2020–2025
54Inventor score
Top patents by PatentIndex Score
15 records- 0192US12356665B2Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·2 cites·18 claims
- 0274US2025311304A1Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0367US12456647B2Nanosheet transistor devices and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·16 claims
- 0464US2023299199A1Stress incorporation in semiconductor devicesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 0562US11699755B2Stress incorporation in semiconductor devicesAPPLIED MATERIALS INC·Filed 2020·Granted Jul 11, 2023·0 cites·14 claims
- 0658US2023178440A1Methods of forming integrated circuit devices including stacked transistors and integrated circuit devices formed by the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 0755US2024429307A1Systems and methods of applying stress in transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0853US2024405128A1Field effect transistor (fet) and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0952US2025072098A1Source/drain isolation of top and bottom tiers of 3d field-effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1052US2024347537A1Common output in 3d stack fetSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1152US2025366107A1System and methods for shaped epitaxial stressorsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1252US2024413232A1High performance fetsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1350US2024047539A13d stacked field-effect transistor device with pn junction structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1450US2024047456A13dsfet standard cell architecture with source-drain junction isolationSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1547US2025359192A1System and method for high stress transfer to channelSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →