Inventor · disambiguated record
Meng Wang
Also filed as: WANG MENG · WANG MENG-CHIANG
23 granted patents·6 pending applications·20 citations·filing 2011–2024
92Inventor score
Files withSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD25DELTA ELECTRONICS INC1UNITED MICROELECTRONICS CORP1WANG MENG1YANGTZE MEMORY TECH CO LTD1
Top patents by PatentIndex Score
29 records- 0194US11967644B2Semiconductor device comprising separate different well regions with doping typesSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2023·Granted Apr 23, 2024·2 cites·8 claims
- 0289US10867999B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 15, 2020·5 cites·20 claims
- 0383US10998416B2Laterally diffused metal oxide semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted May 4, 2021·3 cites·18 claims
- 0482US11251276B2LDMOS transistor and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted Feb 15, 2022·3 cites·15 claims
- 0582US2024194782A1Semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2024·Application pending·0 cites
- 0679US11121251B2Laterally diffused metal oxide semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted Sep 14, 2021·2 cites·7 claims
- 0778US10903340B2Laterally diffused metal oxide semiconductor structure and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted Jan 26, 2021·2 cites·19 claims
- 0874US12310098B2Semiconductor structure having a semiconductor substrate and an isolation componentSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2022·Granted May 20, 2025·0 cites·11 claims
- 0974US11031497B2Semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted Jun 8, 2021·1 cites·9 claims
- 1073US12119343B2Semiconductor structure having a semiconductor substrate and an isolation componentSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2022·Granted Oct 15, 2024·0 cites·10 claims
- 1172US11581433B2Method for manufacturing a lateral double-diffused metal-oxide-semiconductor (ldmos) transistorSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2021·Granted Feb 14, 2023·0 cites·9 claims
- 1270US11031388B2Semiconductor structure and driving chipSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted Jun 8, 2021·1 cites·12 claims
- 1368US10998305B2Semiconductor dieSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted May 4, 2021·1 cites·20 claims
- 1464US12166091B2LDMOS transistor and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2022·Granted Dec 10, 2024·0 cites·10 claims
- 1563US2022328617A1Field effect transistor and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2022·Application pending·0 cites
- 1662US12513963B2Bidirectional switching devices, its terminal structures, and electronic devicesSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
- 1762US11710787B2Laterally diffused metal oxide semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2021·Granted Jul 25, 2023·0 cites·11 claims
- 1861US11942540B2Semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted Mar 26, 2024·0 cites·12 claims
- 1961US2025311321A1Semiconductor device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 2060US11742206B2Laterally diffused metal oxide semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2021·Granted Aug 29, 2023·0 cites·12 claims
- 2159US11830932B2Laterally diffused metal oxide semiconductor structure and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2021·Granted Nov 28, 2023·0 cites·17 claims
- 2259US11417647B2Semiconductor structure having a semiconducture substrate and an isolation componentSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted Aug 16, 2022·0 cites·8 claims
- 2355US10923268B2Wireless power transmitting module and installation method thereofDELTA ELECTRONICS INC·Filed 2019·Granted Feb 16, 2021·0 cites·15 claims
- 2452US11887889B2Semiconductor device and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2021·Granted Jan 30, 2024·0 cites·16 claims
- 2551US2022384430A1Electrode structure, semiconductor structure, and manufacturing method of electrode structureSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2022·Application pending·0 cites
- 2650US2019237537A1Field effect transistor and method for manufacturing the sameSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Application pending·0 cites
- 2744US11329153B2Method for manufacturing laterally diffused metal oxide semiconductor device and semiconductor deviceSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2019·Granted May 10, 2022·0 cites·16 claims
- 2839US2014340404A1Method and apparatus for generating 3d free viewpoint videoWANG MENG·Filed 2011·Application pending·0 cites
- 2938US9627513B2Method for manufacturing lateral double-diffused metal oxide semiconductor transistorSILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD·Filed 2015·Granted Apr 18, 2017·0 cites·13 claims
Join the waitlist — get patent alerts
Get an alert when Meng Wang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →