Inventor · disambiguated record
Meisheng Zhou
Also filed as: ZHOU MEI SHENG · ZHOU MEISHENG
11 granted patents·3 pending applications·22 citations·filing 2002–2012
84Inventor score
Files withCHARTERED SEMICONDUCTOR MFG4GLOBALFOUNDRIES SG PTE LTD2ZHOU WENZHAN2FUMITAKE MIENO1MIENO FUMITAKE1
Top patents by PatentIndex Score
14 records- 0180US7892900B2Integrated circuit system employing sacrificial spacersGLOBALFOUNDRIES SG PTE LTD·Filed 2008·Granted Feb 22, 2011·9 cites·20 claims
- 0277US8405222B2Integrated circuit system with via and method of manufacture thereofYU HONG·Filed 2010·Granted Mar 26, 2013·5 cites·20 claims
- 0372US7142940B2Method of processing semiconductor waferUMCI LTD·Filed 2005·Granted Nov 28, 2006·5 cites·20 claims
- 0455US8572524B2Statistical optical proximity correctionZHOU WENZHAN·Filed 2007·Granted Oct 29, 2013·1 cites·19 claims
- 0551US8035201B2Reliable interconnectionGLOBALFOUNDRIES SG PTE LTD·Filed 2009·Granted Oct 11, 2011·0 cites·20 claims
- 0650US6821888B2Method of copper/copper surface bonding using a conducting polymer for application in IC chip bondingCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Nov 23, 2004·2 cites·16 claims
- 0749US8896810B2Liquid immersion scanning exposure system using an immersion liquid confined within a lens hoodZHOU WENZHAN·Filed 2009·Granted Nov 25, 2014·0 cites·20 claims
- 0843US8912102B2Laser annealingPOON CHYIU HYIA·Filed 2009·Granted Dec 16, 2014·0 cites·23 claims
- 0943US8753956B2Semiconductor structure and fabrication methodFUMITAKE MIENO·Filed 2012·Granted Jun 17, 2014·0 cites·20 claims
- 1043US2010109045A1Integrated circuit system employing stress-engineered layersCHARTERED SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites
- 1141US7928020B2Method of fabricating a nitrogenated silicon oxide layer and MOS device having sameCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Apr 19, 2011·0 cites·23 claims
- 1240US2009179307A1Integrated circuit system employing feed-forward controlCHARTERED SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites
- 1338US9478654B2Method for manufacturing semiconductor device with tensile stressMIENO FUMITAKE·Filed 2012·Granted Oct 25, 2016·0 cites·16 claims
- 1435US2007066047A1Method of forming opening and contactYE JIANHUI·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →