Inventor · disambiguated record
Michael S. Ameen
Also filed as: AMEEN MICHAEL · AMEEN MICHAEL S
13 granted patents·2,478 citations·filing 1993–2020
95Inventor score
Top patents by PatentIndex Score
13 records- 0198US6368987B1Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactionsTOKYO ELECTRON LTD·Filed 2000·Granted Apr 9, 2002·642 cites·11 claims
- 0298US6274496B1Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturingTOKYO ELECTRON LTD·Filed 2000·Granted Aug 14, 2001·391 cites·36 claims
- 0398US6161500AApparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactionsTOKYO ELECTRON LTD·Filed 1997·Granted Dec 19, 2000·814 cites·30 claims
- 0497US11170967B2Liquid metal ion sourceAXCELIS TECH INC·Filed 2020·Granted Nov 9, 2021·9 cites·20 claims
- 0597US5926737AUse of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processingTOKYO ELECTRON LTD·Filed 1997·Granted Jul 20, 1999·213 cites·23 claims
- 0692US5834371AMethod and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereofTOKYO ELECTRON LTD·Filed 1997·Granted Nov 10, 1998·126 cites·17 claims
- 0783US6093645AElimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridationTOKYO ELECTRON LTD·Filed 1997·Granted Jul 25, 2000·54 cites·32 claims
- 0880US6143128AApparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereofTOKYO ELECTRON LTD·Filed 1998·Granted Nov 7, 2000·53 cites·10 claims
- 0977US5989652AMethod of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applicationsTOKYO ELECTRON LTD·Filed 1997·Granted Nov 23, 1999·38 cites·8 claims
- 1070US6037252AMethod of titanium nitride contact plug formationTOKYO ELECTRON LTD·Filed 1997·Granted Mar 14, 2000·35 cites·7 claims
- 1167US5455197AControl of the crystal orientation dependent properties of a film deposited on a semiconductor waferMATERIALS RESEARCH CORP·Filed 1993·Granted Oct 3, 1995·55 cites·17 claims
- 1265US5972790AMethod for forming salicidesTOKYO ELECTRON LTD·Filed 1995·Granted Oct 26, 1999·24 cites·9 claims
- 1363US6635569B1Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatusTOKYO ELECTRON LTD·Filed 1998·Granted Oct 21, 2003·24 cites·29 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →