Inventor · disambiguated record
Michel Bruel
Also filed as: BRUEL MICHEL
69 granted patents·6 pending applications·8,358 citations·filing 1981–2018
99Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE44BRUEL MICHEL13SOITEC SILICON ON INSULATOR5ASPAR BERNARD3OPSITECH OPTICAL SYS ON A CHIP2
Top patents by PatentIndex Score
75 records- 0199US5714395AProcess for the manufacture of thin films of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1996·Granted Feb 3, 1998·525 cites·6 claims
- 0299US5374564AProcess for the production of thin semiconductor material filmsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1992·Granted Dec 20, 1994·2k cites·9 claims
- 0398USRE39484EProcess for the production of thin semiconductor material filmsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Feb 6, 2007·305 cites·70 claims
- 0498US7067396B2Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Jun 27, 2006·309 cites·16 claims
- 0598US6809009B2Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Oct 26, 2004·363 cites·16 claims
- 0698US6809044B1Method for making a thin film using pressurizationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Oct 26, 2004·184 cites·20 claims
- 0798US6756286B1Method for transferring a thin film comprising a step of generating inclusionsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Jun 29, 2004·263 cites·19 claims
- 0898US6103597AMethod of obtaining a thin film of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Aug 15, 2000·399 cites·11 claims
- 0998US6020252AMethod of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Feb 1, 2000·619 cites·15 claims
- 1097US7498234B2Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Mar 3, 2009·34 cites·26 claims
- 1197US6946365B2Method for producing a thin film comprising introduction of gaseous speciesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Sep 20, 2005·163 cites·19 claims
- 1297US6303468B1Method for making a thin film of solid materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Oct 16, 2001·271 cites·19 claims
- 1397US6225192B1Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted May 1, 2001·234 cites·30 claims
- 1496US5559043AMethod for placing semiconductive plates on a supportCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1995·Granted Sep 24, 1996·237 cites·10 claims
- 1596US4585945AProcess and apparatus for implanting particles in a solidCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1983·Granted Apr 29, 1986·110 cites·10 claims
- 1696US4536657AProcess and apparatus for obtaining beams of particles with a spatially modulated densityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1983·Granted Aug 20, 1985·100 cites·17 claims
- 1795US7883994B2Process for the transfer of a thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Feb 8, 2011·21 cites·9 claims
- 1895US6225190B1Process for the separation of at least two elements of a structure in contact with one another by ion implantationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted May 1, 2001·104 cites·13 claims
- 1995US6190998B1Method for achieving a thin film of solid material and applications of this methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Feb 20, 2001·185 cites·18 claims
- 2094US6335258B1Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate elementCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Jan 1, 2002·174 cites·11 claims
- 2194US5993677AProcess for transferring a thin film from an initial substrate onto a final substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Nov 30, 1999·194 cites·13 claims
- 2294US5863830AProcess for the production of a structure having a thin semiconductor film on a substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1995·Granted Jan 26, 1999·193 cites·14 claims
- 2394US5494835AProcess for the production of a relief structure on a semiconductor material supportCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1994·Granted Feb 27, 1996·173 cites·10 claims
- 2493US6558998B2SOI type integrated circuit with a decoupling capacity and process for embodiment of such a circuitFiled 2002·Granted May 6, 2003·79 cites·4 claims
- 2592US5804086AStructure having cavities and process for producing such a structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1995·Granted Sep 8, 1998·136 cites·11 claims
- 2691US6465327B1Method for producing a thin membrane and resulting structure with membraneCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Oct 15, 2002·61 cites·24 claims
- 2791US4704302AProcess for producing an insulating layer buried in a semiconductor substrate by ion implantationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1986·Granted Nov 3, 1987·122 cites·12 claims
- 2890US8609514B2Process for the transfer of a thin film comprising an inclusion creation stepCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Dec 17, 2013·6 cites·14 claims
- 2990US4452644AProcess for doping semiconductorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1982·Granted Jun 5, 1984·93 cites·8 claims
- 3089US4368083AProcess for doping semiconductorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1981·Granted Jan 11, 1983·95 cites·11 claims
- 3187US7229899B2Process for the transfer of a thin filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Jun 12, 2007·25 cites·26 claims
- 3287US4508056ATarget holder with mechanical scanningCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1983·Granted Apr 2, 1985·100 cites·13 claims
- 3385US8101503B2Method of producing a thin layer of semiconductor materialASPAR BERNARD·Filed 2008·Granted Jan 24, 2012·6 cites·14 claims
- 3485US7300853B2Thin layer semi-conductor structure comprising a heat distribution layerSOITEC SILICON ON INSULATOR·Filed 2004·Granted Nov 27, 2007·35 cites·28 claims
- 3585US6316333B1Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone and involving an ion implantationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Nov 13, 2001·76 cites·10 claims
- 3684US8470712B2Process for the transfer of a thin film comprising an inclusion creation stepMORICEAU HUBERT·Filed 2010·Granted Jun 25, 2013·4 cites·24 claims
- 3781US6362077B1Structure comprising a thin layer of material made up of conductive zones and insulating zones and a method of manufacturing such a structureCOMMISSARIAT A L ATOMIQUE·Filed 1999·Granted Mar 26, 2002·62 cites·25 claims
- 3880US11222824B2Method for transferring a layer by using a detachable structureSOITEC SILICON ON INSULATOR·Filed 2018·Granted Jan 11, 2022·2 cites·18 claims
- 3978US6159323AProcess for selective transfer of a microstructure formed on an initial substrate to a final substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Dec 12, 2000·54 cites·19 claims
- 4075US10537150B2Movement assistance deviceAPLINOV·Filed 2016·Granted Jan 21, 2020·4 cites·14 claims
- 4172US8563399B2Detachable substrate and processes for fabricating and detaching such a substrateBRUEL MICHEL·Filed 2011·Granted Oct 22, 2013·3 cites·19 claims
- 4272US8420506B2Process for cleaving a substrateBRUEL MICHEL·Filed 2011·Granted Apr 16, 2013·3 cites·21 claims
- 4371US7846816B2Method for producing a multilayer structure comprising a separating layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Dec 7, 2010·5 cites·29 claims
- 4471US7368030B2Intermediate suction support and its utilisation for producing a thin film structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted May 6, 2008·4 cites·11 claims
- 4570US5661333ASubstrate for integrated components comprising a thin film and an intermediate filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1995·Granted Aug 26, 1997·38 cites·9 claims
- 4670US4564763AProcess and apparatus for varying the deflection of the path of a charged particle beamCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1983·Granted Jan 14, 1986·14 cites·3 claims
- 4769US6261928B1Producing microstructures or nanostructures on a supportCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Jul 17, 2001·35 cites·25 claims
- 4869US5985688AMethod for inserting a gaseous phase in a sealed cavity by ion implantationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Nov 16, 1999·35 cites·27 claims
- 4969US4370176AProcess for fast droping of semiconductorsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1981·Granted Jan 25, 1983·29 cites·16 claims
- 5068US7332030B2Method of treating a part in order to alter at least one of the properties thereofBRUEL MICHEL·Filed 2003·Granted Feb 19, 2008·15 cites·47 claims
Showing the top 50 of 75 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →