Inventor · disambiguated record
Ming Cai
Also filed as: CAI MING · CAI MING-XUE
44 granted patents·24 pending applications·210 citations·filing 2004–2024
97Inventor score
Top patents by PatentIndex Score
68 records- 0196US8513131B2Fin field effect transistor with variable channel thickness for threshold voltage tuningCAI MING·Filed 2011·Granted Aug 20, 2013·39 cites·14 claims
- 0295US8697523B2Integration of SMT in replacement gate FINFET process flowCAI MING·Filed 2012·Granted Apr 15, 2014·25 cites·18 claims
- 0394US8648438B2Structure and method to form passive devices in ETSOI process flowCAI MING·Filed 2011·Granted Feb 11, 2014·19 cites·19 claims
- 0491US11567382B2Terminal with a color changing screen layerHUAWEI TECH CO LTD·Filed 2021·Granted Jan 31, 2023·2 cites·19 claims
- 0589US10197706B1System and method for sub-seasonal forecasts of extreme weather events in winterUNIV FLORIDA STATE RES FOUND INC·Filed 2017·Granted Feb 5, 2019·26 cites·24 claims
- 0688US9059244B2Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusionIBM·Filed 2013·Granted Jun 16, 2015·8 cites·15 claims
- 0788US8658505B2Embedded stressors for multigate transistor devicesCAI MING·Filed 2011·Granted Feb 25, 2014·9 cites·9 claims
- 0888US8530315B2finFET with fully silicided gateCAI MING·Filed 2012·Granted Sep 10, 2013·9 cites·9 claims
- 0987US8470678B2Tensile stress enhancement of nitride film for stressed channel field effect transistor fabricationCAI MING·Filed 2011·Granted Jun 25, 2013·8 cites·20 claims
- 1083US8349716B2Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor deviceIBM·Filed 2010·Granted Jan 8, 2013·7 cites·20 claims
- 1181US9397158B2Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusionGLOBALFOUNDRIES US 2 LLC·Filed 2015·Granted Jul 19, 2016·3 cites·20 claims
- 1279US10719163B2Object determining method, object display method, object switching method and electronic deviceLV LEI·Filed 2013·Granted Jul 21, 2020·5 cites·8 claims
- 1379US9425296B2Vertical tunnel field effect transistorQUALCOMM INC·Filed 2013·Granted Aug 23, 2016·5 cites·22 claims
- 1479US8421132B2Post-planarization UV curing of stress inducing layers in replacement gate transistor fabricationCAI MING·Filed 2011·Granted Apr 16, 2013·4 cites·25 claims
- 1578US9158409B2Object determining method, object display method, object switching method and electronic deviceLV LEI·Filed 2010·Granted Oct 13, 2015·5 cites·16 claims
- 1677US8765491B2Shallow trench isolation recess repair using spacer formation processCAI MING·Filed 2010·Granted Jul 1, 2014·6 cites·13 claims
- 1775US8659091B2Embedded stressors for multigate transistor devicesCAI MING·Filed 2012·Granted Feb 25, 2014·3 cites·14 claims
- 1873US8492218B1Removal of an overlap of dual stress linersCAI MING·Filed 2012·Granted Jul 23, 2013·4 cites·20 claims
- 1971US10143110B2Middle frame member and method for manufacturing middle frame memberHUAWEI TECH CO LTD·Filed 2018·Granted Nov 27, 2018·2 cites·16 claims
- 2071US9040399B2Threshold voltage adjustment for thin body MOSFETsBRODSKY MARYJANE·Filed 2011·Granted May 26, 2015·3 cites·5 claims
- 2169US2024200174A1Lightweight steel and preparation method thereof, steel structural part, and electronic deviceHUAWEI TECH CO LTD·Filed 2024·Application pending·0 cites
- 2266US9507485B2Electronic device, displaying method and file saving methodCAI MING·Filed 2011·Granted Nov 29, 2016·2 cites·5 claims
- 2366US8485758B2Yieldable cone bolt and method of manufacturing sameCAI MING·Filed 2009·Granted Jul 16, 2013·6 cites·28 claims
- 2466US2023383389A1Steel material, steel mechanical part and preparation method thereof, and terminalHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
- 2563US2024200178A1Steel, steel structural part, electronic device, and steel structural part preparation methodHUAWEI TECH CO LTD·Filed 2024·Application pending·0 cites
- 2662US8643120B2FinFET with fully silicided gateCAI MING·Filed 2012·Granted Feb 4, 2014·1 cites·15 claims
- 2762US2023212721A1Steel, steel mechanical part, electronic device, and preparation method for steel mechanical partHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
- 2862US2024081710A1ECG Electrode, Fabrication Method Thereof, and Electronic DeviceHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
- 2961US12391023B2Electronic device, rotating shaft, laminated composite material, and method for manufacturing laminated composite materialHUAWEI TECH CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·17 claims
- 3060US7057195B2Scanner and calibration method used thereinBENQ CORP·Filed 2004·Granted Jun 6, 2006·4 cites·21 claims
- 3159US11877109B2Earmuff module of a headphoneMERRY ELECTRONICS SHENZHEN CO LTD·Filed 2022·Granted Jan 16, 2024·0 cites·9 claims
- 3258US8899883B2Anchor tendon with selectively deformable portionsCHAMPAIGNE DENIS·Filed 2009·Granted Dec 2, 2014·5 cites·25 claims
- 3355US9076775B2System and method of varying gate lengths of multiple coresQUALCOMM INC·Filed 2013·Granted Jul 7, 2015·0 cites·37 claims
- 3455US8957464B2Transistors with uniaxial stress channelsIBM·Filed 2014·Granted Feb 17, 2015·0 cites·20 claims
- 3554US2023220525A1Fe-mn-al-c lightweight steel, production method thereof, terminal, steel mechanical part, and electronic deviceHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
- 3654US2023176616A1Housing structure, production method thereof, and electronic deviceHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
- 3753US2016005849A1Method and apparatus for 3d concurrent multiple parallel 2d quantum wellsQUALCOMM INC·Filed 2014·Application pending·0 cites
- 3853US2015001625A1Structure and method of high-performance extremely thin silicon on insulator complementary metal-oxide-semiconductor transistors with dual stress buried insulatorsIBM·Filed 2014·Application pending·0 cites
- 3952US9570466B2Structure and method to form passive devices in ETSOI process flowGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 14, 2017·0 cites·20 claims
- 4052US9461040B2System and method of varying gate lengths of multiple coresQUALCOMM INC·Filed 2015·Granted Oct 4, 2016·0 cites·30 claims
- 4151US9484402B2Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusionGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 1, 2016·0 cites·20 claims
- 4251US8633077B2Transistors with uniaxial stress channelsCAI MING·Filed 2012·Granted Jan 21, 2014·0 cites·18 claims
- 4351US2013285156A1Fin field effect transistor with variable channel thickness for threshold voltage tuningIBM·Filed 2013·Application pending·0 cites
- 4450US2006151682A1Scanner and calibration method used thereinBENQ CORP·Filed 2006·Application pending·0 cites
- 4549US8927364B2Structure and method of high-performance extremely thin silicon on insulator complementary metal—oxide—semiconductor transistors with dual stress buried insulatorsCAI MING·Filed 2012·Granted Jan 6, 2015·0 cites·3 claims
- 4648US9245971B2Semiconductor device having high mobility channelQUALCOMM INC·Filed 2013·Granted Jan 26, 2016·0 cites·45 claims
- 4747US11683269B2Data flow processing method, electronic device, and storage mediumNANNING FULIAN FUGUI PREC INDUSTRIAL CO LTD·Filed 2022·Granted Jun 20, 2023·0 cites·16 claims
- 4847US10348013B2Card tray, method for preparing card tray, and mobile terminalHUAWEI TECH CO LTD·Filed 2018·Granted Jul 9, 2019·0 cites·20 claims
- 4946US2016013306A1Method and apparatus for 3d concurrent multiple parallel 2d quantum wellsQUALCOMM INC·Filed 2015·Application pending·0 cites
- 5045US2013105896A1Threshold Voltage Adjustment For Thin Body MosfetsBRODSKY MARYJANE·Filed 2012·Application pending·0 cites
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →